Abstract: A dust core includes a binder and magnetic particles. The binder includes an epoxy resin. The magnetic particles are dispersed in the binder. The epoxy resin has at least two or more mesogenic skeletons between two epoxy bonds adjacent along a molecular chain.

Abstract: A dust core includes magnetic particles, an epoxy resin, and an additive. The epoxy resin has at least two or more mesogenic skeletons between two epoxy bonds adjacent along a molecular chain. The additive includes one or more metallic elements selected from Li, Ba, Mg, and Ca.

Abstract: A coil-embedded magnetic core capable of achieving improvements both in insulation and initial magnetic permeability, and coil devices thereof. The coil-embedded magnetic core embedding a coil made of a conductor, including magnetic powder and a resin, in which the coil-embedded magnetic core further includes a modifier.

Abstract: A control device is capable of executing a first abnormality control, a retraction control, and a second abnormality control. The first abnormality control is a control in which a transferable range in which the normal unit is capable of transferring the article to and from the storage section without interfering with the abnormal unit is set to a partial range of the article storage rack, and the normal unit is operated using one or more of the storage sections included in the transferable range as the transfer target location. The second abnormality control is a state in which the abnormal unit is retracted to the retracted position, the transferable range is set to a range wider than the transferable range set in the first abnormality control, and the normal unit is operated using a plurality of the storage sections included in the transferable range as the transfer target location.

Abstract: A dust core includes a metal magnetic material, a resin, an insulation film, and an intermediate layer. The insulation film covers the metal magnetic material. The intermediate layer exists between the insulation film and the metal magnetic material and contacts therebetween. The metal magnetic material includes 85 to 99.5 wt % of Fe, 0.5 to 10 wt % of Si, and 0 to 5 wt % of other elements, with respect to 100 wt % of the entire metal magnetic material. The intermediate layer includes a Fe—Si—O based oxide. The insulation film includes a Si—O based oxide.

Abstract: A dust core includes a metal magnetic material, a resin, an insulation film, and an intermediate layer. The insulation film covers the metal magnetic material. The intermediate layer exists between the insulation film and the metal magnetic material and contacts therebetween. The metal magnetic material includes 85 to 99.5 wt % of Fe, 0.5 to 10 wt % of Si, and 0 to 5 wt % of other elements, with respect to 100 wt % of the entire metal magnetic material. The intermediate layer includes a Fe—Si—O based oxide. The insulation film includes a Si—O based oxide.

Abstract: A three-dimensional data processing apparatus includes: a superposition unit configured to superpose obtained point group data and CAD data on a three-dimensional coordinates; a segment extraction unit configured to extract a segment of the point group data corresponding to each of a CAD parts which is constituent of the CAD data; and a segment operating unit configured to operate the segment in the three-dimensional coordinates.

Abstract: The present invention provides a substrate holding method capable of contributing to improvement in performance of an electronic part. A plastic film is adhered to a holding frame by using an adhesive tape having a proper gas releasing characteristic such that total quantity of gas detected when analysis using gas chromatograph mass spectrometry (dynamic HS-GC-MS) is conducted under test conditions of 180° C. and 10 minutes is 100.5 ?g/g or less in n-tetradecane. In the case where the plastic film held by the holding frame is subjected to a process of manufacturing an electronic part (for example, a solar battery), even when a process accompanying generation of heat during the manufacturing process (for example, a film forming process such as plasma CVD) is performed on the plastic film, a release amount of unnecessary gas released from the adhesive tape due to the influence of the heat is suppressed, so that deterioration in the performance of the electronic part caused by the unnecessary gas is suppressed.

Abstract: The present invention provides a substrate holding method capable of contributing to improvement in performance of an electronic part. A plastic film is adhered to a holding frame by using an adhesive tape having a proper gas releasing characteristic such that total quantity of gas detected when analysis using gas chromatograph mass spectrometry (dynamic HS-GC-MS) is conducted under test conditions of 180° C. and 10 minutes is 100.5 ?g/g or less in n-tetradecane. In the case where the plastic film held by the holding frame is subjected to a process of manufacturing an electronic part (for example, a solar battery), even when a process accompanying generation of heat during the manufacturing process (for example, a film forming process such as plasma CVD) is performed on the plastic film, a release amount of unnecessary gas released from the adhesive tape due to the influence of the heat is suppressed, so that deterioration in the performance of the electronic part caused by the unnecessary gas is suppressed.

Abstract: The present invention provides a switching circuit and an electronic switching component having a switching semiconductor device to perform switching between a conducting state and a non-conducting state of a conducting path to thereby reduce the power loss thereof and a control method thereof. In the present invention, at least two FETs 11 and 12, wherein the FET 11 has a faster switching time and the FET 12 has a lower ON resistance. Active terminals (drains and sources) of the FETs 11 and 12 are connected to each other in parallel. By employing these FETs 11 and 12, the conversion between an ON-state and an OFF-state of the conducting path is performed. In converting from the non-conducting state to the conducting state, the control circuit 13 first turns on the FET 11 and then turns on the FET 12 when if a voltage between terminals of the FET 11 reaches around a saturation value thereof.

Abstract: It is an object of the present invention to provide a method and an apparatus for driving a piezoelectric transformer capable of always driving with maximum conversion efficiency regardless of changes in the input voltage level, load and temperature, etc.

Abstract: An organic EL device comprises a substrate, an organic EL structure stacked on the substrate, a sealing plate located on the organic EL structure with a predetermined space therebetween, and a sealing adhesive agent for fixing the sealing plate on the substrate and thereby closing up the organic EL structure. The sealing adhesive agent is a photo-curing type adhesive agent which, upon photo-curing, generates gases under heating conditions of 85° C. and 60 minutes. In these gases, the total amount of a low-molecular straight-chain aliphatic hydrocarbon which may have a substituent, an aromatic hydrocarbon which may have a substituent, an alicyclic hydrocarbon which may have a substituent, and a heterocyclic compound and a siloxane which may have a substituent is 200 &mgr;g/g or lower calculated as benzene.

Abstract: A power source 1 and an operating circuit 4 incorporating a waveform generating circuit 5 for synthesizing composite wave W obtained by synthesizing a sine wave of primary oscillations and a sine wave of secondary oscillations of a Rosen-type piezoelectric transformer and an amplifying circuit 6 raises the voltage of the composite wave so that composite wave W' (having a waveform similar to that of W) is, as input voltage V.sub.in, supplied to the Rosen-type piezoelectric transformer PT. Thus, output voltage V.sub.out having greater output electric power and higher transmitting efficiencies as compared with output voltage which can be obtained from a conventional structure in which input voltage in a single oscillation mode is employed can be produced to load resistor R.sub.o.