Abstract: There are provided a plasmid characterized by having the nucleotide sequence of SEQ ID NO: 1, a plasmid characterized by having the nucleotide sequence of SEQ ID NO: 2, a plasmid characterized by having at least a part of the nucleotide sequences of SEQ ID NOs: 1 and 2 and further containing a selective marker gene, each plasmid being usable as a transformation vector for effecting gene manipulation in ammonia oxidizing bacteria, and transformants characterized in that they are obtained by transferring these plasmids into host organisms.

Abstract: An agitating member for agitating a developer includes a metal shaft, a plate member joined to the metal shaft, and a sheet member joined to the plate member, the sheet member being free to curve. A developing apparatus includes a developer bearing member bearing a developer thereon, a developer container containing the developer therein, and the above-described agitating member provided in the developer container for agitating the developer and supplying it to the developer bearing member. A process cartridge detachably attachable to the main body of an image forming apparatus, includes an electrophotographic photosensitive member and the above-described developing apparatus.

Abstract: Hardening is accomplished by heating a longitudinal section of a workpiece such as an odd-shaped bar, and by quenching while constraining the workpiece section in dies. The quenching is executed while the workpiece is pressed in a direction perpendicular to its longitudinal direction by a pressing device which is installed adjacent to the workpiece section constrained in the dies. Warping by quenching can thus be minimized in odd-shaped workpieces, such as an automobile steering rack bar.

Abstract: A charging member is disposed in contact with an electrophotographic photosensitive member and charges the surface of the electrophotographic photosensitive member electrostatically upon application of a voltage. The charging member has a conductive support, a base layer and a surface layer which are formed on the conductive support. The surface layer contains fluorine resin particles as a filler and a fluorine resin as a binder resin.

Abstract: This specification discloses an agitating member for agitating a developer comprising a metal shaft, a plate member joined to the metal shaft, and a sheet member joined to the plate member, the sheet member being free to curve. The specification also discloses a developing apparatus comprising a developer bearing member bearing a developer thereon, a developer container containing the developer therein, and the above-described agitating member provided in the developer container for agitating the developer and supplying it to the developer bearing member. The specification further discloses a process cartridge detachably attachable to the main body of an image forming apparatus, comprising an electrophotographic photosensitive member and the above-described developing apparatus.

Abstract: An image forming apparatus comprising an image bearing member and electrostatic image forming means including electrification means which is disposed in contact with the above described image bearing member at an electrification location for injection electrification of the image bearing member, and configured to set a peripheral speed different between the above described electrification means and the above described image bearing member which is smaller when an area of the image bearing member to be an image forming area is at the above described electrification location than that when at least a portion of an area of the image bearing member to be a no-image forming area is at the electrification location.

Abstract: The nonvolatile semiconductor memory device of the present invention includes: a semiconductor substrate having a surface including a first surface region at a first level, a second surface region at a second level lower than the first level, and a step side region linking the first surface region and the second surface region together; a channel region formed in the first surface region of the semiconductor substrate; a source region and a drain region which are formed in the surface of the semiconductor substrate so as to interpose the channel region therebetween; a first insulating film formed on the surface of the semiconductor substrate; a floating gate formed on the first insulating film; and a control gate which is capacitively coupled to the floating gate via a second insulating film. The first insulating film includes a first gate insulating film portion formed in the first surface region, and, a second gate insulating film portion formed in the step side region and the second surface region.

Abstract: An image forming apparatus includes a movable image bearing member; charging means including a charge member for electrically charging the image bearing member with electroconductive particles between the charge member and the image bearing member; developing means for developing a latent image with toner mixed with electroconductive particles; wherein the latent image is formed on the image bearing member having been charged by the charging means, and a toner image provided by development of the latent image by the developing means is transferred onto a recording material; wherein the electroconductive particles mixed in the toner is carried by the image bearing member and is fed to between the charge member and the image bearing member; and a width A, measured in a direction perpendicular to a moving direction of the image bearing member, in which the electroconductive particle are present between the charge member and the image bearing member, a width B in which the developing means is capable of effecting

Abstract: The present invention provides a multilayer ceramic capacitor in which electrode metal layers and dielectric ceramic layers are laminated alternately and its dielectric constant peak is present at a temperature below −50° C. The multilayer ceramic capacitor is at least one selected from a multilayer ceramic capacitor to be incorporated into an electric circuit in which an electric field of at least 200 V/mm is applied to dielectric layers as a DC bias electric field and an alternating current at a frequency of at least 20 kHz is superimposed and a multilayer ceramic capacitor to be incorporated into an electric circuit in which an electric field of at least 200 V/mm is applied to dielectric layers as an AC electric field. As the dielectric ceramic, a ceramic containing lead atoms whose amount is indicated by being measured in the form of PbO, which is at least 30 mol %, particularly a compound with a perovskite structure represented by ABO3 is used.

Abstract: In a semiconductor substrate having a surface including a first surface region at a first level, a second surface region at a second level lower than the first level, and a step side region linking the first surface region and the second surface region together, a channel region has a triple structure. Thus, a high electric field is formed in a corner portion between the step side region and the second surface region and in the vicinity thereof. A high electric field is also formed in the first surface region. As a result, the efficiency, with which electrons are injected into a floating gate, is considerably increased.

Abstract: An acceleration sensor has a piezoelectric element which includes a piezoelectric member layer in which a plurality of piezoelectric members are stacked and electrodes which are disposed in major opposed surfaces of the piezoelectric member layer; and a support member for supporting the piezoelectric element, wherein some piezoelectric members of the piezoelectric member layer are polarized. The electrodes are disposed in both surfaces of the polarized piezoelectric members. Capacitors which are formed by the polarized piezoelectric members and the electrodes in both surfaces of the polarized piezoelectric members are connected parallel to each other.

Abstract: In a semiconductor substrate having a surface including a first surface region at a first level, a second surface region at a second level lower than the first level, and a step side region linking the first surface region and the second surface region together, a channel region has a triple structure. Thus, a high electric field is formed in a corner portion between the step side region and the second surface region and in the vicinity thereof. A high electric field is also formed in the first surface region. As a result, the efficiency, with which electrons are injected into a floating gate, is considerably increased.

Abstract: An image forming apparatus having at least: an image carrying member for carrying an electrostatic latent image, the image carrying member having a photosensitive layer on a conductive substrate; a developer for developing the electrostatic latent image carrying member on the image carrying member; a developer carrying member for carrying the developer and conveying it to a development area; a control member making contact with the developer carrying member for controlling the coating amount of the developer; and a cleaning member for cleaning the surface of the photosensitive layer of the image carrying member by making contact with the surface of the image carrying member with a contact pressure of 0.15N (15 gf) to 0.89N (90 gf). The photosensitive layer contains at least one kind of polycarbonate resin (I) having a viscosity average molecular weight of 1.5×104 or less and at least one kind of polycarbonate resin (II) having a viscosity average molecular weight of more than 1.

Abstract: An image forming apparatus includes an image bearing member, a developer carrying member for carrying thereon a developer to transport the developer to a developing zone, and a regulation member provided in touch with the surface of the developer carrying member to regulate coat weight of the developer carried thereon. The image bearing member includes a conductive substrate and a photosensitive layer formed thereon, and the photosensitive layer contains at least one polycarbonate resin (I) having a viscosity-average molecular weight not more than 1.5×104 and at least one polycarbonate resin (II) having a viscosity-average molecular weight more than 1.5×104, the polycarbonate resin (I) being contained in a proportion of from 30% by weight to 95% by weight based on the total weight of the polycarbonate resins (I) and (II). On the developer carrying member, the developer is in a coat weight not more than 1.5 mg/cm2 at the developing zone after its regulation by the regulation member.

Abstract: An image forming apparatus includes an image bearing member for bearing an electrostatic image; a developer carrying member for carrying a developer and for forming a developing zone with the image bearing member, wherein the developer is externally added with additive having a charging polarity opposite from that of the developer; a voltage applying device for applying a developing voltage to the developer carrying member; voltage a control device for controlling the developing voltage so as to change force for directing the additive toward a non-image portion of the image bearing member in accordance with a number of image forming operations.

Abstract: The nonvolatile semiconductor memory device of the invention includes: a semiconductor substrate having a surface including a first surface region at a first level, a second surface region at a second level lower than the first level, and a step side region linking the first and second surface regions; a channel region formed in the first surface region of the semiconductor substrate; a source region and a drain region which are formed in the surface of the semiconductor substrate so as to interpose the channel region therebetween; a first insulating film formed on the surface of the semiconductor substrate; a floating gate formed on the first insulating film; and a control gate capacitively coupled to the floating gate via a second insulating film. The first surface region is an upper surface of an epitaxially grown layer formed on the second surface region.

Abstract: A cartridge detachably attachable on an image forming apparatus a photosensitive member as an image bearing member and a cleaning blade member polycarbonate resin having a viscosity average molecular weight of 1.5.times.10.sup.4 or less is blended with the surface layer of the image bearing member, and the peak value of tan .delta. of the dynamic viscoelastic characteristic of the cleaning blade member appears at 12.degree. C. or less.

Abstract: The nonvolatile semiconductor memory device of the present invention includes: a semiconductor substrate having a surface including a first surface region at a first level, a second surface region at a second level lower than the first level, and a step side region linking the first surface region and the second surface region together; a channel region formed in the first surface region of the semiconductor substrate; a source region and a drain region which are formed in the surface of the semiconductor substrate so as to interpose the channel region therebetween; a first insulating film formed on the surface of the semiconductor substrate; a floating gate formed on the first insulating film; a second insulating film formed on the floating gate; and a control gate which is capacitively coupled to the floating gate via the second insulating film.

Abstract: In a semiconductor substrate having a surface including a first surface region at a first level, a second surface region at a second level lower than the first level, and a step side region linking the first surface region and the second surface region together, a channel region has a triple structure. Thus, a high electric field is formed in a corner portion between the step side region and the second surface region and in the vicinity thereof. A high electric field is also formed in the first surface region. As a result, the efficiency, with which electrons are injected into a floating gate, is considerably increased.

Abstract: A method for fabricating a nonvolatile semiconductor memory device according to the present invention includes the steps of: forming a first mask to define a channel of a memory cell in a semiconductor substrate; doping an impurity into the semiconductor substrate by using the first mask, thereby forming a first doped region in the semiconductor substrate; forming a second mask so as to overlap at least one of a first region of the semiconductor substrate where a source is to be formed and a second region of the semiconductor substrate where a drain is to be formed and at least part of the first mask; etching the semiconductor substrate by using the first and second masks, thereby forming a recessed portion in a region of the semiconductor substrate that is not covered with the first and second masks; forming a second doped region in the recessed portion of the semiconductor substrate; and removing the first and second masks, and forming a gate structure including a first insulating film, a floating gate elec