Abstract: Provided is a semiconductor device including active regions formed in a semiconductor substrate and arranged in a first direction parallel to a surface of the semiconductor substrate; a first element isolating region formed in the semiconductor substrate and electrically isolating adjacent active regions from each other; and gate electrodes extending over the active regions respectively and arranged in the first direction. The first element isolating region includes a first region extending in a second direction orthogonal to the first direction and a second region extending in a direction intersecting the first region, one gate electrode of adjacent gate electrodes has a first edge side which includes a first overlap part placed on the second region, and another gate electrode of the adjacent gate electrodes has a second edge side which faces the first edge side and includes a second overlap part placed on the second region.

Abstract: Provided is a semiconductor device including active regions formed in a semiconductor substrate and arranged in a first direction parallel to a surface of the semiconductor substrate; a first element isolating region formed in the semiconductor substrate and electrically isolating adjacent active regions from each other; and gate electrodes extending over the active regions respectively and arranged in the first direction. The first element isolating region includes a first region extending in a second direction orthogonal to the first direction and a second region extending in a direction intersecting the first region, one gate electrode of adjacent gate electrodes has a first edge side which includes a first overlap part placed on the second region, and another gate electrode of the adjacent gate electrodes has a second edge side which faces the first edge side and includes a second overlap part placed on the second region.

Abstract: A method of producing a semiconductor device includes the steps of forming a trench in a semiconductor substrate of a first conductive type so that an active region having a first portion and a second region is formed; implanting a first impurity of the first conductive type at an implantation angle between 30 degrees and 45 degrees relative to a normal line in an implantation direction rotating relative to the normal line so that a first channel diffusion region and a channel stopper region of the first conductive type are formed; filling the trench with an insulation layer; implanting a second impurity of a second conductive type so that a second channel diffusion region of the second conductive type is formed; forming a gate insulation film on the first portion and the second portion; and forming a gate electrode on the gate insulation film.