Abstract: A solid junction-type photoelectric conversion element (10) including a first conductive layer (2), an electric power generation layer (4), and a second conductive layer (6), which are laminated in this order, wherein the electric power generation layer (4) comprises: a perovskite compound represented by a composition formula ABX3, formed of an organic cation A, a metal cation B and a halide anion X, and a compound Z having no perovskite structure.

Abstract: The present invention aims to provide a solar cell having high durability against deterioration due to moisture ingress from the side surfaces. The solar cell 10 of the present invention includes: first and second electrodes 12 and 17; a perovskite layer 14 provided between the first and second electrodes 12 and 17 and containing an organic-inorganic perovskite compound (A) represented by the formula RMX3 where R is an organic molecule, M is a metal atom, and X is a halogen atom; and a side-surface-protecting layer 15 provided on a peripheral side of the perovskite layer 14 to coat at least part of a side surface of the perovskite layer 14, the side-surface-protecting layer 15 containing at least one selected from the group consisting of a metal halide (B1) and an organometal halide (B2) or containing an organohalide (C).

Abstract: A solid junction-type photoelectric conversion element (10) including a first conductive layer (2), an electric power generation layer (4), and a second conductive layer (6), which are laminated in this order, wherein the electric power generation layer (4) comprises: a perovskite compound represented by a composition formula ABX3, formed of an organic cation A, a metal cation B and a halide anion X, and a compound Z having no perovskite structure.

Abstract: The present invention aims to provide a solar cell having high durability against deterioration due to moisture ingress from the side surfaces. The solar cell 10 of the present invention includes: first and second electrodes 12 and 17; a perovskite layer 14 provided between the first and second electrodes 12 and 17 and containing an organic-inorganic perovskite compound (A) represented by the formula RMX3 where R is an organic molecule, M is a metal atom, and X is a halogen atom; and a side-surface-protecting layer 15 provided on a peripheral side of the perovskite layer 14 to coat at least part of a side surface of the perovskite layer 14, the side-surface-protecting layer 15 containing at least one selected from the group consisting of a metal halide (B1) and an organometal halide (B2) or containing an organohalide (C).

Abstract: The present invention provides a solid junction photoelectric conversion element module including a first photoelectric conversion element, a second photoelectric conversion element, a connection portion, and a base material. The first photoelectric conversion element and the second photoelectric conversion element are disposed adjacently to each other on a surface of the base material. The first photoelectric conversion element sequentially includes a first conductive layer, a power generation layer including a perovskite layer, and a second conductive layer, and the first conductive layer of the first photoelectric conversion element is in contact with the base material. The second photoelectric conversion element sequentially includes a first conductive layer, a power generation layer including a perovskite layer, and a second conductive layer, and the first conductive layer of the second photoelectric conversion element is in contact with the base material.

Abstract: A solid junction-type photovoltaic device including: a substrate; a first conductive layer; a power generation layer including a perovskite layer; and a conductive material including a second conductive layer, which are laminated in this order, wherein the conductive material has a self-supporting property.

Abstract: In a plasma film forming apparatus, two first electrodes 51 connected to a power source 4 and two grounded second electrodes 52 are arranged in the order of the second electrode 52, the first electrode 51, the first electrode 51 and the second electrode 52. A first flow passage 50a formed between the central first electrodes 51 allows a raw material gas (first gas) for being formed into a film to pass therethrough. A plasma discharge space 50b of a second flow passage formed between the first and second electrodes 51, 52 on the both sides allows an excitable gas (second gas) to pass therethrough, which excitable gas is exited by plasma such that the raw material can be formed into a film, but that the excitable gas itself is merely excited but not formed into a film. Those gases are converged at a crossing part 20c between the first and second flow passages and blown off via a common blowoff passage 25a.

Abstract: [PROBLEM TO BE SOLVED]In a surface processing apparatus for spraying a processing gas onto the surface of an object to be processed through a hole-row such as a slit, the surface of the object having a large area can effectively be processed even if the hole-row is short. [MEANS FOR SOLVING] A plurality of electrode plates 11, 12 are arranged, in side-by-side relation, on a processor 1 of a plasma surface processing apparatus M. A slit-like hole-row 10a is formed between the adjacent electrode plates, and a hole-row group 100 is constituted by the side-by-side arranged hole-rows 10a. The object W is moved along the extending direction of each slit 10a by a moving mechanism 4.

Abstract: In a plasma film forming apparatus, two first electrodes 51 connected to a power source 4 and two grounded second electrodes 52 are arranged in the order of the second electrode 52, the first electrode 51, the first electrode 51 and the second electrode 52. A first flow passage 50a formed between the central first electrodes 51 allows a raw material gas (first gas) for being formed into a film to pass therethrough. A plasma discharge space 50b of a second flow passage formed between the first and second electrodes 51, 52 on the both sides allows an excitable gas (second gas) to pass therethrough, which excitable gas is exited by plasma such that the raw material can be formed into a film, but that the excitable gas itself is merely excited but not formed into a film. Those gases are converged at a crossing part 20c between the first and second flow passages and blown off via a common blowoff passage 25a.

Abstract: In a plasma film forming apparatus, two first electrodes 51 connected to a power source 4 and two grounded second electrodes 52 are arranged in the order of the second electrode 52, the first electrode 51, the first electrode 51 and the second electrode 52. A first flow passage 50a formed between the central first electrodes 51 allows a raw material gas (first gas) for being formed into a film to pass therethrough. A plasma discharge space 50b of a second flow passage formed between the first and second electrodes 51, 52 on the both sides allows an excitable gas (second gas) to pass therethrough, which excitable gas is exited by plasma such that the raw material can be formed into a film, but that the excitable gas itself is merely excited but not formed into a film. Those gases are converged at a crossing part 20c between the first and second flow passages and blown off via a common blowoff passage 25a.