Abstract: The present invention provides: a catalyst which has high activity and enables the production of an olefin polymer that has a polar group; and a method for producing the polymer. A catalyst for olefin polymerization, which contains a metal complex represented by general formula (C1); and a method for producing an ethylene (co)polymer, wherein (1) ethylene is polymerized, (2) ethylene and an olefin having a polar group represented by general formula (1) are copolymerized, or (3) ethylene, an olefin having a polar group represented by general formula (1) and another monomer are copolymerized, with use of the above-described catalyst. (In the formulae, the symbols are as defined in the description; and at least one of R6 and R7 represents a 9-fluorenyl analogous group represented by general formula (2).

Abstract: A fluid-filled vibration damping device including: a pressure-receiving chamber; an equilibrium chamber; a partition partitioning the two chambers while including a communication aperture connecting the two chambers; and a rubber elastic plate arranged in the partition while covering the communication aperture. The rubber elastic plate includes: an outside contact-retainer part provided partially along a circumference at an outer edge of the rubber elastic plate while being held overlapped with the partition; an elastic deformation zone provided circumferentially between the outside contact-retainer part to become apart from the partition based on a pressure differential between the two chambers thereby allowing a fluid flow through the communication aperture; and a radial reinforcing rib projecting from a surface of the rubber elastic plate and extending radially outward from an inside contact-retainer part that is held overlapped with the partition toward the elastic deformation zone.

Abstract: A rubber stopper configured to be mounted onto a stopper part of a vibration damping device having a mounting hole, including: a stopper main body to be overlapped on the stopper part; and at least one mounting leg projecting from the stopper main body to be inserted into the mounting hole of the stopper part. The mounting leg includes a neck to be positioned within the mounting hole, a protrusion to pass through the mounting hole and be positioned on a back surface side of the stopper part, and a detent positioned between the neck and the protrusion to be detained with the back surface of the stopper part. The detent includes at least one notched part where an outside diameter of the detent is made small, the notched part being provided partially in a circumferential direction of the detent.

Abstract: A rubber stopper configured to be mounted onto a stopper part of a vibration damping device having a mounting hole, including: a stopper main body to be overlapped on the stopper part; and at least one mounting leg projecting from the stopper main body to be inserted into the mounting hole of the stopper part. The mounting leg includes a neck to be positioned within the mounting hole, a protrusion to pass through the mounting hole and be positioned on a back surface side of the stopper part, and a detent positioned between the neck and the protrusion to be detained with the back surface of the stopper part. The detent includes at least one notched part where an outside diameter of the detent is made small, the notched part being provided partially in a circumferential direction of the detent.

Abstract: An embodiment of the substrate transport method of the present invention includes a plasma CVD apparatus (10), a first transport robot (20) that retrieves the plurality of substrates processed by the plasma CVD apparatus (10) one by one, and sequentially storing the substrates in a substrate cassette (30) capable of loading substrates in multiple stages, and a second transport robot (40) that retrieves the substrates from the substrate cassette (3) one by one and transports the substrates to a pre-patterning alignment step (50).

Abstract: An embodiment of the substrate transport method of the present invention includes a plasma CVD apparatus (10), a first transport robot (20) that retrieves the plurality of substrates processed by the plasma CVD apparatus (10) one by one, and sequentially storing the substrates in a substrate cassette (30) capable of loading substrates in multiple stages, and a second transport robot (40) that retrieves the substrates from the substrate cassette (3) one by one and transports the substrates to a pre-patterning alignment step (50).

Abstract: A semiconductor device such as a thin film transistor has a silicide layer on the gate, drain, and source electrodes formed without abnormal growth phenomena causing short circuits to occur between the electrodes. The gate of the semiconductor device has side walls such that the metal silicide over the gate is relatively lower than a top portion of each of the wall. The distance between the metal silicide over the gate and the top portion of each side wall can be about 300 angstroms. The metal silicide can be cobalt silicide.