Abstract: An antibody-drug conjugate represented by formula (I): (where Ab is an antibody, X is a group represented by formula (X-1), formula (X-2) or formula (X-3): (where at the left represents the binding site with NH and at the right represents the binding side with D), D is a group represented by formula (D-1) or formula (D-2): (where represents the binding site with X), and n is in the range of about 1 to about 8).

Abstract: A semiconductor device which has favorable electrical characteristics, a method for manufacturing a semiconductor device with high productivity, and a method for manufacturing a semiconductor device with a high yield are provided.

Abstract: The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, and a conductive layer. The first insulating layer is in contact with part of the top surface of the semiconductor layer, the conductive layer is positioned over the first insulating layer, and the second insulating layer is positioned over the semiconductor layer. The semiconductor layer contains a metal oxide and includes a first region overlapping with the conductive layer and a second region not overlapping with the conductive layer. The second region is in contact with the second insulating layer. The second insulating layer contains oxygen and a first element. The first element is one or more of phosphorus, boron, magnesium, aluminum, and silicon.

Abstract: A semiconductor device including an oxide semiconductor film that includes a transistor with excellent electrical characteristics is provided. It is a semiconductor device including a transistor. The transistor includes a gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, and a second insulating film. The source electrode and the drain electrode each include a first conductive film, a second conductive film over and in contact with the first conductive film, and a third conductive film over and in contact with the second conductive film. The second conductive film contains copper, the first conductive film and the third conductive film include a material that inhibits diffusion of copper, and an end portion of the second conductive film includes a region containing copper and silicon.

Abstract: A semiconductor device with favorable electrical characteristics is to be provided. A highly reliable semiconductor device is to be provided. A semiconductor device with lower power consumption is to be provided. The semiconductor device includes a gate electrode, a first insulating layer over the gate electrode, a metal oxide layer over the first insulating layer, a pair of electrodes over the metal oxide layer, and a second insulating layer over the pair of electrodes. The first insulating layer includes a first region and a second region. The first region has a region being in contact with the metal oxide layer and containing more oxygen than the second region. The second region has a region containing more nitrogen than the first region. The metal oxide layer has at least a concentration gradient of oxygen in a thickness direction, and the concentration gradient becomes high on a first region side and on a second region side.

Abstract: A 7-acylamino (or 7-amino)-3-(substituted thiomethyl)cephalosporin derivative or a carboxyl derivative thereof is prepared by heating the corresponding 7-acylamino (or 7-amino)-3-carbamoyloxymethylcephalosporanic acid or a carboxyl derivative thereof with a thiol corresponding to the group which it is desired to introduce at the 3-position under conditions in which the water present is minimized, specifically, either no water is present or the amount of water is limited to less than 5 times the weight of the 7-acylamino (or 7-amino)-3-carbamoyloxymethylcephalosporanic acid or carboxyl derivative thereof. The compounds thus prepared are useful as pharmaceuticals or as intermediates in the production of pharmaceuticals. One of the compounds thus prepared, namely 7.alpha.-methoxy-3-(1-methyl-1H-tetrazol-5-yl)thiomethyl-7.beta.-(O-5-p-ni trobenzoylamino-5-carboxyvaleramido-3-cephem-4-carboxylic acid, is a new compound and it and its salts and esters also form part of the present invention.