Abstract: A manufacturing method for wafers includes: radiating a laser beam to a planned cutoff surface where the ingot is to be cutoff; and forming, with the radiation of the laser beam, a plurality of reformed sections at the planned cutoff surface to extend a crack from the reformed section, thereby slicing wafers, wherein an energy density of the laser beam exceeds a reforming threshold. The energy density satisfies at least one of conditions of a peak value of the energy density is lower than or equal to 44 J/cm2, a rising rate of the energy density at a portion corresponding to the most shallow position where the energy density reaches the reforming threshold Eth is larger than or equal to 1000 J/cm3, and a range of depth where the energy density exceeds the reforming threshold is smaller than or equal to 30 ?m.

Abstract: A method of manufacturing a diamond substrate includes: a step of placing a laser condensing unit 190 configured to condense laser light B so as to face an upper surface 10a of a block 10 of single crystal diamond; and a step of forming a modified layer 20, which includes a processing mark 21b of graphite and a crack 22b extending along a surface (111) around the processing mark 21b, along the surface (111) of the single crystal diamond at a predetermined depth from an upper surface of the block by radiating the laser light B on the upper surface 10a of the block 10 from the laser condensing unit 190 under predetermined conditions and condensing the laser light B inside the block 10, and moving the laser condensing unit 190 and the block 10 in a relative manner two-dimensionally.

Abstract: A method of manufacturing a diamond substrate includes: a step of placing a laser condensing unit 190 configured to condense laser light B so as to face an upper surface 10a of a block 10 of single crystal diamond, a step of forming a modified layer 20, which includes a processing mark 21 of graphite and a crack 22b extending along a surface (111) around the processing mark 21, in a partial region of the upper surface 10a of the block 10 along the surface (111) of the single crystal diamond, along the surface (111) of the single crystal diamond at a predetermined depth from the upper surface 10a of the block 10 by radiating the laser light B on the upper surface 10a of the block 10 from the laser condensing unit 190 under predetermined conditions and condensing the laser light B inside the block 10, and moving the laser condensing unit 190 and the block 10 in a relative manner two-dimensionally, and a step of forming a cleavage plane 25 at the predetermined depth of the remaining region of the upper surface 1

Abstract: A method for manufacturing a peeled substrate has a laser condensing step for focusing laser light at a prescribed depth from the surface of a substrate and a positioning step for moving and positioning a laser condenser relative to the substrate, the method involving forming a processed layer in the substrate. The laser condensing step includes a laser light adjustment step in which a diffraction optical element is used to branch the laser light into a plurality of branched laser beams, and at least one of the branched laser beams is branched such that the intensity thereof differs from the other branched laser beams. The processed layer is elongated using the branched laser beam having a relatively high intensity among the plurality of branched laser beams to process the substrate, and the elongation of the processed layer is restrained using the branched laser beams having a relatively low intensity.

Abstract: An etching method for etching a substrate using a molten alkali, wherein, while an oxide coating is formed on the surface of the substrate PL to be etched in a high-temperature oxygen-containing environment, the surface to be etched is isotropically etched to remove the oxide coating using a molten alkali AL brought into a prescribed high-temperature range.

Abstract: A substrate manufacturing method capable of easily obtaining a thin magnesium oxide single crystal substrate is provided. A first step is performed which disposes a condenser for condensing a laser beam on an irradiated surface of a magnesium oxide single crystal member in a non-contact manner. A second step is performed which forms processing mark lines in parallel by irradiating the laser beam to the surface of the single crystal substrate under designated irradiation conditions to condense the laser beam into an inner portion of the single crystal substrate while moving the condenser and the single crystal substrate relative to each other in a two-dimensional manner.

Abstract: An etching method in which: molten sodium hydroxide in a prescribed temperature range is used as a molten alkali, whereby an Si surface of an etching surface of an SiC substrate, in which the substrate surface is configured from the Si surface and a C surface, is removed at a higher speed than is the C surface while an oxide film is formed on the etching surface in a high-temperature environment containing oxygen.

Abstract: An etching method for etching a substrate using a molten alkali, wherein, while an oxide coating is formed on the surface of the substrate PL to be etched in a high-temperature oxygen-containing environment, the surface to be etched is isotropically etched to remove the oxide coating using a molten alkali AL brought into a prescribed high-temperature range.

Abstract: A substrate manufacturing method includes: a first step of disposing a condenser for condensing a laser beam in a non-contact manner on a surface 20r of a magnesium oxide single crystal substrate 20 to be irradiated; and a second step of irradiating a laser beam to a surface of the magnesium oxide single crystal substrate 20 and condensing the laser beam into an inner portion of the single crystal member under designated irradiation conditions using the condenser, and at a same time, two-dimensionally moving the condenser and the magnesium oxide single crystal substrate 20 relatively to each other, and sequentially forming processing marks to sequentially allow planar peeling.

Abstract: A method for manufacturing a peeled substrate has a laser condensing step for focusing laser light at a prescribed depth from the surface of a substrate and a positioning step for moving and positioning a laser condenser relative to the substrate, the method involving forming a processed layer in the substrate. The laser condensing step includes a laser light adjustment step in which a diffraction optical element is used to branch the laser light into a plurality of branched laser beams, and at least one of the branched laser beams is branched such that the intensity thereof differs from the other branched laser beams. The processed layer is elongated using the branched laser beam having a relatively high intensity among the plurality of branched laser beams to process the substrate, and the elongation of the processed layer is restrained using the branched laser beams having a relatively low intensity.

Abstract: An etching method in which: molten sodium hydroxide in a prescribed temperature range is used as a molten alkali, whereby an Si surface of an etching surface of an SiC substrate, in which the substrate surface is configured from the Si surface and a C surface, is removed at a higher speed than is the C surface while an oxide film is formed on the etching surface in a high-temperature environment containing oxygen.

Abstract: A substrate manufacturing method capable of easily obtaining a thin magnesium oxide single crystal substrate is provided. A first step is performed which disposes a condenser for condensing a laser beam on an irradiated surface of a magnesium oxide single crystal member in a non-contact manner. A second step is performed which forms processing mark lines in parallel by irradiating the laser beam to the surface of the single crystal substrate under designated irradiation conditions to condense the laser beam into an inner portion of the single crystal substrate while moving the condenser and the single crystal substrate relative to each other in a two-dimensional manner.

Abstract: A substrate manufacturing method capable of easily obtaining a thin magnesium oxide single crystal substrate is provided. Performed is a first step of disposing a laser condensing means on a surface of a magnesium oxide single crystal substrate (20) of magnesium oxide to be irradiated in a non-contact manner, the laser condensing means being for condensing a laser beam. Then, a second step of causing planar peeling from a surface side of the magnesium oxide single crystal substrate (20) to be irradiated is performed. In this second step, a laser beam (B) is irradiated to the surface of the single crystal substrate (20) and the laser beam (B) is condensed into an inner portion of the single crystal substrate (20) under designated irradiation conditions. Simultaneously with the irradiation and the condensation, the laser condensing means (14) and the single crystal substrate (20) are two-dimensionally moved relatively to each other.

Abstract: A substrate manufacturing method includes: a first step of disposing a condenser for condensing a laser beam in a non-contact manner on a surface 20r of a magnesium oxide single crystal substrate 20 to be irradiated; and a second step of irradiating a laser beam to a surface of the magnesium oxide single crystal substrate 20 and condensing the laser beam into an inner portion of the single crystal member under designated irradiation conditions using the condenser, and at a same time, two-dimensionally moving the condenser and the magnesium oxide single crystal substrate 20 relatively to each other, and sequentially forming processing marks to sequentially allow planar peeling.

Abstract: Provided are a thermoplastic resin shaped-article in which vacancies with satisfactory light emission efficiency are formed, and a thermoplastic resin light guide that uses the thermoplastic resin shaped-article. Pulse laser irradiation is performed in a state in which the pulse laser is focused to an inner region of a primary thermoplastic resin shaped-article, thereby forming cracks at the inner side of the primary thermoplastic resin shaped-article. Then, a heat treatment is performed at a temperature equal to or higher than a glass transition temperature of a thermoplastic resin that constitutes the primary thermoplastic resin shaped-article, thereby obtaining a thermoplastic resin shaped-article 20 in which substantially spherical vacancies 244 having minimum diameter of 30 ?m or more are formed only at the inner region distant from a surface thereof by 10 ?m or more.

Abstract: Provided are a thermoplastic resin shaped-article in which vacancies with satisfactory light emission efficiency are formed, and a thermoplastic resin light guide that uses the thermoplastic resin shaped-article. Pulse laser irradiation is performed in a state in which the pulse laser is focused to an inner region of a primary thermoplastic resin shaped-article, thereby forming cracks at the inner side of the primary thermoplastic resin shaped-article. Then, a heat treatment is performed at a temperature equal to or higher than a glass transition temperature of a thermoplastic resin that constitutes the primary thermoplastic resin shaped-article, thereby obtaining a thermoplastic resin shaped-article 20 in which substantially spherical vacancies 244 having minimum diameter of 30 ?m or more are formed only at the inner region distant from a surface thereof by 10 ?m or more.

Abstract: An input device includes an input member in which a pair of conductive substrates including an insulating substrate and a transparent conductive film that is provided on the insulating substrate and has a mesh-shaped member made of a conductive metal in an insulating transparent body are provided so as to be laminated in a thickness direction, and a detection means for being electrically connected to the transparent conductive film, and detecting an input signal. Here, a conductive portion in which the mesh-shaped member is arranged in the transparent substrate and an insulating portion in which at least one part of the mesh-shaped member in the transparent substrate is removed are provided on the transparent conductive film.

Abstract: It is an object of the present invention to provide a manufacturing method of a single crystal substrate and to provide an internal modified layer-forming single crystal member, each of which is capable of easily manufacturing a relatively large and thin single crystal substrate.

Abstract: A transparent conductive film (12, 22) including a transparent base material (2) having insulation properties; and a mesh member made of a conductive metal and provided in the transparent base material (2), wherein the transparent base material (2) is provided with a conductive portion in which the mesh member is arranged, and an insulating portion (I) in which a gap (5) formed by removing the mesh member is arranged.

Abstract: A transparent conductive film (12, 22) including a transparent base material (2) having insulation properties; and a mesh member made of a conductive metal and provided in the transparent base material (2), wherein the transparent base material (2) is provided with a conductive portion in which the mesh member is arranged, and an insulating portion (I) in which a gap (5) formed by removing the mesh member is arranged.