Abstract: To provide an electric or electronic device having excellent heat resistance and moisture resistance. The electric or electronic device of the present disclosure having a configuration including a first electrode layer, a conductive material layer, and a second electrode layer that are layered in this order, the conductive material layer containing a conductive material having a configuration in which a conjugated macromolecular compound is doped with an anion selected from the group consisting of a nitrogen anion, a boron anion, a phosphorus anion, and an antimony anion. The anion is preferably an anion represented by Formula (a-1) or (a-2).

Abstract: A method for producing a patterned organic film includes: forming a hydrophobic organic film on a hydrophilic and non-water-soluble first substrate using a coating method, pressing the organic film formed on the first substrate against a convex portion of a stamp having the convex portion and a concave portion, transferring the organic film to the convex portion by applying water or an aqueous solution to an interface between the first substrate and the organic film, and pressing the organic film transferred to the convex portion against a second substrate to transfer the organic film to the second substrate to obtain a patterned organic film, wherein at least one of the organic film and the second substrate is an organic semiconductor.

Abstract: Provided is a compound that is excellent in chemical stability, has high solubility in a solvent, and exhibits excellent carrier mobility. A compound represented by Formula (1): where in Formula (1), X1, X2, X3, and R1 to R10 are as defined in the specification.

Abstract: Provided are an organic thin film transistor, an organic semiconductor film, a compound, an organic thin film transistor-forming composition, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes the organic semiconductor film. The organic semiconductor film includes a compound represented by a specific formula. The organic semiconductor film, the compound, and the organic thin film transistor-forming composition can be preferably used in the organic thin film transistor. The method of manufacturing the organic thin film transistor includes a step of forming an organic semiconductor film by applying the organic thin film transistor-forming composition to a substrate.

Abstract: The method for producing an electrically conductive polymer material includes: a preparing step of providing a polymer film formed from an oriented polymeric semiconductor; and a doping step of introducing a first ion into the polymer film, in the doping step, a treatment liquid, which is obtained by dissolving, in an ionic liquid including the first ion having the opposite polarity to carriers to be injected into the polymeric semiconductor by doping in the form of a cation and an anion or an organic solvent having dissolved therein a salt including the first ion, a dopant which has the same polarity as that of the first ion and which oxidizes or reduces the polymeric semiconductor, is allowed to be in contact with the surface of the polymer film to form an intermediate of a second ion formed by ionization of the dopant and the polymeric semiconductor by a redox reaction, and to replace the second ion in the intermediate with the first ion.

Abstract: A sensor device that detects information related to a load or a torque acting on a detection object includes a plurality of sensor members that are attached to the detection object and are connected in parallel, and an estimation unit that estimates the information related to the load or the torque acting on the detection object based on detected values of the plurality of sensor members.

Abstract: The present disclosure provides fine electrodes in which an organic semiconductor does not easily change with time, and which can be applied to manufacturing of a practical integrated circuit of an organic semiconductor device. The present disclosure relates to electrodes for source/drain of an organic semiconductor device, comprising 10 or more sets of electrodes, wherein a channel length between the electrodes in each set is 200 ?m or less, and the electrodes in each set have a surface with a surface roughness Rq of 2 nm or less.

Abstract: Provided is a conductor material having high conductivity. The conductor material according to an embodiment of the present disclosure has a configuration in which a conjugated polymeric compound having an electron donating group containing a heteroatom in a side chain is doped with a dopant containing an anion selected from a nitrogen anion, a boron anion, a phosphorus anion and an antimony anion, and a counter cation. The anion is preferably an anion represented by Formula (1) below: where R1 and R2 are identical or different, and each represent an electron withdrawing group; and R1 and R2 may be bonded to each other to form a ring with an adjacent nitrogen atom.

Abstract: An organic semiconductor element of the present invention includes: an organic semiconductor film formed from single crystal of an organic semiconductor, and a doped layer formed in a surface of the organic semiconductor film. A strain sensor of the present invention includes: the organic semiconductor element, a pair of electrodes which are electrically connected through the doped layer, and a substrate which is deformable, and which has the organic semiconductor element formed on one surface thereof. A vibration sensor of the present invention includes: the organic semiconductor element, a pair of electrodes which are electrically connected through the doped layer, and a substrate which has flexibility, and which is fixed at one end or both ends thereof, the substrate having the organic semiconductor element formed on the surface of the flexible portion of the substrate.

Abstract: Provided is a dopant with which a conductor material having high electrical conductivity can be formed. The present disclosure relates to a dopant containing a radical cation represented by Formula (1) and a counter anion. In Formula (1), R1 to R3 may be the same or different, and each denotes a monovalent aromatic group or a group represented by Formula (r). at least one of R1 to R3 is a group represented by Formula (r), and n indicates the valence of the radical cation and is equal to the quantity (n) of nitrogen atoms in the formula. In Formula (r), Ar1, Ar2, and Ar3 may be the same or different, and each denotes a divalent aromatic group, and Ar4, Ar5, Ar6, and Ar7 may be the same or different, and each denotes a monovalent aromatic group optionally having a substituent represented by Formula (sb) below. Furthermore, m and n may be the same or different, and each represents an integer of 0 or greater.

Abstract: A novel dopant according to the present disclosure includes an anion represented by the following Formula (1) and a counter cation. In Formula (1), R1 and R2 may be each at least one group selected from a nitro group, a cyano group, an acyl group, a carboxyl group, an alkoxycarbonyl group, a haloalkyl group, a sulfo group, an alkylsulfonyl group, an halosulfonyl group, and a haloalkylsulfonyl group, or may be a group formed by R1 and R2 bonded to each other [—SO2-L-SO2—] (where L represents a haloalkylene group). The counter cation may be a radical cation represented by Formula (2), where R1 and R2 represent electron-withdrawing groups that may be bonded to each other to form a heterocycle, and R3 to R5 represent a hydrogen atom, a hydrocarbon group that may have a substituent, or a heterocyclic group that may have a substituent. The dopant is capable of forming an electroconductive composition that shows a high conductivity.

Abstract: Provided is a conductor material having high conductivity. The conductor material according to an embodiment of the present disclosure has a configuration in which a conjugated polymeric compound having an electron donating group containing a heteroatom in a side chain is doped with a dopant containing an anion selected from a nitrogen anion, a boron anion, a phosphorus anion and an antimony anion, and a counter cation. The anion is preferably an anion represented by Formula (1) below: where R1 and R2 are identical or different, and each represent an electron withdrawing group; and R1 and R2 may be bonded to each other to form a ring with an adjacent nitrogen atom.

Abstract: Electronic devices to be integrated are formed on individual boards, the boards are laid to overlap each other in a predetermined relationship, and then through vias are formed at predetermined positions. With this, the electronic devices are electrically connected to each other, and function as an integrated device.

Abstract: The present disclosure provides an inorganic/organic hybrid complementary semiconductor device that can be manufactured at a lower cost, has excellent long-term stability, has a well-balanced operation between the p-type transistor and the n-type transistor, and operates at a high speed.

Abstract: Provided is a novel chalcogen-containing organic semiconductor compound having excellent carrier mobility. The compound is represented by Formula (1a) or (1b): [Chem. 1] where in Formulas (1a) and (1b), X represents S, O, or Se, and R1 each independently represents a hydrogen atom, a halogen atom, an alkyl group, an aryl group, an aralkyl group, a pyridyl group, a furyl group, a thienyl group, or a thiazolyl group.

Abstract: The present disclosure provides a sealing material suitable for a compound having a non-stoichiometric composi263tion. The present disclosure is related to a sealing material for a compound having a non-stoichiometric composition, the sealing material including a polymer layer and an inorganic oxide insulator layer, wherein the polymer layer includes a first polymer layer containing an organic solvent soluble polymer.

Abstract: An object of the present invention is to provide a composition capable of manufacturing an organic thin film transistor having excellent carrier mobility even under low temperature conditions. The composition of the present invention contains a compound represented by Formula (1) and an alcohol represented by Formula (S1).

Abstract: Provided is a compound capable of forming through a printing process an organic semiconductor exhibiting high charge mobility. The compound according to the present disclosure is represented by Formula (1) below. In Formula (1), X1 and X2 are the same or different and each represent —O—, —NR1—, or —PR2-. Y1 and Y2 are the same or different and each represent an oxygen atom or a sulfur atom. Z1 to Z8 are the same or different and each represent ?N— or ?CR3—. The R1, R2, and R3 are the same or different and each represent a hydrogen atom or an organic group. n represents an integer of 0 or greater.

Abstract: Provided is a semiconductor device and a method of manufacturing the semiconductor device that is capable of improving the connection reliability between an electronic element and a substrate in a semiconductor device in which the electronic element is fixed to the substrate. The semiconductor device includes: a substrate 10 provided with wirings and wiring connection parts 12 connected to the wirings; electronic elements 20, 30, 40, and 50 electrically connected to the wiring connection parts 12 and fixed to the substrate; and a resin film 60 laminated on one surface of the substrate 10, conforming to the shapes of the electronic elements 20, 30, 40, and 50, and covering the electronic elements 20, 30, 40, and 50.

Abstract: Provided is a conductor material having high conductivity. The conductor material according to an embodiment of the present disclosure has a configuration in which a conjugated polymeric compound having an electron donating group containing a heteroatom in a side chain is doped with a dopant containing an anion selected from a nitrogen anion, a boron anion, a phosphorus anion and an antimony anion, and a counter cation. The anion is preferably an anion represented by Formula (1) below: where R1 and R2 are identical or different, and each represent an electron withdrawing group; and R1 and R2 may be bonded to each other to form a ring with an adjacent nitrogen atom.