Patents by Inventor Junichi Koezuka

Junichi Koezuka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220013545
    Abstract: Provided is a semiconductor device with high capacitance while the aperture ratio is increased or a semiconductor device whose manufacturing cost is low. The semiconductor device includes a transistor, a first insulating film, and a capacitor including a second insulating film between a pair of electrodes. The transistor includes a gate electrode, a gate insulating film in contact with the gate electrode, a first oxide semiconductor film overlapping with the gate electrode, and a source electrode and a drain electrode electrically connected to the first oxide semiconductor film. One of the pair of electrodes of the capacitor includes a second oxide semiconductor film. The first insulating film is over the first oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is between the first insulating film and the second insulating film.
    Type: Application
    Filed: September 23, 2021
    Publication date: January 13, 2022
    Inventors: Kenichi OKAZAKI, Masami JINTYOU, Takahiro IGUCHI, Yasuharu HOSAKA, Junichi KOEZUKA, Hiroyuki MIYAKE, Shunpei YAMAZAKI
  • Publication number: 20210343869
    Abstract: A semiconductor device with favorable electrical characteristics, a semiconductor device with stable electrical characteristics, or a highly reliable semiconductor device or display device is provided. A first insulating layer and a first conductive layer are stacked over a first region of a first metal oxide layer. A first layer is formed in contact with a second metal oxide layer and a second region of the first metal oxide layer that is not overlapped by the first insulating layer. Heat treatment is performed to lower the resistance of the second region and the second metal oxide layer. A second insulating layer is formed. A second conductive layer electrically connected to the second region is formed over the second insulating layer. Here, the first layer is formed to contain at least one of aluminum, titanium, tantalum, and tungsten.
    Type: Application
    Filed: July 6, 2021
    Publication date: November 4, 2021
    Inventors: Shunpei YAMAZAKI, Junichi KOEZUKA, Masami JINTYOU, Yasutaka NAKAZAWA, Toshimitsu OBONAI
  • Publication number: 20210343754
    Abstract: The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.
    Type: Application
    Filed: July 8, 2021
    Publication date: November 4, 2021
    Inventors: Shunpei YAMAZAKI, Junichi KOEZUKA, Yasutaka NAKAZAWA, Yukinori SHIMA, Masami JINTYOU, Masayuki SAKAKURA, Motoki NAKASHIMA
  • Publication number: 20210343843
    Abstract: A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.
    Type: Application
    Filed: July 8, 2021
    Publication date: November 4, 2021
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasuharu Hosaka, Toshimitsu Obonai, Yukinori Shima, Masami Jintyou, Daisuke Kurosaki, Takashi Hamochi, Junichi Koezuka, Kenichi Okazaki, Shunpei Yamazaki
  • Publication number: 20210343870
    Abstract: A change in electrical characteristics in a semiconductor device including an oxide semiconductor film is inhibited, and the reliability is improved. The semiconductor device includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film, a source electrode electrically connected to the oxide semiconductor film, a drain electrode electrically connected to the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, a first metal oxide film over the second insulating film, and a second metal oxide film over the first metal oxide film. The first metal oxide film contains at least one metal element that is the same as a metal element contained in the oxide semiconductor film. The second metal oxide film includes a region where the second metal oxide film and the first metal oxide film are mixed.
    Type: Application
    Filed: July 16, 2021
    Publication date: November 4, 2021
    Inventors: Shunpei YAMAZAKI, Junichi KOEZUKA, Kenichi OKAZAKI, Masami JINTYOU
  • Patent number: 11158745
    Abstract: A change in electrical characteristics in a semiconductor device including an oxide semiconductor film is inhibited, and the reliability is improved. The semiconductor device includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film, a source electrode electrically connected to the oxide semiconductor film, a drain electrode electrically connected to the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, a first metal oxide film over the second insulating film, and a second metal oxide film over the first metal oxide film. The first metal oxide film contains at least one metal element that is the same as a metal element contained in the oxide semiconductor film. The second metal oxide film includes a region where the second metal oxide film and the first metal oxide film are mixed.
    Type: Grant
    Filed: January 2, 2020
    Date of Patent: October 26, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Junichi Koezuka, Kenichi Okazaki, Masami Jintyou
  • Patent number: 11152494
    Abstract: To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.
    Type: Grant
    Filed: May 20, 2020
    Date of Patent: October 19, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichi Koezuka, Yukinori Shima, Hajime Tokunaga, Toshinari Sasaki, Keisuke Murayama, Daisuke Matsubayashi
  • Patent number: 11152512
    Abstract: A semiconductor device with favorable electrical characteristics, a semiconductor device with stable electrical characteristics, or a highly reliable semiconductor device or display device is provided. A first insulating layer and a first conductive layer are stacked over a first region of a first metal oxide layer. A first layer is formed in contact with a second metal oxide layer and a second region of the first metal oxide layer that is not overlapped by the first insulating layer. Heat treatment is performed to lower the resistance of the second region and the second metal oxide layer. A second insulating layer is formed. A second conductive layer electrically connected to the second region is formed over the second insulating layer. Here, the first layer is formed to contain at least one of aluminum, titanium, tantalum, and tungsten.
    Type: Grant
    Filed: May 7, 2018
    Date of Patent: October 19, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Junichi Koezuka, Masami Jintyou, Yasutaka Nakazawa, Toshimitsu Obonai
  • Publication number: 20210313471
    Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is inhibited and reliability is improved. The transistor includes a first gate electrode; a first insulating film over the first gate electrode; an oxide semiconductor film over the first insulating film; a source electrode electrically connected to the oxide semiconductor film; a drain electrode electrically connected to the oxide semiconductor film; a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode; and a second gate electrode over the second insulating film. The second insulating film includes oxygen. The second gate electrode includes the same metal element as at least one of metal elements of the oxide semiconductor film and has a region thinner than the oxide semiconductor film.
    Type: Application
    Filed: April 28, 2021
    Publication date: October 7, 2021
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Junichi KOEZUKA, Masami JINTYOU, Daisuke KUROSAKI
  • Publication number: 20210313193
    Abstract: In a transistor including an oxide semiconductor layer, an oxide insulating layer is formed so as to be in contact with the oxide semiconductor layer. Then, oxygen is introduced (added) to the oxide semiconductor layer through the oxide insulating layer, and heat treatment is performed. Through these steps of oxygen introduction and heat treatment, impurities such as hydrogen, moisture, a hydroxyl group, or hydride are intentionally removed from the oxide semiconductor layer, so that the oxide semiconductor layer is highly purified.
    Type: Application
    Filed: June 18, 2021
    Publication date: October 7, 2021
    Inventors: Shunpei YAMAZAKI, Junichi KOEZUKA
  • Publication number: 20210305433
    Abstract: A semiconductor device including an oxide semiconductor film that includes a transistor with excellent electrical characteristics is provided. It is a semiconductor device including a transistor. The transistor includes a gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, and a second insulating film. The source electrode and the drain electrode each include a first conductive film, a second conductive film over and in contact with the first conductive film, and a third conductive film over and in contact with the second conductive film. The second conductive film contains copper, the first conductive film and the third conductive film include a material that inhibits diffusion of copper, and an end portion of the second conductive film includes a region containing copper and silicon.
    Type: Application
    Filed: June 14, 2021
    Publication date: September 30, 2021
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yasutaka NAKAZAWA, Junichi KOEZUKA, Takashi HAMOCHI
  • Publication number: 20210280697
    Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.
    Type: Application
    Filed: May 26, 2021
    Publication date: September 9, 2021
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kenichi Okazaki, Junichi Koezuka, Tomonori Nakayama, Motoki Nakashima
  • Publication number: 20210278922
    Abstract: A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.
    Type: Application
    Filed: May 11, 2021
    Publication date: September 9, 2021
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Hajime KIMURA, Masami JINTYOU, Yasuharu HOSAKA, Naoto GOTO, Takahiro IGUCHI, Daisuke KUROSAKI, Junichi KOEZUKA
  • Publication number: 20210273112
    Abstract: A semiconductor device with favorable electric characteristics is provided. The semiconductor device includes a first insulating layer, a second insulating layer, an oxide semiconductor layer, and first to third conductive layers. The oxide semiconductor layer includes a region in contact with the first insulating layer, the first conductive layer is connected to the oxide semiconductor layer, and the second conductive layer is connected to the oxide semiconductor layer. The second insulating layer includes a region in contact with the oxide semiconductor layer, and the third conductive layer includes a region in contact with the second insulating layer. The oxide semiconductor layer includes first to third regions. The first region and the second region are separated from each other, and the third region is located between the first region and the second region. The third region and the third conductive layer overlap with each other with the second insulating layer located therebetween.
    Type: Application
    Filed: May 14, 2021
    Publication date: September 2, 2021
    Inventors: Shunpei YAMAZAKI, Junichi KOEZUKA, Masami JINTYOU, Yukinori SHIMA
  • Patent number: 11107930
    Abstract: A semiconductor device including an oxide semiconductor film that includes a transistor with excellent electrical characteristics is provided. It is a semiconductor device including a transistor. The transistor includes a gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, and a second insulating film. The source electrode and the drain electrode each include a first conductive film, a second conductive film over and in contact with the first conductive film, and a third conductive film over and in contact with the second conductive film. The second conductive film contains copper, the first conductive film and the third conductive film include a material that inhibits diffusion of copper, and an end portion of the second conductive film includes a region containing copper and silicon.
    Type: Grant
    Filed: June 1, 2020
    Date of Patent: August 31, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasutaka Nakazawa, Junichi Koezuka, Takashi Hamochi
  • Publication number: 20210234025
    Abstract: To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.
    Type: Application
    Filed: April 12, 2021
    Publication date: July 29, 2021
    Inventors: Junichi KOEZUKA, Yukinori SHIMA, Hajime TOKUNAGA, Toshinari SASAKI, Keisuke MURAYAMA, Daisuke MATSUBAYASHI
  • Patent number: 11069796
    Abstract: A semiconductor layer containing a metal oxide is formed, a gate insulating layer containing an oxide is formed over the semiconductor layer, and a metal oxide layer is formed over the gate insulating layer. Heat treatment is performed after the metal oxide layer is formed, and the metal oxide layer is removed after the heat treatment is performed. After the metal oxide layer is removed, a gate electrode overlapping with part of the semiconductor layer is formed over the gate insulating layer. Then, a first element is supplied through the gate insulating layer to a region of the semiconductor layer that does not overlap with the gate electrode. Examples of the first element include phosphorus, boron, magnesium, aluminum, and silicon. The steps performed after the metal oxide layer is removed are each preferably performed at a temperature lower than or equal to the temperature of the heat treatment.
    Type: Grant
    Filed: July 30, 2019
    Date of Patent: July 20, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichi Koezuka, Kenichi Okazaki, Masataka Nakada, Yasuharu Hosaka
  • Patent number: 11063066
    Abstract: The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.
    Type: Grant
    Filed: May 23, 2019
    Date of Patent: July 13, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Junichi Koezuka, Yasutaka Nakazawa, Yukinori Shima, Masami Jintyou, Masayuki Sakakura, Motoki Nakashima
  • Patent number: 11063125
    Abstract: A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.
    Type: Grant
    Filed: January 10, 2020
    Date of Patent: July 13, 2021
    Inventors: Yasuharu Hosaka, Toshimitsu Obonai, Yukinori Shima, Masami Jintyou, Daisuke Kurosaki, Takashi Hamochi, Junichi Koezuka, Kenichi Okazaki, Shunpei Yamazaki
  • Publication number: 20210202745
    Abstract: A semiconductor device which has favorable electrical characteristics is provided. A method for manufacturing a semiconductor device with high productivity is provided. A method for manufacturing a semiconductor device with a high yield is provided.
    Type: Application
    Filed: February 22, 2021
    Publication date: July 1, 2021
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yasutaka NAKAZAWA, Yukinori SHIMA, Kenichi OKAZAKI, Junichi KOEZUKA, Shunpei YAMAZAKI