Abstract: A semiconductor light emitter includes a substrate, a semiconductor multilayer structure including a light emission unit that emits light in an oblique direction with respect to the substrate, a base on which the substrate is disposed, a holding member that holds the substrate at an angle set in advance with respect to the base, a temperature control unit disposed parallel to the substrate to adjust a temperature of the substrate, and a shaping optical system held against the substrate to shape a luminous flux emitted from the semiconductor multilayer structure.

Abstract: A semiconductor light emitter includes a substrate, a semiconductor multilayer structure including a light emission unit that emits light in an oblique direction with respect to the substrate in an emission region in a longitudinal direction and a lateral direction orthogonal to the longitudinal direction, and a shaping optical system that shapes a luminous flux emitted from the light emission unit, in which a lens closest to the light emission unit in the shaping optical system is a cylindrical lens having positive power in the lateral direction, a front major plane of the cylindrical lens is parallel to the light emission unit and a generatrix direction of the cylindrical lens is parallel to the longitudinal direction, and the following conditional equation (1) is satisfied in a case where a distance from the light emission unit to a light incident surface of the cylindrical lens is D, a distance from the light incident surface to the front major plane of the cylindrical lens is HA, and a focal length of th

Abstract: A light-emitting component includes a substrate, plural light-emitting elements that are disposed on the substrate and emit light in a direction intersecting with a surface of the substrate, and a gate electrode that is electrically connected to each of the plural light-emitting elements and performs control so that the plural light-emitting elements are switched ON/OFF together. Plural holes are disposed around each of the plural light-emitting elements.

Abstract: A light-emitting component includes a substrate and plural light-emitting elements that are disposed on the substrate and emit light in a direction intersecting with a surface of the substrate and that are switched ON/OFF together. The plural light-emitting elements include a gate layer, the gate layer performing control so that the plural light-emitting elements are switched ON/OFF together, a film thickness of the gate layer being greater than a wavelength of light emitted from the plural light-emitting elements.

Abstract: A light-emitting component includes a substrate, plural light-emitting elements that are disposed on the substrate and emit light in a direction intersecting with a surface of the substrate, and a gate electrode that is electrically connected to each of the plural light-emitting elements and that performs control so that the plural light-emitting elements are switched ON/OFF together. A distance between each of the plural light-emitting elements and the gate electrode is smaller than a largest distance between two light-emitting elements among the plural light-emitting elements.

Abstract: A light-emitting device includes: a substrate; a light-emitting unit including plural light-emitting elements; a transfer unit configured to output a signal that controls a light-emitting state of the light-emitting elements; and an electrode unit configured to input and output a signal that drives the transfer unit, the substrate has a rectangular shape having a long side and a short side, and the electrode unit is disposed along the short side of the substrate with the transfer unit interposed between a part of the electrode unit and other part of the electrode unit.

Abstract: A semiconductor optical amplifier includes: a substrate; a light source unit that is formed on the substrate; and an optical amplification unit that includes a conductive region extending, from the light source unit, in a predetermined direction along a surface of the substrate, and a nonconductive region around the conductive region. The optical amplification unit amplifies propagation light that propagates, from the light source unit, in the predetermined direction as slow light, and emits the propagation light that is amplified in an emission direction that intersects with the surface. The maximum optical power of the propagation light is larger than the maximum optical power in a vertical oscillation mode.

Abstract: A semiconductor optical amplifier includes: a light source part that is formed on a substrate, the substrate including a substrate surface; and an optical amplification part that amplifies propagation light propagating in a predetermined direction from the light source part and that emits the propagation light amplified in an emission direction intersecting with the substrate surface, the optical amplification part including a conductive region extending in the predetermined direction from the light source part along the substrate surface and a non-conductive region formed on a periphery of the conductive region, the conductive region including a reflection part that reflects the propagation light in a direction intersecting with the predetermined direction when viewed from a direction vertical to the substrate surface.

Abstract: A light emitting element array includes a single semiconductor substrate, a plurality of semiconductor elements, which are formed on the single semiconductor substrate, and each of the semiconductor elements including a first distributed Bragg-reflector, an active layer formed over the first distributed Bragg-reflector, and a second distributed Bragg-reflector formed over the active layer. The array includes an electrode pad formed over the second distributed Bragg-reflector and a wiring formed at least partly over the second distributed Bragg-reflector and extending from the electrode pad toward the semiconductor elements. The semiconductor elements include a first semiconductor element, configured to emit laser light, and a second semiconductor element configured not to emit laser light and disposed at a position which is shorter distance along the wiring from the electrode pad than a distance along the wiring from the electrode pad to a position of the first semiconductor element.

Abstract: A light-emitting device is provided with a light source and a controller. The light source includes multiple light-emitting elements and multiple driving elements that are provided in correspondence with the light-emitting elements and drive the light-emitting elements to light up by going to an ON state. The controller controls a switching between a successive lighting operation that causes the light-emitting elements to light up successively and a simultaneous lighting operation that causes the light-emitting elements to light up simultaneously in parallel. The light source includes a power supply line set to a reference potential or a power supply potential, a driving signal line that is connected to the power supply line and that supplies a driving signal to the driving elements, and a lighting signal line that supplies a lighting signal for causing the light-emitting elements to light up.

Abstract: An optical semiconductor element includes: a semiconductor substrate that is semi-insulating; a columnar body that is formed on a front surface-side of the semiconductor substrate and configured to emit or receive light from the front surface-side; a front surface-side electrode that is connected to the columnar body; a back surface-side electrode formed on a back surface-side of the semiconductor substrate; and an electrically conductive member that is formed to penetrate through the semiconductor substrate to connect the front surface-electrode and the back surface-side electrode, and has a protruding portion protruding on the front surface-side of the semiconductor substrate.

Abstract: A semiconductor optical amplifier includes: a substrate; a light source unit formed on the substrate; and an optical amplification part that amplifies light propagating in a predetermined direction from the light source unit and emits the amplified light in an emission direction intersecting with the substrate surface. The optical amplification part includes a conductive region extending in the predetermined direction along the substrate surface from the light source unit, and a nonconductive region formed around the conductive region. The conductive region includes a first region extending from the light source unit and having a predetermined width as seen from a direction perpendicular to the substrate surface, and a second region connected to the first region and having a width widened relative to the predetermined width of the first region, the second region being configured to expand the propagation light in a direction intersecting with the predetermined direction.

Abstract: A semiconductor optical amplifier includes: a substrate; a light source unit that is formed on the substrate; and an optical amplification unit that includes a conductive region extending, from the light source unit, in a predetermined direction along a surface of the substrate, and a nonconductive region around the conductive region. The optical amplification unit amplifies propagation light that propagates, from the light source unit, in the predetermined direction as slow light, and emits the propagation light that is amplified in an emission direction that intersects with the surface. The maximum optical power of the propagation light is larger than the maximum optical power in a vertical oscillation mode.

Abstract: A semiconductor optical amplifier includes a conductive region that is provided on a substrate and allows light transmission, and a nonconductive region that is provided around the conductive region and prohibits light transmission. The conductive region includes a first region including a light-coupling portion to which light from an external light-source unit is coupled, and a second region having a narrower width than the first region and connected to the first region through a connecting portion, the second region including a light-amplifying portion amplifying the light from the light-coupling portion by propagating the light in a predetermined propagating direction along a surface of the substrate, the light-amplifying portion outputting the amplified light in a direction intersecting the surface of the substrate.

Abstract: A semiconductor optical amplifier includes: a light source part that is formed on a substrate, the substrate including a substrate surface; and an optical amplification part that amplifies propagation light propagating in a predetermined direction from the light source part and that emits the propagation light amplified in an emission direction intersecting with the substrate surface, the optical amplification part including a conductive region extending in the predetermined direction from the light source part along the substrate surface and a non-conductive region formed on a periphery of the conductive region, the conductive region including a reflection part that reflects the propagation light in a direction intersecting with the predetermined direction when viewed from a direction vertical to the substrate surface.

Abstract: A light emitting element array includes a single semiconductor substrate, a plurality of semiconductor elements, which are formed on the single semiconductor substrate, and each of the semiconductor elements including a first distributed Bragg-reflector, an active layer formed over the first distributed Bragg-reflector, and a second distributed Bragg-reflector formed over the active layer. The array includes an electrode pad formed over the second distributed Bragg-reflector and a wiring formed at least partly over the second distributed Bragg-reflector and extending from the electrode pad toward the semiconductor elements. The semiconductor elements include a first semiconductor element, configured to emit laser light, and a second semiconductor element configured not to emit laser light and disposed at a position which is shorter distance along the wiring from the electrode pad than a distance along the wiring from the electrode pad to a position of the first semiconductor element.

Abstract: An optical transmission device includes a first light emitting element, a second light emitting element, and a detection unit. The first light emitting element is configured to emit light. The second light emitting element is configured to emit light. The second light emitting element is connected in parallel with the first light emitting element and is configured to deteriorate earlier than the first light emitting element. The detection unit is configured to detect whether the second light emitting element is deteriorated.

Abstract: A light irradiation device includes a light emitting unit, a cooling unit, a supply unit, and a driving unit. The light emitting unit emits light while generating heat. The cooling unit includes a channel through which a coolant flows, a first surface on which the light emitting unit is mounted, and a second surface that faces a direction opposite to the first surface. The supply unit is disposed facing the second surface in one direction that the second surface faces and supplies the coolant to the cooling unit. The driving unit is disposed facing the second surface in the one direction and includes a driving board that drives the light emitting unit.

Abstract: A light emitting element array includes plural light emitting elements connected in parallel to each other by a wiring connected to a terminal that supplies a current. Each of the light emitting elements is disposed at a position of a predetermined path length along a path of the current flowing from the terminal through the wiring. The plural light emitting elements include, in a mixed form, one or more first light emitting elements each having a non-shielded light emission aperture and one or more second light emitting elements each having a shielded light emission aperture. At least one of the first light emitting elements is disposed at a position of the longest path length. At least one of the second light emitting elements is disposed at a position of the shortest path length.

Abstract: A light emitting element includes: a semiconductor stack structure that includes a light emitting part, and a light receiving part that receives light propagating in a lateral direction through a semiconductor layer from the light emitting part, wherein the light emitting part and the light receiving part share a quantum layer; and a light reflection layer that covers ? or more of a lateral surface of the quantum layer in the light receiving part.