Patents by Inventor Junichi Kageyama
Junichi Kageyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9927693Abstract: A reflective mask blank, which includes a substrate, a reflective multilayer film for reflecting exposure light, and an absorber layer for absorbing the exposure light in this order; the reflective multilayer film having at least three fiducial marks formed in a concave shape in an area outside an exposure area for patterning the reflective multilayer film on a front side thereof, each of the fiducial marks including a concave portion having an inclination angle ?, the absorber layer having a film thickness of from 40 to 90 nm; the absorber layer having transferred marks formed in a concave shape on a front side thereof, the transferred marks being transferred from the at least three fiducial marks, each of the transferred marks including a concave portion having an inclination angle of from 35 to 80°; and a difference between the inclination angle ? and the inclination angle ? (inclination angle ??inclination angle ?) being at least 10°.Type: GrantFiled: September 15, 2016Date of Patent: March 27, 2018Assignee: Asahi Glass Company, LimitedInventors: Hiroshi Hanekawa, Junichi Kageyama, Kazuyuki Hayashi
-
Patent number: 9739722Abstract: A process for inspecting an EUV mask blank capable of distinguishing phase defects and amplitude defects and capable of detecting small amplitude defects, a process for producing an EUV mask blank using the inspection process, and an EUV mask blank obtainable by such a process. A process for inspecting a reflective mask blank for EUV lithography having a multilayer reflective film and an absorber layer. The process includes a first step of detecting in-plane defects in the multilayer reflective film by applying EUV light to the surface of the multilayer reflective film, a second step of detecting in-plane defects from the absorber layer by applying light having a wavelength of from 150 to 600 nm to the surface of the absorber layer, and a step of distinguishing phase defects and amplitude defects in the reflective mask blank by comparison between the first and second in-plane defect data.Type: GrantFiled: October 8, 2015Date of Patent: August 22, 2017Assignee: Asahi Glass Company, LimitedInventors: Hiroshi Nakanishi, Junichi Kageyama, Yoshiaki Ikuta
-
Patent number: 9618836Abstract: A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, comprising a substrate and a conductive film formed on the substrate, wherein the conductive film has at least two layers of a lower layer formed on the substrate side and an upper layer formed on the lower layer; the lower layer is a CrN type film which contains Cr and N; the upper layer is a CrON type film which contains Cr, N and O; in the CrN type film, the total content of Cr and N is at least 85 at %, and the compositional atomic ratio of Cr to N is Cr:N=9.5:0.5 to 3:7; in the CrON type film, the total content of Cr, N and O is at least 85 at %, and the compositional atomic ratio of Cr to (N+O) is Cr:(N+O)=9.5:0.5 to 3:7; and the film thickness of the CrON type film is from 0.5 to 3 nm, and the standard deviation of the film thickness distribution of the CrON type film is at most 0.18 nm.Type: GrantFiled: April 3, 2015Date of Patent: April 11, 2017Assignee: Asahi Glass Company, LimitedInventors: Junichi Kageyama, Kazuyuki Hayashi
-
Publication number: 20170082916Abstract: A reflective mask blank, which includes a substrate, a reflective multilayer film for reflecting exposure light, and an absorber layer for absorbing the exposure light in this order; the reflective multilayer film having at least three fiducial marks formed in a concave shape in an area outside an exposure area for patterning the reflective multilayer film on a front side thereof, each of the fiducial marks including a concave portion having an inclination angle a, the absorber layer having a film thickness of from 40 to 90 nm; the absorber layer having transferred marks formed in a concave shape on a front side thereof, the transferred marks being transferred from the at least three fiducial marks, each of the transferred marks including a concave portion having an inclination angle of from 35 to 80°; and a difference between the inclination angle ? and the inclination angle ? (inclination angle ??inclination angle ?) being at least 10°.Type: ApplicationFiled: September 15, 2016Publication date: March 23, 2017Applicant: Asahi Glass Company, LimitedInventors: Hiroshi HANEKAWA, Junichi KAGEYAMA, Kazuyuki HAYASHI
-
Publication number: 20160109384Abstract: To provide a process for inspecting an EUV mask blank capable of distinguishing phase defects and amplitude defects and capable of detecting even amplitude defects of small sizes, a process for producing an EUV mask blank using the inspection process, and an EUV mask blank obtainable by such a process.Type: ApplicationFiled: October 8, 2015Publication date: April 21, 2016Applicant: Asahi Glass Company, LimitedInventors: Hiroshi NAKANISHI, Junichi Kageyama, Yoshiaki Ikuta
-
Publication number: 20150301442Abstract: A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, comprising a substrate and a conductive film formed on the substrate, wherein the conductive film has at least two layers of a lower layer formed on the substrate side and an upper layer formed on the lower layer; the lower layer is a CrN type film which contains Cr and N; the upper layer is a CrON type film which contains Cr, N and O; in the CrN type film, the total content of Cr and N is at least 85 at %, and the compositional atomic ratio of Cr to N is Cr:N=9.5:0.5 to 3:7; in the CrON type film, the total content of Cr, N and O is at least 85 at %, and the compositional atomic ratio of Cr to (N+O) is Cr:(N+O)=9.5:0.5 to 3:7; and the film thickness of the CrON type film is from 0.5 to 3 nm, and the standard deviation of the film thickness distribution of the CrON type film is at most 0.18 nm.Type: ApplicationFiled: April 3, 2015Publication date: October 22, 2015Applicant: Asahi Glass Company, LimitedInventors: Junichi KAGEYAMA, Kazuyuki HAYASHI
-
Publication number: 20140242501Abstract: A deposition chamber shield having a stainless steel coating of from about 100 microns to about 250 microns thick wherein the coated shield has a surface roughness of between about 300 microinches and about 800 microinches and a surface particle density of less than about 0.1 particles/mm2 of particles between about 1 micron and about 5 microns in size and no particles below about 1 micron in size, and process for production thereof is disclosed.Type: ApplicationFiled: May 8, 2014Publication date: August 28, 2014Applicants: SEMATECH, INC., ASAHI GLASS CO., LTD.Inventors: Vibhu Jindal, Junichi Kageyama
-
Publication number: 20140242500Abstract: A process for cleaning and restoring deposition shield surfaces which results in a cleaned shield having a surface roughness of between about 200 microinches and about 500 microinches and a particle surface density of less than about 0.1 particles/mm2 of particles between about 1 micron and about 5 microns in size and no particles less than about 1 micron in size and method for use thereof is disclosed.Type: ApplicationFiled: May 8, 2014Publication date: August 28, 2014Applicants: SEMATECH, INC., ASAHI GLASS CO., LTD.Inventors: Vibhu Jindal, Junichi Kageyama
-
Patent number: 8734586Abstract: A process for cleaning and restoring deposition shield surfaces which results in a cleaned shield having a surface roughness of between about 200 microinches and about 500 microinches and a particle surface density of less than about 0.1 particles/mm2 of particles between about 1 micron and about 5 microns in size and no particles less than about 1 micron in size and method for use thereof is disclosed.Type: GrantFiled: February 2, 2012Date of Patent: May 27, 2014Assignees: Sematech, Inc., Asahi Glass Co., Ltd.Inventors: Vibhu Jindal, Junichi Kageyama
-
Patent number: 8734907Abstract: A deposition chamber shield having a stainless steel coating of from about 100 microns to about 250 microns thick wherein the coated shield has a surface roughness of between about 300 microinches and about 800 microinches and a surface particle density of less than about 0.1 particles/mm2 of particles between about 1 micron and about 5 microns in size and no particles below about 1 micron in size, and process for production thereof is disclosed.Type: GrantFiled: February 2, 2012Date of Patent: May 27, 2014Assignees: Sematech, Inc., Asahi Glass Co., Ltd.Inventors: Vibhu Jindal, Junichi Kageyama
-
Patent number: 8562794Abstract: To provide a process for producing an EUV mask blank, capable of reducing foreign matter attributable to a sputtering target, and a process for producing a substrate with a functional film for such a mask blank.Type: GrantFiled: December 14, 2010Date of Patent: October 22, 2013Assignee: Asahi Glass Company, LimitedInventor: Junichi Kageyama
-
Publication number: 20130202991Abstract: A process for cleaning and restoring deposition shield surfaces which results in a cleaned shield having a surface roughness of between about 200 microinches and about 500 microinches and a particle surface density of less than about 0.1 particles/mm2 of particles between about 1 micron and about 5 microns in size and no particles less than about 1 micron in size and method for use thereof is disclosed.Type: ApplicationFiled: February 2, 2012Publication date: August 8, 2013Inventors: Vibhu Jindal, Junichi Kageyama
-
Publication number: 20130202990Abstract: A deposition chamber shield having a stainless steel coating of from about 100 microns to about 250 microns thick wherein the coated shield has a surface roughness of between about 300 microinches and about 800 microinches and a surface particle density of less than about 0.1 particles/mm2 of particles between about 1 micron and about 5 microns in size and no particles below about 1 micron in size, and process for production thereof is disclosed.Type: ApplicationFiled: February 2, 2012Publication date: August 8, 2013Inventors: Vibhu Jindal, Junichi Kageyama
-
Publication number: 20120145534Abstract: To provide a process for producing an EUV mask blank, capable of reducing foreign matter attributable to a sputtering target, and a process for producing a substrate with a functional film for such a mask blank.Type: ApplicationFiled: December 14, 2010Publication date: June 14, 2012Applicant: Asahi Glass Company, LimitedInventor: Junichi KAGEYAMA
-
Patent number: 8192901Abstract: To provide a glass substrate-holding tool which is capable of avoiding scratching to the deposition surface of a glass substrate and dusting thereby caused as well as scratching and deposition of foreign substances at a center portion of the rear surface of the substrate and which is capable of suppressing dusting from the holding tool itself at the time of forming a multi-layered reflection film and an absorptive layer. A glass substrate-holding tool having, formed on a surface of a flat base, a catching portion for catching and holding by van der Waals forces, wherein the catching portion is in contact with only the periphery of the glass substrate.Type: GrantFiled: October 21, 2010Date of Patent: June 5, 2012Assignee: Asahi Glass Company, LimitedInventor: Junichi Kageyama
-
Publication number: 20120100464Abstract: To provide a glass substrate-holding tool which is capable of avoiding scratching to the deposition surface of a glass substrate and dusting thereby caused as well as scratching and deposition of foreign substances at a center portion of the rear surface of the substrate and which is capable of suppressing dusting from the holding tool itself at the time of forming a multi-layered reflection film and an absorptive layer. A glass substrate-holding tool having, formed on a surface of a flat base, a catching portion for catching and holding by van der Waals forces, wherein the catching portion is in contact with only the periphery of the glass substrate.Type: ApplicationFiled: October 21, 2010Publication date: April 26, 2012Applicant: Asahi Glass Company, LimitedInventor: Junichi KAGEYAMA
-
Patent number: 7026542Abstract: A transparent substrate for a cover for a solar battery and a method for producing the same are presented. Hemispherical concave portions are formed in a surface of light entering side of a cover glass almost over the entire surface wherein the ratio d/D of the depth d of the central portion of each concave portion to the radius D of the opening of the concave portion is from 0.10 to 0.50 and the proportion of area occupied by a flat portion where no concave portion is formed in the surface of light entering side is not more than 40%.Type: GrantFiled: March 22, 2004Date of Patent: April 11, 2006Assignee: Asahi Glass Company, LimitedInventors: Junichi Kageyama, Kazuo Sato, Mika Kambe
-
Publication number: 20040173256Abstract: A transparent substrate for a cover for a solar battery, which can increase the quantity of incident light entering into the solar battery module in daytime and throughout the year and/or can prevent effectively an environmental problem caused by the reflection of light at a light entering side of the module, a method for producing the transparent substrate and a solar battery module having such substrate, are presented.Type: ApplicationFiled: March 22, 2004Publication date: September 9, 2004Applicant: ASAHI GLASS COMPANY LIMITEDInventors: Junichi Kageyama, Kazuo Sato, Mika Kambe
-
Patent number: 4501634Abstract: A high-orientation multilayered film incorporates at least one cold drawn, highly oriented resin layer excellent in mechanical strength and suitable mainly for use as packaging material. Because of its specific stratal construction which is highly adaptable to afford a wide variety of specific functions, the composite film is suitable for manufacture of thermally shrinkable films which excel in transparency and in ability to shrink rapidly particularly at low temperatures. Also disclosed is a process for drawing at specific low temperatures at high expansion ratios the aforementioned multiplicity of resin layers either all by themselves or in conjunction with layers of other resins by utilizing the cold drawability of the aforementioned resin layers excelling in mechanical strength.Type: GrantFiled: November 1, 1983Date of Patent: February 26, 1985Assignee: Asahi-Dow LimitedInventors: Isao Yoshimura, Osamu Mizukami, Hideo Hata, Junichi Kageyama, Takashi Kaneko
-
Patent number: 4472228Abstract: A high-orientation multilayered film incorporates at least one cold drawn, highly oriented resin layer excellent in mechanical strength and suitable mainly for use as packaging material. Because of its specific stratal construction which is highly adaptable to afford a wide variety of specific functions, the composite film is suitable for manufacture of thermally shrinkable films which excel in transparency and in ability to shrink rapidly particularly at low temperatures. Also disclosed is a process for drawing at specific low temperatures at high expansion ratios the aforementioned multiplicity of resin layers either all by themselves or in conjunction with layers of other resins by utilizing the cold drawability of the aforementioned resin layers excelling in mechanical strength.Type: GrantFiled: December 8, 1983Date of Patent: September 18, 1984Assignee: Asahi-Dow LimitedInventors: Isao Yoshimura, Osamu Mizukami, Hideo Hata, Junichi Kageyama, Takashi Kaneko