Abstract: A metal nano particle can be supported and immobilized on a substrate uniformly. Thus, disclosed is a method for supporting a nano metal particle, which comprises applying a silane coupling agent having at least one functional group capable of capturing a metal (e.g., an imidazole group, an amino group, a diamino group, a mercapto group, and a vinyl group) in its molecule on a substrate, and then contacting the silane coupling agent with a nano particle of a metal (e.g., gold, platinum, silver, copper, palladium, nickel, cobalt), wherein the silane coupling agent may be produced by the reaction between an azole compound with an epoxysilane compound, and wherein the metal nano particle to be contacted with the silane coupling agent is preferably coated with an ionic fluid. Also disclosed is a substrate having a metal nano particle supported thereon, which is produced by the method.

Abstract: A cooling system for electronic equipment includes an evaporator cooling the electronic equipment, a blower making air heated by the electronic equipment flow into the evaporator, and a condenser condensing a refrigerant to be supplied to the evaporator and also includes a refrigerant liquid pipe guiding a liquefied refrigerant from the condenser to a lower part of the evaporator, a refrigerant gas pipe guiding the refrigerant which evaporates by cooling the electronic equipment from an upper part of the evaporator to the condenser, a refrigerant flow rate control valve controlling a flow rate of the refrigerant flowing into the evaporator, a temperature sensor detecting a temperature of air obtained after passing through the evaporator, and a controller for control valve controlling the control valve on the basis of a detection value of the temperature sensor.

Abstract: The invention provides a colored curable composition including a dipyrromethene compound having a structure in which a polymerizable group and a carboxyl group are introduced in the same molecule, a resist liquid, an ink for inkjet printing, a color filter, a method of producing a color filter, a solid-state image sensor, a liquid crystal display, an organic EL display, an image display device and a colorant compound.

Abstract: A plated product made of a substrate having formed thereon an alloy barrier thin film for preventing copper diffusion contains metal B, which has barrier properties in relation to copper and enables displacement plating with the copper ions contained in an electroless copper plating solution, and metal A, which tends to have less ionization than metal B in an electroless copper plating solution at a pH of 10 or higher; the alloy barrier thin film for preventing copper diffusion has a composition wherein metal A constitutes between 15 and 35 at % of the atoms; and a copper thin film is formed on the alloy barrier thin film by electroless plating using an electroless copper plating solution at a pH of 10 or higher.

Abstract: According to one embodiment, a method of manufacturing a magnetic memory, the method includes forming a first magnetic layer having a variable magnetization, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, the second magnetic layer having an invariable magnetization, forming a hard mask layer as a mask on the second magnetic layer, patterning the second magnetic layer by using the mask of the hard mask layer, and executing a GCIB-irradiation by using the mask of the hard mask layer, after the patterning.

Abstract: According to one embodiment, a method of manufacturing a multilayer film, the method includes forming a first layer, forming a second layer on the first layer, and transcribing a crystal information of one of the first and second layers to the other one of the first and second layers by executing a GCIB-irradiation to the second layer.

Abstract: According to one embodiment, a magnetic element includes first and second conductive layers, an intermediate interconnection, and first and second stacked units. The intermediate interconnection is provided between the conductive layers. The first stacked unit is provided between the first conductive layer and the interconnection, and includes first and second ferromagnetic layer and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second stacked unit is provided between the second conductive layer and the interconnection, and includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a magnetic field to act on the second ferromagnetic layer.

Abstract: A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.

Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45?x<64 atomic %); a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the second magnetic film including MnyGa100-y (45?y<64 atomic %). The first and second magnetic layers include different Mn composition rates from each other, a magnetization direction of the first magnetic layer is changeable by a current flowing between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer.

Abstract: According to one embodiment, a magnetic recording element includes a stacked body. The stacked body includes a first and a second stacked unit. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit is stacked with the first stacked unit and includes third and fourth ferromagnetic layers and a second nonmagnetic layer. The fourth ferromagnetic layer is stacked with the third ferromagnetic layer. The second nonmagnetic layer is provided between the third and fourth ferromagnetic layers. An outer edge of the fourth ferromagnetic layer includes a portion outside an outer edge of the first stacked unit in a plane. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a rotating magnetic field to act on the second ferromagnetic layer.

Abstract: A substrate having, on a base material, a barrier film for preventing copper diffusion containing one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as ruthenium, rhodium, and iridium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.

Abstract: According to one embodiment, a nano-imprint mold includes plural pairs of first and second protrusions formed on a base layer, each of which is formed along the same straight line. Each protrusion has a top surface and four side surfaces. The first and second protrusions are mirror-symmetrical with each other. A first side surface of the first protrusion and a second side surface of the second protrusion face each other. A first angle between the first side surface or the second side surface and a main surface of the base layer is not less than 85° and not more than 90°. A second angle between a third side surface in the first protrusion or a fourth side surface in the second protrusion and the main surface of the base layer is not less than 70° and not more than 88°. The first angle is larger than the second angle.

Abstract: It is an object of the present invention to provide an electroless plating pretreatment agent that can retain stably Pd(II) over a long period of time in an organic solvent, an electroless plating method using the same that is capable of forming an electroless plated film having excellent adhesion, and an electroless plated object. The object is achieved by an electroless plating pretreatment agent comprising an organic palladium compound and a coordination compound having a functional group with a metal-capturing capability dissolved in an organic solvent, the coordination compound being selected from the group consisting of the imidazole analogs, polyethyleneamines, ethyleneimines and polyethyleneimines.

Abstract: A colorant multimer includes, as a partial structure of a colorant moiety, a dipyrromethene metal complex compound or tautomer thereof obtained from: (i) a dipyrromethene compound represented by the following Formula (M); and (ii) a metal or a metal compound: wherein in Formula (M), R4, R5, R6, R7, R8, R9, and R10 each independently represent a hydrogen atom or a monovalent substituent.

Abstract: A magneto-resistance effect element includes: a first magnetic layer of which a first magnetization is fixed in one direction; a second magnetic layer of which a second magnetization is fixed in one direction; a spacer layer located between the first magnetic layer and the second magnetic layer and made of at least one selected from the group consisting of an oxide, a nitride, an oxynitride and a metal; and a current bias generating portion, which is located adjacent to the spacer layer, for applying a bias magnetic field to the spacer layer.

Abstract: A camera according to this invention comprises a photographing optical system which forms an optical image of an object, a photoelectric conversion element which converts the optical image into an electric signal, an optical element arranged between the photographing optical system and the photoelectric conversion element, and vibration means which vibrates the optical element first at one of at least two frequencies and then at the other frequency, the frequencies being close to resonance frequencies.

Abstract: A method of forming a concave-convex pattern according to an embodiment includes: forming a guide pattern on a base material, the guide pattern having a convex portion; forming a formative layer on the guide pattern, the formative layer including a stacked structure formed by stacking a first layer and a second layer, the first layer including at least one element selected from a first metal element and a metalloid element, the second layer including a second metal element different from the first metal element; selectively leaving the formative layer only at side faces of the convex portions by performing etching on the formative layer; removing the guide pattern; and forming the concave-convex pattern in the base material by performing etching on the base material, with the remaining formative layer being used as a mask.

Abstract: Disclosed is a method of producing a semiconductor device, able to form a source/drain of a Schottky junction (FET) with simple steps and able to improve the device characteristics. A gate is formed on an element region defined in a silicon substrate layer by element isolation regions (first step), the silicon substrate is etched by self-alignment using the gate and the element isolation regions as masks (second step), and an insulating film is formed on the side surfaces of the gate (third step). Then, a metal film acting as the source/drain is selectively formed on the etching region of the silicon substrate by electroless plating (fourth step).

Abstract: The present invention provides a plated article that has a thin seed layer having a uniform thickness, formed by electroless plating and allowing formation of ultrafine wiring, and that avoids the complicated formation of a bilayer of a barrier layer and a catalytic metal layer prior to forming the seed layer. The present invention also provides a method for manufacturing the plated article. The plated article has an alloy thin film formed on a substrate and containing a catalytically active metal (A) for electroless plating and a metal (B) capable of undergoing displacement plating with a metal ion contained in an electroless plating solution, and a metal thin film formed on the alloy thin film by electroless displacement and reduction plating. The alloy thin film of the catalytically active metal (A) and the metal (B) capable of displacement plating has a composition comprising 5at% to 40at% of the metal (A).

Abstract: A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region.