Abstract: A method of manufacturing a hybrid integrated circuit device of the present invention includes the steps of preparing a lead frame which constituted by units each having a plurality of leads, and fixing a circuit substrate on each unit of the lead frame by fixing pads which are formed on the surface of the circuit substrate to the leads, where a space between a first pad which is formed at an end edge of the circuit substrate and a second pad which is adjacent to the first pad is set narrower than a space between the pads themselves.

Abstract: An inverter circuit overcurrent protection device in which an overcurrent detection resistor (Rs) is incorporated in a hybrid integrated circuit, in which a detection voltage from the overcurrent detection resistor (Rs) is divided by voltage dividing resistors (R1 and R2) and is compared with a reference voltage in an overcurrent detection circuit, for carrying out an overcurrent protection, and an external resistor is connected in series or in parallel with one of the voltage dividing resistors (R1 and R2) to change a division ratio so that the level of overcurrent protection can be adjusted; and an embodiment wherein, in the vicinity of a current detection terminal, a first pad (P1) is connected to a detection voltage from the overcurrent detection resistance, a second pad (P2) is connected to a detection voltage from the amplifier, and a third pad (P3) is connected to the voltage dividing resistors, and a bonding wire (10) is connected between the current detection terminal one of said pads, to select one

Abstract: A method of manufacturing a hybrid integrated circuit device of the present invention includes the steps of preparing a lead frame which constituted by units each having a plurality of leads, and fixing a circuit substrate on each unit of the lead frame by fixing pads which are formed on the surface of the circuit substrate to the leads, where a space between a first pad which is formed at an end edge of the circuit substrate and a second pad which is adjacent to the first pad is set narrower than a space between the pads themselves.

Abstract: An inverter circuit overcurrent protection device in which an overcurrent detection resistor (Rs) is incorporated in a hybrid integrated circuit, in which a detection voltage from the overcurrent detection resistor (Rs) is divided by voltage dividing resistors (R1 and R2) and is compared with a reference voltage in an overcurrent detection circuit, for carrying out an overcurrent protection, and an external resistor is connected in series or in parallel with one of the voltage dividing resistors (R1 and R2) to change a division ratio so that the level of overcurrent protection can be adjusted; and an embodiment wherein, in the vicinity of a current detection terminal, a first pad (P1) is connected to a detection voltage from the overcurrent detection resistance, a second pad (P2) is connected to a detection voltage from the amplifier, and a third pad (P3) is connected to the voltage dividing resistors, and a bonding wire (10) is connected between the current detection terminal one of said pads, to select one

Abstract: An inverter circuit overcurrent protection device in which an overcurrent detection resistor (Rs) is incorporated in a hybrid integrated circuit, in which a detection voltage from the overcurrent detection resistor (Rs) is divided by voltage dividing resistors (R1 and R2) and is compared with a reference voltage in an overcurrent detection circuit, for carrying out an overcurrent protection, and an external resistor is connected in series or in parallel with one of the voltage dividing resistors (R1 and R2) to change a division ratio so that the level of overcurrent protection can be adjusted; and an embodiment wherein, in the vicinity of a current detection terminal, a first pad (P1) is connected to a detection voltage from the overcurrent detection resistance, a second pad (P2) is connected to a detection voltage from the amplifier, and a third pad (P3) is connected to the voltage dividing resistors, and a bonding wire (10) is connected between the current detection terminal one of said pads, to select one

Abstract: In order to enable overheat protection and overcurrent protection as well as temperature detection of an inverter circuit, an inverter circuit comprises a switching circuit 9 composed of a plurality of switching elements and a control circuit 1 for generating a control signal to be inputted into a drive circuit 2 to control a load, a temperature detecting element 12 for detecting a change in temperature of the inverter circuit is provided in a temperature detection circuit 10, and a temperature detection signal which changes according to a change in temperature of said inverter circuit, an overheat abnormal signal outputted upon a rise in temperature to a predetermined temperature or more, and an overcurrent abnormal signal outputted from an overcurrent protection FET 13 are outputted via one commonly used terminal.

Abstract: In a molding process, a hybrid integrated circuit substrate is fixed the position of the substrate in a thickness direction. A leadframe is connected, with an upward inclination, to a hybrid integrated circuit substrate and transported into a mold cavity. By horizontally fixing the leadframe by mold dies, the hybrid integrated circuit substrate inclined upward is urged downward by a pushpin. This can fix the position of the hybrid integrated circuit substrate within the mold cavity and integrally transfer-molded.

Abstract: In a molding process, a hybrid integrated circuit substrate is fixed the position of the substrate in a thickness direction. A leadframe is connected, with an upward inclination, to a hybrid integrated circuit substrate and transported into a mold cavity. By horizontally fixing the leadframe by mold dies, the hybrid integrated circuit substrate inclined upward is urged downward by a pushpin. This can fix the position of the hybrid integrated circuit substrate within the mold cavity and integrally transfer-molded.

Abstract: In a manufacturing method of a hybrid integrated circuit device of the invention, transfer molding is carried put by positioning a curved surface formed in a back surface of the substrate on a lower mold die side and a burr formed in a main surface of the substrate on an upper mold die side. This utilizes the curved surface to inject thermosetting resin in an arrow direction to pour the thermosetting resin through a below of the substrate. There are no broken fragments of burr in a thermosetting resin at the below of the substrate. As a result, a required minimum resin thickness is secured at the below of the substrate, thus realizing a hybrid integrated circuit device having a high voltage resistance, an excellent heat dissipation property and a high product quality.

Abstract: A method of manufacturing a hybrid integrated circuit device of the present invention includes the steps of preparing a lead frame which constituted by units each having a plurality of leads, and fixing a circuit substrate on each unit of the lead frame by fixing pads which are formed on the surface of the circuit substrate to the leads, where a space between a first pad which is formed at an end edge of the circuit substrate and a second pad which is adjacent to the first pad is set narrower than a space between the pads themselves.

Abstract: In order to enable overheat protection and overcurrent protection as well as temperature detection of an inverter circuit, an inverter circuit comprises a switching circuit 9 composed of a plurality of switching elements and a control circuit 1 for generating a control signal to be inputted into a drive circuit 2 to control a load, a temperature detecting element 12 for detecting a change in temperature of the inverter circuit is provided in a temperature detection circuit 10, and a temperature detection signal which changes according to a change in temperature of said inverter circuit, an overheat abnormal signal outputted upon a rise in temperature to a predetermined temperature or more, and an overcurrent abnormal signal outputted from an overcurrent protection FET 13 are outputted via one commonly used terminal.

Abstract: An inverter circuit overcurrent protection device in which an overcurrent detection resistor (Rs) is incorporated in a hybrid integrated circuit, in which a detection voltage from the overcurrent detection resistor (Rs) is divided by voltage dividing resistors (R1 and R2) and is compared with a reference voltage in an overcurrent detection circuit, for carrying out an overcurrent protection, and an external resistor is connected in series or in parallel with one of the voltage dividing resistors (R1 and R2) to change a division ratio so that the level of overcurrent protection can be adjusted; and an embodiment wherein, in the vicinity of a current detection terminal, a first pad (P1) is connected to a detection voltage from the overcurrent detection resistance, a second pad (P2) is connected to a detection voltage from the amplifier, and a third pad (P3) is connected to the voltage dividing resistors, and a bonding wire (10) is connected between the current detection terminal one of said pads, to select one

Abstract: In a molding process, a hybrid integrated circuit substrate is positionally fixed in a horizontal direction. By abutting the points, where particularly leads having a spacing kept constant continue with a first connection portion, against guide pins provided on a mold die, a hybrid integrated circuit substrate can be positionally fixed. Because the spacing between the particular leads is not relied upon the number of terminals of the hybrid integrated circuit substrate, the mold can be commonly used where the number of terminals is different.

Abstract: In a molding process, a hybrid integrated circuit substrate is fixed the position of the substrate in a thickness direction. A leadframe is connected, with an upward inclination, to a hybrid integrated circuit substrate and transported into a mold cavity. By horizontally fixing the leadframe by mold dies, the hybrid integrated circuit substrate inclined upward is urged downward by a pushpin. This can fix the position of the hybrid integrated circuit substrate within the mold cavity and integrally transfer-molded.

Abstract: In a molding process, a hybrid integrated circuit substrate is positionally fixed in a horizontal direction. By abutting the points, where particularly leads having a spacing kept constant continue with a first connection portion, against guide pins provided on a mold die, a hybrid integrated circuit substrate can be positionally fixed. Because the spacing between the particular leads is not relied upon the number of terminals of the hybrid integrated circuit substrate, the mold can be commonly used where the number of terminals is different.

Abstract: In a manufacturing method of a hybrid integrated circuit device of the invention, transfer molding is carried put by positioning a curved surface formed in a back surface of the substrate on a lower mold die side and a burr formed in a main surface of the substrate on an upper mold die side. This utilizes the curved surface to inject thermosetting resin in an arrow direction to pour the thermosetting resin through a below of the substrate. There are no broken fragments of burr in a thermosetting resin at the below of the substrate. As a result, a required minimum resin thickness is secured at the below of the substrate, thus realizing a hybrid integrated circuit device having a high voltage resistance, an excellent heat dissipation property and a high product quality.

Abstract: Opposed faces of two disk substrates are bonded by an adhesive layer whose characteristic parameters are set in predetermined ranges, particularly in the values of a product of Young's modulus and the film thickness in a range of 1.0.times.10.sup.-2 kg/mm to 3.0 kg/mm, a product of Young's module and the thermal expansion coefficient in a range not larger than 1.5.times.10.sup.-2 kg.multidot.mm.sup.-2 .multidot..degree. C..sup.-1, or a product of the thermal expansion coefficient and the film thickness in a range not larger than 2.0.times.10.sup.-5 mm /.degree. C. Preferably, the glass transition point of the used adhesive is set to a value in a range of 20.degree. C. to 80.degree. C., and the film thickness is set to a value in a range of 10 .mu.m to 100 .mu.m.