Abstract: A mask ROM is so configured as to read out information through the utilization of a cumulative time delay involved when a read-out signal applied to memory elements making connection between a word line WL1 and bit lines BL1 crossing the word line is passed through delay elements R1 to R7, that is, as to read out stored information on a time base, in which the conductions of switching transistors T1 to T8 are controlled by the outputs of the delay elements R1 to R7 and the information appearing at the bit line BL1 is sequentially read out at a predetermined time corresponding to a time delay resulting from the delay elements R1 to R7.

Abstract: A mask ROM is so configured as to read out information through the utilization of a cumulative time delay involved when a read-out signal applied to memory elements making connection between a word line WL1 and bit lines BL1 crossing the word line is passed through delay elements R1 to R7, that is, as to read out stored information on a time base, in which the conductions of switching transistors T1 to T8 are controlled by the outputs of the delay elements R1 to R7 and the information appearing at the bit line BL1 is sequentially read out at a predetermined time corresponding to a time delay resulting from the delay elements R1 to R7.