Abstract: A counterweight for a hydraulic shovel, which is applicable to a compact to large-sized hydraulic shovels, and is capable of realizing favorable engine maintainability and assurance of sufficient mass, is provided. For this purpose, supporting column portions (12b, 12c) are vertically provided at left and right of a counterweight (12). The left and right supporting column portions are constituted as an increase amount of mass of the counterweight. At least one of a floor frame (30), a canopy (40), outer casings (14, 16) and engine partition walls (33a, 33b) is supported at the left and right supporting column portions. Further, an engine (13) is placed at a position fronting to between the left and right supporting column portions.

Abstract: A counterweight for a hydraulic shovel, which is applicable to a compact to large-sized hydraulic shovels, and is capable of realizing favorable engine maintainability and assurance of sufficient mass, is provided. For this purpose, supporting column portions (12b, 12c) are vertically provided at left and right of a counterweight (12). The left and right supporting column portions are constituted as an increase amount of mass of the counterweight. At least one of a floor frame (30), a canopy (40), outer casings (14, 16) and engine partition walls (33a, 33b) is supported at the left and right supporting column portions. Further, an engine (13) is placed at a position fronting to between the left and right supporting column portions.

Abstract: A method of fabricating a back surface point contact silicon solar cell having p-doped regions and n-doped regions on the same side by forming a passivating layer on a surface of the cell having opened windows at the p-doped regions and the n-doped regions, by depositing and patterning a first metal layer comprising aluminum on the passivating layer in such a way that the first metal layer comes into contact with the p-doped regions and the n-doped regions, by depositing an insulator layer of inorganic material on the first metal layer, by etching and patterning the insulator layer in such a way that the insulator layer has opened windows at, at least one of the p-doped regions and the n-doped regions, and by depositing a second three-layer metal stack comprising materials other than aluminum, on the insulator layer of polyimide in such a way that the second three-layer metal stack comes into contact with the one of the p-doped regions and the n-doped regions.

Abstract: A method of fabricating a back surface point contact silicon solar cell having p-doped regions and n-doped regions on the same side by forming a passivating layer on a surface of the cell having opened windows at the p-doped regions and the n-doped regions, by depositing and patterning a first metal layer on the passivating layer in such a way that the first metal layer comes into contact with the p-doped regions and the n-doped regions, by depositing an insulator layer of polyimide on the first metal layer, by etching and patterning the insulator layer of polyimide in such a way that the insulator layer has opened windows at, at least one of the p-doped regions and the n-doped regions, by curing the insulator layer of polyimide by heating at temperature for a period, by additionally curing the insulator layer of polyimide by heating at a second temperature, which is higher than the first temperature, and by depositing a second metal layer made of metal stack on the insulator layer of polyimide in such a way

Abstract: A method of fabricating a back surface point contact silicon solar cell having p-doped regions and n-doped regions on the same side by forming a passivating layer on a surface of the cell having opened windows at the p-doped regions and the n-doped regions, b depositing and patterning a first metal layer on the passivating layer in such a way that the first metal layer comes into contact with the p-doped regions and the n-doped regions, by depositing a first insulator layer of polyimide on the first metal layer, by etching and patterning the first insulator layer of polyimide in such a way that the insulator layer has opened windows at, at least one of the p-doped regions and the n-doped regions, by depositing a second insulator layer of polyimide on the first insulator layer of polyimide, by etching and patterning the second insulator layer of polyimide in such a way that the insulator layer has opened windows at, at least one of the p-doped regions and the n-doped regions, by curing the first insulator laye

Abstract: A method of fabricating a back surface point contact silicon solar cell having p-doped regions and n-doped regions on the same side by forming a passivating layer on a surface of the cell having opened windows at the p-doped regions and the n-doped regions, by depositing and patterning a first metal layer on the passivating layer in such a way that the first metal layer comes into contact with the p-doped regions and the n-doped regions, by depositing a first insulator layer of inorganic material on the first metal layer, by etching and patterning the first insulator layer in such a way that the insulator layer has opened windows at, at least one of the p-doped regions and the n-doped regions, by depositing a second insulator layer of organic material on the first insulator layer, by etching and patterning the second insulator layer in such a way that the insulator layer has opened windows at the one of the p-doped regions and the n-doped regions, by curing the second insulator layer by heating at a predeterm