Abstract: The present technology relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic apparatus, the solid-state imaging device being capable of expanding the dynamic range without deteriorating the image quality. The solid-state imaging device includes a pixel array section having a plurality of unit pixels and a drive section. Each of the unit pixels includes a first photoelectric conversion section, a second photoelectric conversion section which is less sensitive than the first photoelectric conversion section, a charge storage section configured to store charges generated by the second photoelectric conversion section, a charge-voltage conversion section, a first transfer gate section configured to transfer charges from the first photoelectric conversion section, and a second transfer gate section configured to combine the potential of the charge-voltage conversion section with the potential of the charge storage section.

Abstract: The present technology relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic apparatus, the solid-state imaging device being capable of expanding the dynamic range without deteriorating the image quality. The solid-state imaging device includes a pixel array section having a plurality of unit pixels and a drive section. Each of the unit pixels includes a first photoelectric conversion section, a second photoelectric conversion section which is less sensitive than the first photoelectric conversion section, a charge storage section configured to store charges generated by the second photoelectric conversion section, a charge-voltage conversion section, a first transfer gate section configured to transfer charges from the first photoelectric conversion section, and a second transfer gate section configured to combine the potential of the charge-voltage conversion section with the potential of the charge storage section.

Abstract: A solid state image sensor includes a pixel unit and a readout unit that reads out per-pixel pixel signals from the pixel unit. The readout unit includes: a plurality of column-parallel comparators that compare a readout signal potential to a reference voltage and output a determination signal; and a plurality of counters that count the comparing time of a corresponding comparator. Each comparator includes: a first amp containing a differential amplifier that receives the reference voltage at the gate of a transistor, receives the readout signal at the gate of another transistor, and compares the reference voltage to the readout signal potential; a second amp containing an amplifier that increases the gain of the first amp's output; and a capacitor connected between the input and the output of the amplifier in the second amp in order to exhibit the Miller effect.