Abstract: Disclosed herein is a display device including: a pixel array unit; and a driving unit; wherein said pixel array unit includes first scanning lines and second scanning lines in a form of rows, signal lines in a form of columns, and pixels in a form of a matrix, each pixel includes a drive transistor, a sampling transistor, a switching transistor, a retaining capacitance, and a light emitting element, said driving unit includes a write scanner for sequentially supplying a control signal to each first scanning line, a drive scanner for sequentially supplying a control signal to each second scanning line, and a signal selector for alternately supplying a signal potential as a video signal and a predetermined reference potential to each signal line.

Abstract: Disclosed herein is a display device including: a pixel array unit; and a driving unit; wherein the pixel array unit includes first scanning lines and second scanning lines in a form of rows, signal lines in a form of columns, and pixels in a form of a matrix, the pixels being disposed at parts where the first scanning lines and the signal lines intersect each other, each pixel includes a drive transistor of an N-channel type, a sampling transistor, a switching transistor, a retaining capacitance, and a light emitting element, the driving unit includes a write scanner for sequentially supplying a control signal to each first scanning line, a drive scanner for sequentially supplying a control signal to each second scanning line, and a signal selector for alternately supplying a signal potential as a video signal and a predetermined reference potential to each signal line.

Abstract: A light-emitting element includes an emitting unit and a driving circuit configured to drive the emitting unit. The driving circuit includes a driving transistor, an image signal writing transistor, and a capacitor unit. The driving circuit is connected to a current supply line and a scanning line both extending in a first direction and connected to a data line extending in a second direction. The current supply line and the scanning line are formed on the first interlayer insulating layer and the first interlayer insulating layer, the current supply line, and the scanning line are covered with a second interlayer insulating layer. The data line is formed on the second interlayer insulating layer. A shield wall extending in the first direction is provided to the second interlayer insulating layer between one light-emitting element and a light-emitting element adjacent to the one light-emitting element in the second direction.

Abstract: A display unit includes, on a substrate, a plurality of organic EL devices, and an insulating film provided in an inter-device region between the plurality of organic EL devices, the insulating film including a groove in a position between the organic EL devices adjacent to each other.

Abstract: Provided is a display device including a pixel array unit that is made by arranging a drive transistor to drive a light emitting unit, a sampling transistor to sample a signal voltage, and a pixel circuit having a storage capacitor to store the signal voltage which is written by sampling with the sampling transistor, and a drive unit that makes a gate node and a source node of the drive transistor be in a floating state up to performing writing of the signal voltage with the sampling transistor, after writing an initialization voltage in the gate node when the source node of the drive transistor is in a non-floating state.

Abstract: An SOI wafer according to the present invention includes a support substrate and an insulating layer formed on the support substrate, a predetermined cavity pattern being formed on one of main surfaces of the support substrate on which the insulating layer is provided, further includes an active semiconductor layer formed on the insulating layer with the cavity pattern being closed, the active semiconductor layer not being formed in an outer peripheral portion of the support substrate, and further includes a plurality of superposition mark patterns formed in the outer peripheral portion on the one of the main surfaces of the support substrate for specifying a position of the cavity pattern.

Abstract: A display apparatus includes: a pixel array section including a row of scanning lines, a column of signal lines, and pixels in a matrix, each of the pixels disposed at an intersection of both of the lines; and a drive section. The drive section performs line progressive scanning on the pixels. The pixel includes a light emitting device, a sampling transistor, a driving transistor, a switching transistor, and a holding capacitor. The sampling transistor samples a video signal in the holding capacitor, the driving transistor changes the device to a luminous state, the switching transistor becomes ON in advance of the sampling of the video signal to change the light emitting device to a non-luminous state, and the sampling transistor takes in the OFF voltage from the signal line to the driving transistor, thereby preventing a penetration current from flowing from the power source toward the fixed potential.

Abstract: A correction unit corrects parameters of an ensemble learner having a plurality of weak learners that receive characteristic amounts extracted from an input image and output weak hypotheses indicating whether or not a predetermined target is reflected in the input image using correction information. A discrimination processing unit integrates the weak hypotheses output from the weak learners with respect to the characteristic amounts using the ensemble learner of which the parameters are corrected and discriminates whether or not the target is reflected in the input image based on an integrated value of the weak hypotheses. The correction information is calculated based on a light source illuminating the target in a correction information calculation unit 54. The present technology may be applied, for example, to a case of discriminating whether or not the target is reflected in the input image, and so forth.

Abstract: A method of manufacturing a semiconductor device, includes the steps of forming a top surface nitride film on a top surface of a substrate and a bottom surface nitride film on a bottom surface of the substrate, forming a protective film on the top surface nitride film, removing the bottom surface nitride film by wet etching while the top surface nitride film is being protected by the protective film, removing the protective film after the removing of the bottom surface nitride film, patterning the top surface nitride film so as to form an opening in the top surface nitride film, and forming a second oxide film on the bottom surface of the substrate while forming a first oxide film on a surface portion of the substrate which is exposed by the opening.

Abstract: A display device includes: first dummy pixels including a self-emission element emitting first color light corresponding to emission colors of pixels in a display area; second dummy pixels including a self-emission element emitting the first color light and a self-emission element emitting second color light and causing both self-emission elements to emit light at the same time; a deterioration degree calculating unit calculating a deterioration degree in brightness of the self-emission element emitting the first color light on the basis of a brightness detection result of the first dummy pixels and calculating a deterioration degree in current flowing in the self-emission element emitting the first color light on the basis of brightness detection results of the first and second dummy pixels; and a correction unit correcting the brightness of effective pixels contributing to an image display on the basis of the deterioration degree in brightness and the deterioration degree in current calculated by the deteri

Abstract: A display device includes: a pixel array unit with pixel circuits disposed in matrix form, the pixel circuit including a driving transistor, an electro-optic element, a storage capacitor, and a sampling transistor, with the electro-optic element emitting light by generating a driving current based on information stored in the storage capacitor at the driving transistor to be applied to the electro-optic element; and a control unit, of which the output stage includes a buffer transistor, to output a pulse signal for driving the pixel array unit from the buffer transistor; wherein the pixel array unit and the control unit are formed with long laser beam irradiation to be scanned in the vertical direction or horizontal direction; and wherein with the control unit, the size of the buffer transistor is equal to or greater than the pixel pitch in the scanning direction of the laser beam.

Abstract: A display device includes a pixel array unit formed by disposing pixel circuits having a P-channel type drive transistor that drives a light-emitting unit, a sampling transistor that applies a signal voltage, a light emission control transistor that controls emission/non-emission of the light-emitting unit, a storage capacitor that is connected between a gate electrode and a source electrode of the drive transistor and an auxiliary capacitor that is connected to the source electrode, and a drive unit that, during threshold correction, respectively applies a first voltage and a second voltage to the source electrode of the drive transistor and the gate electrode thereof, the difference between the first voltage and the second voltage being less than a threshold voltage of the drive transistor, and subsequently performs driving that applies a standard voltage used in threshold correction to the gate electrode when the source electrode is in a floating state.

Abstract: A display device includes a pixel array unit that is formed by disposing pixel circuits that include a P-channel type drive transistor that drives a light-emitting unit, a sampling transistor that applies a signal voltage, a light emission control transistor that controls light emission and non-light emission of the light-emitting unit, a storage capacitor that is connected between a gate electrode and a source electrode of the drive transistor and an auxiliary capacitor, a first end of which is connected to the source electrode of the drive transistor, and a drive unit that, during threshold correction, applies a standard voltage that is used in threshold correction to the gate electrode of the drive transistor in a state in which the source electrode of the drive transistor has been set to a floating state, and subsequently applies a pulse signal to a second end of the auxiliary capacitor.

Abstract: A semiconductor device includes a substrate, a buried insulating film formed on the substrate, an SOI layer formed on the buried insulating film, an insulating film formed to extend from a top surface of the SOI layer to the buried insulating film and to divide the SOI layer into a first SOI layer and a second SOI layer isolated from the first SOI layer, an element formed in the first SOI layer, and an electrode having at one end thereof a pad located directly above the second SOI layer, the other end of the electrode being connected to the first SOI layer. A cavity region is formed between the buried insulating film and the substrate directly below the first SOI layer. The portion of the buried insulating film directly below the second SOI layer is at least partially in direct contact with the substrate.

Abstract: A display device includes: a pixel array unit with pixel circuits disposed in matrix form, the pixel circuit including a driving transistor, an electro-optic element, a storage-capacitor, and a sampling transistor, with the electro-optic element emitting light by generating a driving current based on information stored in the storage-capacitor at the driving transistor to be applied to the electro-optic element; and a control unit, of which the output stage includes a buffer transistor, to output a pulse signal for driving the pixel array unit from the buffer transistor; wherein the pixel array unit and the control unit are formed with long laser beam irradiation to be scanned in the vertical direction; and with the control unit, buffer transistors for outputting a pulse signal for sampling to an input video signal to each signal line are arrayed in a column in the longitudinal direction of the laser beam irradiation.

Abstract: Any one of a write scanning line, a power source supply line, and a video signal line is structured as a subsidiary wiring disposed in the same layer as that having a lower electrode disposed therein. The subsidiary wiring is used in the power source supply line through which a power source drive pulse to be pulse-driven is transmitted, or other wirings (such as the write scanning line and the video signal line).

Abstract: A pixel circuit includes a drive transistor that has a gate connected to an input node and a source connected to an output node. The drive transistor supplies a driving current to an electrooptic element via the output node. A sampling transistor is connected between the input node and a signal line and samples an input signal from the signal line, which is retained in a retaining capacitance connected to the input node. The magnitude of the driving current is based on a value of the retained signal. The pixel circuit further includes a compensating circuit which detects a decrease in the driving current attendant on a secular change of the drive transistor from a side of the output node and feeds back a result of the detection to a side of the input node to compensate for the decrease.

Abstract: The invention provides a pixel circuit that can cancel the influence of the mobility of a drive transistor. A drive transistor supplies a light-emitting element with an output current dependent upon an input voltage. The light-emitting element emits light with a luminance dependent upon a video signal in response to the output current supplied from the drive transistor. The pixel circuit includes a correction unit that corrects the input voltage held by a capacitive part in order to cancel the dependence of the output current on the carrier mobility.

Abstract: The invention provides a pixel circuit that can cancel the influence of the mobility of a drive transistor. A drive transistor supplies a light-emitting element with an output current dependent upon an input voltage. The light-emitting element emits light with a luminance dependent upon a video signal in response to the output current supplied from the drive transistor. The pixel circuit includes a correction unit that corrects the input voltage held by a capacitive part in order to cancel the dependence of the output current on the carrier mobility.

Abstract: Disclosed herein is a pixel circuit that includes a correcting section configured to correct the input voltage sampled in the pixel capacitance in order to cancel out the dependency of the output current on the carrier mobility. In the pixel circuit, the correcting section operates depending on the control signal supplied from the scanning line to extract the output current from the drive transistor and introduce the extracted output current into a capacitance of the light-emitting device and the pixel capacitance, thereby correcting the input voltage. The pixel circuit further includes an additional capacitance added to the capacitance of the light-emitting device. In the pixel circuit, a portion of the output current extracted from the drive transistor flows into the additional capacitance to give a time margin to operation of the correcting section.