Abstract: A laser treatment device performing treatment by irradiating a target object having a plate surface with laser light, including: a light-transmitting region transmitting laser light emitted onto the target object; a rectifier that has a rectifier surface separated from the target object and extending along the plate surface of the target object and outward from the end of the light-transmitting region; a gas supply unit that feeds a gas to a gap between one side of the rectifier surface and the light-transmitting region, in a position separated from the light-transmitting region; and a gas exhaust unit that exhausts, on the other side that is on the other side of the light-transmitting region from the one side, the gas present in a gap between the rectifier surface and the target object from the gap, in a position separated from the light-transmitting region, thereby generating a stable local gas atmosphere.

Abstract: A method of manufacturing a display device having an organic EL device includes the steps of: forming an organic EL device over a substrate; and forming a protection film so as to cover the organic EL device. The protection film is made of a laminated film of a first insulating film containing Si, a second insulating film containing Al and a third insulating film containing Si. The step of forming the protection film includes the steps of: forming the first insulating film by a plasma CVD method so as to cover the organic EL device; forming the second insulating film over the first insulating film by an ALD method; and forming the third insulating film over the second insulating film by a plasma CVD method.

Abstract: In a film-forming technology using charged particles, a disturbance in film thickness distribution caused by leakage magnetic field is suppressed. A film-forming method embodies a technological idea of switching generation and stop of a magnetic field during a film-forming operation so as to stop the generation of the magnetic field during a period when plasma is generated and generate the magnetic field during a period when plasma is not generated.

Abstract: In a film-forming technology using charged particles, a disturbance in film thickness distribution caused by leakage magnetic field is suppressed. A film-forming method embodies a technological idea of switching generation and stop of a magnetic field during a film-forming operation so as to stop the generation of the magnetic field during a period when plasma is generated and generate the magnetic field during a period when plasma is not generated.

Abstract: A method of manufacturing a display apparatus having an organic EL element includes: a step of forming the organic EL element over a substrate made of a flexible substrate; and a step of forming a protecting film 16 made of an inorganic insulating material so as to cover the organic EL element by using an ALD method. In the step of forming the protecting film 16, the protecting film 16 is formed by alternately performing a step of forming a high-density layer 16H by using an ALD method and a step of forming, by using an ALD method, a low-density layer 16L that has the same constituent element as the high-density layer 16H and has a lower density than the high-density layer 16H. The protecting film 16 has a layered structure made of one or more high-density layers 16H and one or more low-density layers 16L so that the low-density layer 16L and the high-density layer 16H are alternately layered so as to be in contact with each other.

Abstract: In a film-forming technology using charged particles, a disturbance in film thickness distribution caused by leakage magnetic field is suppressed. A film-forming method embodies a technological idea of switching generation and stop of a magnetic field during a film-forming operation so as to stop the generation of the magnetic field during a period when plasma is generated and generate the magnetic field during a period when plasma is not generated.

Abstract: A method of manufacturing a display apparatus having an organic EL element includes: a step of forming the organic EL element over a substrate made of a flexible substrate; and a step of forming a protecting film 16 made of an inorganic insulating material so as to cover the organic EL element by using an ALD method. In the step of forming the protecting film 16, the protecting film 16 is formed by alternately performing a step of forming a high-density layer 16H by using an ALD method and a step of forming, by using an ALD method, a low-density layer 16L that has the same constituent element as the high-density layer 16H and has a lower density than the high-density layer 16H. The protecting film 16 has a layered structure made of one or more high-density layers 16H and one or more low-density layers 16L so that the low-density layer 16L and the high-density layer 16H are alternately layered so as to be in contact with each other.

Abstract: A laser treatment device performing treatment by irradiating a target object having a plate surface with laser light, including: a light-transmitting region transmitting laser light emitted onto the target object; a rectifier that has a rectifier surface separated from the target object and extending along the plate surface of the target object and outward from the end of the light-transmitting region; a gas supply unit that feeds a gas to a gap between one side of the rectifier surface and the light-transmitting region, in a position separated from the light-transmitting region; and a gas exhaust unit that exhausts, on the other side that is on the other side of the light-transmitting region from the one side, the gas present in a gap between the rectifier surface and the target object from the gap, in a position separated from the light-transmitting region, thereby generating a stable local gas atmosphere.

Abstract: A method of manufacturing a display device having an organic EL device includes the steps of : forming an organic EL device over a substrate; and forming a protection film so as to cover the organic EL device. The protection film is made of a laminated film of a first insulating film containing Si, a second insulating film containing Al and a third insulating film containing Si. The step of forming the protection film includes the steps of: forming the first insulating film by a plasma CVD method so as to cover the organic EL device; forming the second insulating film over the first insulating film by an ALD method; and forming the third insulating film over the second insulating film by a plasma CVD method.

Abstract: Provided is a laser annealing treatment including a laser light source that outputs pulse laser light, an optical system that shapes the pulse laser light, and leads the shaped pulse laser light to a semiconductor film subject to treatment, and a stage that carries the semiconductor film to be irradiated by the pulse laser light, wherein the pulse laser light irradiating the semiconductor film presents a rising time equal to or less than 35 nanoseconds from 10% of the maximum height to the maximum height in the pulse energy density, and a falling time equal to or more than 80 nanoseconds from the maximum height to 10% of the maximum height, thereby increasing, while an energy density suitable for crystallization and the like is not particularly increased, a margin quantity thereof, and carrying out high quality annealing treatment without decreasing a throughput.

Abstract: Provided is a laser annealing treatment including a laser light source that outputs pulse laser light, an optical system that shapes the pulse laser light, and leads the shaped pulse laser light to a semiconductor film subject to treatment, and a stage that carries the semiconductor film to be irradiated by the pulse laser light, wherein the pulse laser light irradiating the semiconductor film presents a rising time equal to or less than 35 nanoseconds from 10% of the maximum height to the maximum height in the pulse energy density, and a falling time equal to or more than 80 nanoseconds from the maximum height to 10% of the maximum height, thereby increasing, while an energy density suitable for crystallization and the like is not particularly increased, a margin quantity thereof, and carrying out high quality annealing treatment without decreasing a throughput.

Abstract: A method for quantitative determination of nickel and/or copper, by which an ultratrace amount of nickel and/or copper contained in a liquid sample can be easily and simply determined in situ; and apparatus to be used in the method. The method comprises a step of adding a complex-forming agent capable of forming a complex with nickel and copper to a liquid sample containing nickel and/or copper in unknown concentrations to form colored fine particles of a nickel complex and/or a copper complex and a step of determining the quantities of nickel and/or copper on the basis of the colored fine particles.

Abstract: A first mirror (5) that can be located at a reflection position (I) at which an optical path is blocked and a laser beam (a) is reflected, and a second mirror (6) that reflects the laser beam (a) which is reflected by the first mirror (5) are disposed between the condenser lens (2) and the object to be irradiated (4). The first mirror (5) is located at the reflection position (I) so that the laser beam (a) that is transmitted through the condenser lens (2) is sequentially reflected by the first and second mirrors (5 and 6), and an intensity of the laser beam (a) that is again reflected by the first mirror (5) is made to coincide with an intensity of the laser beam (a) that is reflected from the object to be irradiated (4), and the condenser lens (2) is heated in the same manner that the processing laser beam (a) is transmitted through the condenser lens (2) and irradiated on the object to be irradiated (4).

Abstract: Because a focal distance of a condenser lens is changed due to a change in temperature, when irradiation of a laser beam is restarted after the irradiation has stopped, it takes a long time to restore a temperature of the cooled lens to a given temperature, and the operating efficiency is deteriorated. A first mirror 5 that can be located at a reflection position I at which an optical path is blocked and a laser beam a is reflected, and a second mirror 6 that reflects the laser beam a which is reflected by the first mirror 5 are disposed between the condenser lens 2 and the object to be irradiated 4.

Abstract: Because a focal distance of a condenser lens is changed due to a change in temperature, when irradiation of a laser beam is restarted after the irradiation has stopped, it takes a long time to restore a temperature of the cooled lens to a given temperature, and the operating efficiency is deteriorated. A first mirror 5 that can be located at a reflection position I at which an optical path is blocked and a laser beam a is reflected, and a second mirror 6 that reflects the laser beam a which is reflected by the first mirror 5 are disposed between the condenser lens 2 and the object to be irradiated 4.

Abstract: Because a focal distance of a condenser lens is changed due to a change in temperature, when irradiation of a laser beam is restarted after the irradiation has stopped, it takes a long time to restore a temperature of the cooled lens to a given temperature, and the operating efficiency is deteriorated. A first mirror 5 that can be located at a reflection position I at which an optical path is blocked and a laser beam a is reflected, and a second mirror 6 that reflects the laser beam a which is reflected by the first mirror 5 are disposed between the condenser lens 2 and the object to be irradiated 4.

Abstract: A mask distance a is adjusted with magnification control unit and mask-shift servo-control unit, and a base plate distance b is adjusted with focus control unit, AFC control unit and table-shift servo-control unit, so that a/b is kept constant, and 1/f=1/a+1/b is satisfied. Even when a focal distance of projection lens fluctuates from temperature change of projection lens due to laser beams, projection magnification is able to be kept constant and focusing is precisely carried out upon imaging mask on the base. The invention is usable for ELA (excimer laser anneal) apparatus of SLS (Sequential Lateral Solidification) type.