Abstract: In a plasma treating apparatus for carrying out a plasma treatment over a silicon wafer 6 having a protective tape 6a stuck to a circuit formation face, the silicon wafer 6 is mounted on a mounting surface 3d which is provided on an upper surface of a lower electrode 3 formed of a conductive metal with the protective tape 6a turned toward the mounting surface 3d. When a DC voltage is to be applied to the lower electrode 3 by a DC power portion 18 for electrostatic adsorption to adsorb and hold the silicon wafer 6 onto the lower electrode 3 in the plasma treatment, the protective tape 6a is utilized as a dielectric for the electrostatic adsorption. Consequently, the dielectric can be thinned as much as possible and the silicon wafer 6 can be held by a sufficient electrostatic holding force.

Abstract: In a plasma treating apparatus for carrying out a plasma treatment over a silicon wafer 6 having a protective tape 6a stuck to a circuit formation face, the silicon wafer 6 is mounted on a mounting surface 3d which is provided on an upper surface of a lower electrode 3 formed of a conductive metal with the protective tape 6a turned toward the mounting surface 3d. When a DC voltage is to be applied to the lower electrode 3 by a DC power portion 18 for electrostatic adsorption to adsorb and hold the silicon wafer 6 onto the lower electrode 3 in the plasma treatment, the protective tape 6a is utilized as a dielectric for the electrostatic adsorption. Consequently, the dielectric can be thinned as much as possible and the silicon wafer 6 can be held by a sufficient electrostatic holding force.

Abstract: In a plasma treating apparatus for carrying out a plasma treatment over a silicon wafer 6 having a protective tape 6a stuck to a circuit formation face, the silicon wafer 6 is mounted on a mounting surface 3d which is provided on an upper surface of a lower electrode 3 formed of a conductive metal with the protective tape 6a turned toward the mounting surface 3d. When a DC voltage is to be applied to the lower electrode 3 by a DC power portion 18 for electrostatic adsorption to adsorb and hold the silicon wafer 6 onto the lower electrode 3 in the plasma treatment, the protective tape 6a is utilized as a dielectric for the electrostatic adsorption. Consequently, the dielectric can be thinned as much as possible and the silicon wafer 6 can be held by a sufficient electrostatic holding force.

Abstract: A fixing roller cooperates with a pressing roller to heat and press a toner image to a recording medium so as to fix the toner image to the recording medium. A sheet-like web is impregnated with a mold release for supplying the mold release to a surface of the fixing roller by being pressed by the pressing roller. A first shaft has an unused portion of the web wound therearound, and a second shaft takes up the web after supplying the mold release to the fixing roller. A coil spring applies a rotational force in a direction opposite to a direction of drawing out the web relative to the first shaft so as to apply a tension to the web, thereby automatically removing slackness of the web.