Abstract: A haptic function-provided input device performs a touch operation to slide on an input detection plane. The device includes an input detection unit, which has the input detection plane, that detects a touching position of an operation body and a sliding speed of the operation body. The device also includes a computation unit that computes a vibration pattern based on the sliding speed detected by the input detection unit. Further, the device includes a vibration unit that vibrates the input detection plane based on the vibration pattern computed by the computation unit. The computation unit computes the vibration pattern further based on a shift in an excitation timing between two actuators of the vibration unit.

Abstract: Disclosed herein is a touch panel display apparatus including: a display panel; a movable panel unit including a touch panel and being flat plate-like in shape; a movable support section for supporting the movable panel unit on a support structure so as to permit the movable panel unit to be moved along a plane parallel to the panel surface of the movable panel unit; an actuator configured to drive the movable panel unit to vibrate; an actuator drive control section for outputting an actuator drive signal to drivingly control the actuator; an acoustic pressure generating member configured to generate an acoustic pressure by being driven by the actuator to vibrate; and a superposing section for superposing an acoustic signal on the actuator drive signal outputted by the actuator drive control section.

Abstract: A semiconductor device includes: multi-layer interconnection substrate having signal distribution interconnection and power supply line; and semiconductor circuit blocks installed on the multi-layer interconnection substrate for performing required operations. The multi-layer substrate includes: a third interconnection layer having interconnections extending in a first direction; a second interconnection layer having interconnections extending in a second direction which is different to the first direction; and a first interconnection layer having interconnections extends in a direction orthogonal to the first direction.

Abstract: A piezoelectric composite device including: a feeding electrode; a common electrode; a signal detecting electrode; a first piezoelectric element joined between the feeding electrode and the common electrode; and a second piezoelectric element joined between the common electrode and the signal detecting electrode; a predetermined voltage being supplied between the feeding electrode and the common electrode; and a force detection signal based on an external force being extracted from the detecting electrode.

Abstract: A digital camera includes an input detection section, which has an input detection plane, that detects a touching position of a finger of an operator and a sliding speed of the finger, a controller that computes a vibration pattern based on the sliding speed detected by the input detection section, and a vibration section that vibrates the input detection plane based on the vibration pattern thus computed. The controller computes a vibration pattern of the input detection plane to generate vibrations from its low frequency and small amplitude to its high frequency and large amplitude, as the finger goes away from a position where it has touched the input detection plane.

Abstract: A piezoelectric composite device including: a feeding electrode; a common electrode; a signal detecting electrode; a first piezoelectric element joined between the feeding electrode and the common electrode; and a second piezoelectric element joined between the common electrode and the signal detecting electrode; a predetermined voltage being supplied between the feeding electrode and the common electrode; and a force detection signal based on an external force being extracted from the detecting electrode.

Abstract: A memory device having dummy pattern comprises: an alignment mark, provided at a predetermined position on a semiconductor substrate, for aligning position in manufacturing process based on an optical detection signal obtained by scanning in a first direction or in a second direction orthogonal to the first direction in a substrate plane; a real pattern formed in a wiring layer on the semiconductor substrate and used for circuit wiring; and a dummy pattern formed in the wiring layer and used in CMP method. The dummy pattern includes a plurality of basic patterns having a predetermined shape asymmetrical with respect to the first and second directions, and respective pattern portions crossing the basic patterns in the first and second directions in an area in which the dummy pattern is formed are not repeatedly arranged with a constant gap.

Abstract: A semiconductor device includes: multi-layer interconnection substrate having signal distribution interconnection and power supply line; and semiconductor circuit blocks installed on the multi-layer interconnection substrate for performing required operations. The multi-layer substrate includes: a third interconnection layer having interconnections extending in a first direction; a second interconnection layer having interconnections extending in a second direction which is different to the first direction; and a first interconnection layer having interconnections extends in a direction orthogonal to the first direction.

Abstract: A semiconductor storage device in which a pair of wiring lines extending in a first direction are arranged repeatedly with a predetermined pitch, comprising: a group of pair transistors in which a plurality of pair transistors is arranged according to a repetition unit with a predetermined pattern, the pair transistors composed of a MOS transistor of which a gate is connected to one line of the pair of wiring lines and of another MOS transistor of which a gate is connected to the other line of the pair of wiring lines, wherein the repetition unit of the group of pair transistors includes a plurality of the pair transistors such that two MOS transistors are adjacent to each other in the first direction, and at least one pair of pair transistors such that two MOS transistors are not adjacent to each other and diagonally opposite to each other.

Abstract: A piezoelectric composite device including: a feeding electrode; a common electrode; a signal detecting electrode; a first piezoelectric element joined between the feeding electrode and the common electrode; and a second piezoelectric element joined between the common electrode and the signal detecting electrode; a predetermined voltage being supplied between the feeding electrode and the common electrode; and a force detection signal based on an external force being extracted from the detecting electrode.

Abstract: A piezoelectric composite device including: a feeding electrode; a common electrode; a signal detecting electrode; a first piezoelectric element joined between the feeding electrode and the common electrode; and a second piezoelectric element joined between the common electrode and the signal detecting electrode; a predetermined voltage being supplied between the feeding electrode and the common electrode; and a force detection signal based on an external force being extracted from the detecting electrode.

Abstract: Disclosed herein is a touch panel display apparatus including: a display panel; a movable panel unit including a touch panel and being flat plate-like in shape; a movable support section for supporting the movable panel unit on a support structure so as to permit the movable panel unit to be moved along a plane parallel to the panel surface of the movable panel unit; an actuator configured to drive the movable panel unit to vibrate; an actuator drive control section for outputting an actuator drive signal to drivingly control the actuator; an acoustic pressure generating member configured to generate an acoustic pressure by being driven by the actuator to vibrate; and a superposing section for superposing an acoustic signal on the actuator drive signal outputted by the actuator drive control section.

Abstract: Disclosed herein is a piezoelectric composite device including: a feeding electrode; a common electrode; a signal detecting electrode; a first piezoelectric element joined between the feeding electrode and the common electrode; and a second piezoelectric element joined between the common electrode and the signal detecting electrode; a predetermined voltage being supplied between the feeding electrode and the common electrode; and a force detection signal based on an external force being extracted from the detecting electrode.

Abstract: Disclosed herein is a piezoelectric composite device including: a feeding electrode; a common electrode; a signal detecting electrode; a first piezoelectric element joined between the feeding electrode and the common electrode; and a second piezoelectric element joined between the common electrode and the signal detecting electrode; a predetermined voltage being supplied between the feeding electrode and the common electrode; and a force detection signal based on an external force being extracted from the detecting electrode.

Abstract: A semiconductor storage device in which a pair of wiring lines extending in a first direction are arranged repeatedly with a predetermined pitch, comprising: a group of pair transistors in which a plurality of pair transistors is arranged accoridng to a repetition unit with a predetermined pattern, the pair transistors composed of a MOS transistor of which a gate is connected to one line of the pair of wiring lines and of another MOS transistor of which a gate is connected to the other line of the pair of wiring lines, wherein the repetition unit of the group of pair transistors includes a plurality of the pair transistors such that two MOS transistors are adjacent to each other in the first direction, and at least one pair of pair transistors such that two MOS transistors are not adjacent to each other and diagonally opposite to each other.

Abstract: The inclination of a word line near asymmetrical contacts is improved by providing an extending portion between the contact and the word line in a DRAM cell array pattern having the asymmetrical contact at an end portion of the word line extending in one direction. The extending portion is provided symmetrically to the word line or is provided on the opposed side of the extending direction of the asymmetrical contact. Alternatively, the extending portion is provided for a bit line as well as the word line.

Abstract: The inclination of a word line near asymmetrical contacts is improved by providing an extending portion between the contact and the word line in a DRAM cell array pattern having the asymmetrical contact at an end portion of the word line extending in one direction. The extending portion is provided symmetrically to the word line or is provided on the opposed side of the extending direction of the asymmetrical contact. Alternatively, the extending portion is provided for a bit line as well as the word line.

Abstract: A method for fabricating an electric circuit device able to ensure bonding strength and bond bumps without occurrence of cratering or other mechanical damages.

Abstract: A semiconductor dynamic random access memory device or a ferroelectric random access memory device has dummy cells arranged around memory cells of each array so as to prevent the memory cells from a pattern defect during a fabrication process, and the dummy cells have dummy capacitors connected through a power distributing line to an internal power source so as to render the internal power voltage on the power distributing line stable.

Abstract: A method for fabricating an electric circuit device able to ensure bonding strength and bond bumps without occurrence of cratering or other mechanical damages