Abstract: A process for producing a fluorine gas of the invention comprises a step (1) of generating a fluorine gas by sectioning the interior of a fluorine gas generation container equipped with a heating means, by the use of a structure having gas permeability, then filling each section with a high-valence metal fluoride and heating the high-valence metal fluoride. The process may comprise a step (2) of allowing the high-valence metal fluoride, from which a fluorine gas has been generated in the step (1), to occlude a fluorine gas. According to the process of the invention, a high-purity fluorine gas that is employable as an etching gas or a cleaning gas in the process for manufacturing semiconductors or liquid crystals can be produced inexpensively on a mass scale.

Abstract: A method of manufacturing manganese tetrafluoride comprises reacting a manganese compound and a fluorinating agent at a temperature of 250-350° C. and a pressure of 1.0-10.0 MPs to fluorinate the compound, while constantly or discontinuously crushing or grinding the starting compound and the manganese compound being reacted. According lo the method, since. fluorine is deeply penetrated into the interior of the manganese salt particles, the ratio of conversion to manganese tetrafluoride, MnF4 can he improved.

Abstract: A process for producing a fluorine gas of the invention comprises a step (1) of generating a fluorine gas by sectioning the interior of a fluorine gas generation container equipped with a heating means, by the use of a structure having gas permeability, then filling each section with a high-valence metal fluoride and heating the high-valence metal fluoride. The process may comprise a step (2) of allowing the high-valence metal fluoride, from which a fluorine gas has been generated in the step (1), to occlude a fluorine gas. According to the process of the invention, a high-purity fluorine gas that is employable as an etching gas or a cleaning gas in the process for manufacturing semiconductors or liquid crystals can be produced inexpensively on a mass scale.

Abstract: A step (1) of heating a fluoronickel compound to release a fluorine gas, a step (2) of allowing a fluorine gas to be occluded into a fluorinated compound, and a step (3) of heating the fluoronickel compound and reducing an inner pressure are conducted in a container, respectively, at least once, and thereafter a high-purity fluorine gas is obtained in the step (1). Also, a step (5) of heating a fluoronickel compound and reducing an inner pressure and a step (6) of allowing a fluorine gas reduced in a hydrogen fluoride content to be occluded into the fluoronickel compound are conducted in a container having a fluorinated layer formed on its surface, respectively, at least once, the step (5) is further conducted, and thereafter a fluorine gas containing impurity gases is contacted with the fluoronickel compound to fix and remove the fluorine gas, and the impurities are analyzed by gas chromatography.

Abstract: A step (1) of heating a fluoronickel compound to release a fluorine gas, a step (2) of allowing a fluorine gas to be occluded into a fluorinated compound, and a step (3) of heating the fluoronickel compound and reducing an inner pressure are conducted in a container, respectively, at least once, and thereafter a high-purity fluorine gas is obtained in the step (1). Also, a step (5) of heating a fluoronickel compound and reducing an inner pressure and a step (6) of allowing a fluorine gas reduced in a hydrogen fluoride content to be occluded into the fluoronickel compound are conducted in a container having a fluorinated layer formed on its surface, respectively, at least once, the step (5) is further conducted, and thereafter a fluorine gas containing impurity gases is contacted with the fluoronickel compound to fix and remove the fluorine gas, and the impurities are analyzed by gas chromatography.

Abstract: A supplying method and a supplying apparatus for supplying fluorine gas, in which when a fluorine-occluding substance is used for the fluorine gas-generating means, a necessary amount of fluorine gas can be stably and swiftly supplied to have a uniform concentration to &a chamber of an excimer laser device or the like even at running, to say nothing of the gas exchange time. In a fluorine gas-generating means, fluorine gas is generated at the use point by controlling a fluorine-occluding substance to a predetermined temperature, the fluorine gas is introduced into a mixing container, a diluting gas is introduced into the mixing container to mix it with the fluorine gas to prepare a fluorine mixed gas having a predetermined pressure and a predetermined fluorine gas concentration, and the fluorine mixed gas reserved in the mixing container is supplied to a use side such as chamber, using the pressure difference.

Abstract: A treating method comprising contacting a fluorine-containing interhalogen compound first with a treating agent for the fluorine component and then with a treating agent for the halogen component, treating agents therefor, and a method for treating exhaust gas containing a fluorine-containing interhalogen compound, comprising filling a treating agent for the fluorine component into the internal cylinder of a treating apparatus having a double cylinder structure consisting of an internal cylinder and an external cylinder, filling a treating agent for the halogen component into the external cylinder, feeding exhaust gas containing a fluorine-containing interhalogen compound into the internal cylinder to travel the internal cylinder and the external cylinder in this order, and then discharging the treated gas from the external cylinder.