Patents by Inventor Junichiro Kanbe

Junichiro Kanbe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4529679
    Abstract: A photoconductive member comprises a substrate and a light receiving layer having photoconductive provided on said support, comprising silicon atoms as a matrix and at least halogen atoms as constituent atoms said light receiving layer having a depth profile with respect to the layer thickness direction such that the concentration of halogen atoms contained therein is increased from the said substrate side toward the surface side of the photoconductive member.
    Type: Grant
    Filed: December 22, 1983
    Date of Patent: July 16, 1985
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kyosuke Ogawa, Shigeru Shirai, Keishi Saitoh, Teruo Misumi, Junichiro Kanbe
  • Patent number: 4525442
    Abstract: A photoconductive member comprises a photoconductive layer constituted of an amorphous material containing at least one of hydrogen atoms and halogen atoms in a matrix of silicon atoms and an amorphous layer constituted of an amorphous material containing at least one of hydrogen atoms and halogen atoms in a matrix of boron atoms.
    Type: Grant
    Filed: July 16, 1984
    Date of Patent: June 25, 1985
    Assignee: Canon Kabushiki Kaisha
    Inventors: Shigeru Shirai, Junichiro Kanbe, Tadaji Fukuda
  • Patent number: 4522905
    Abstract: A photoconductive member comprises a support for photoconductive member, an interface layer constituted of an amorphous material containing at least silicon atoms and nitrogen atoms as constituent atoms, a rectifying layer comprising an amorphous material containing atoms (A) belonging to the group III or the group V of the periodic table as constituent atoms in a matrix of silicon atoms and an amorphous layer exhibiting photoconductivity constituted of an amorphous material containing at least one of hydrogen atoms or halogen atoms as constituent atoms in a matrix of silicon atoms, said rectifying layer having a layer thickness t which from 30 .ANG. up to, but not reaching, 0.3.mu. and the content C(A) of the aforesaid atoms contained in the rectifying layer being 30 atomic ppm or more, or said t being 30 .ANG. or more and said C(A) being from 30 atomic ppm up to, but not reaching, 100 atomic ppm.
    Type: Grant
    Filed: February 1, 1983
    Date of Patent: June 11, 1985
    Inventors: Kyosuke Ogawa, Shigeru Shirai, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato, Teruo Misumi
  • Patent number: 4511239
    Abstract: A developing device including a magnet, a non-magnetic sleeve for supporting magnetic developer and a magnetic blade for forming a layer of magnetic developer on the surface of the sleeve in successive order and in mutually separated manner. Assuming the half-peak width of the principal pole of said magnet is 2l, the relative position .theta. of the magnetic blade with respect to the center line of the magnetic pole is selected within a range .theta..ltoreq.l in the moving direction of the sleeve and within a smaller range in the opposite direction. Further, the relative position .theta. is rendered adjustable in order to regulate the developing density.
    Type: Grant
    Filed: August 29, 1984
    Date of Patent: April 16, 1985
    Assignee: Canon Kabushiki Kaisha
    Inventors: Junichiro Kanbe, Nagao Hosono
  • Patent number: 4501807
    Abstract: A photoconductive member comprising a support for photoconductive member and an amorphous layer exhibiting photoconductivity comprising an amorphous material containing silicon atoms as a matrix is characterized in that said amorphous layer has a first layer region containing, as constituent atoms, oxygen atoms in a distribution which is nonuniform and continuous in the direction of the layer thickness and a second layer region containing, as constituent atoms, the atoms (A) belonging to group III or group V of the periodic table in a distribution which is continuous in the direction of the layer thickness, said second layer existing internally beneath the surface of said amorphous layer.
    Type: Grant
    Filed: March 8, 1983
    Date of Patent: February 26, 1985
    Assignee: Canon Kabushiki Kaisha
    Inventors: Shigeru Shirai, Kyosuke Ogawa, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato, Teruo Misumi
  • Patent number: 4490454
    Abstract: A photoconductive member comprises a support for photoconductive member and an amorphous layer comprising an amorphous material containing silicon atoms as a matrix and exhibiting photoconductivity, said amorphous layer having a first layer region containing, as constituent atoms, oxygen atoms and a second layer region containing, as constituent atoms, the atoms belonging to the group V of the periodic table in a distribution which is continuous in the direction of the layer thickness and more enriched toward the side of said support.
    Type: Grant
    Filed: March 14, 1983
    Date of Patent: December 25, 1984
    Assignee: Canon Kabushiki Kaisha
    Inventors: Teruo Misumi, Kyosuke Ogawa, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato, Shigeru Shirai
  • Patent number: 4490453
    Abstract: A photoconductive member, comprises a support for a photoconductive member and an amorphous layer which is constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photoconductivity, said amorphous layer having a layer region containing nitrogen atoms in at least a part thereof, the content of the nitrogen atoms in said layer region being distributed unevenly in the direction of the thickness of said layer.
    Type: Grant
    Filed: December 29, 1981
    Date of Patent: December 25, 1984
    Assignee: Canon Kabushiki Kaisha
    Inventors: Shigeru Shirai, Junichiro Kanbe, Tadaji Fukuda
  • Patent number: 4486521
    Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer containing an amorphous material comprising silicon atom as a matrix and having photoconductivity, said amorphous layer comprising a first layer region containing oxygen atom as a constituent atom, the oxygen atom being distributed continuously in the direction of the layer thickness and enriched at the support side, and a second layer region containing an atom of the group III of the periodic table as a constituent atom, said first layer region being internally present at the support side in the amorphous layer, and the layer thickness T.sub.B of said second layer region and a layer thickness T resulted from subtracting T.sub.B from the layer thickness of the amorphous layer satisfying the relation, T.sub.B /T.ltoreq.1.
    Type: Grant
    Filed: March 14, 1983
    Date of Patent: December 4, 1984
    Assignee: Canon Kabushiki Kaisha
    Inventors: Teruo Misumi, Kyosuke Ogawa, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato, Shigeru Shirai
  • Patent number: 4483911
    Abstract: A photoconductive member comprises a support and an amorphous layer comprising a first layer region and a second layer region, the first layer region having photoconductivity comprising an amorphous material which comprises silicon atoms as a matrix and at least one member selected from hydrogen atoms and halogen atoms as a constituent, the first layer region having a layer region (I) containing an impurity controlling the electroconductivity type at the support side, and the second layer region comprising an amorphous material comprising at least both silicon and carbon as constituents.
    Type: Grant
    Filed: December 17, 1982
    Date of Patent: November 20, 1984
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kyosuke Ogawa, Shigeru Shirai, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato
  • Patent number: 4473627
    Abstract: This specification discloses a method of toner transfer development in which a low frequency alternating electrical bias is applied to the space between a latent image bearing member and a developer carrying member to develop the latent image on the latent image bearing member, and an apparatus for carrying out the same method. This bias has a first stage in which one-sided movement of developer particles from the developer carrying member to the image area of the latent image bearing member may take place, a second stage in which reciprocal movement of developer particles is effected between both the image and non-image areas of the latent image bearing member and the developer carrying member, and a third stage in which the intensity of the bias is reduced so that one-sided movement of developer particles from the developer carrying member to the image area and one-sided movement of developer particles from the non-image area to the developer carrying member may take place.
    Type: Grant
    Filed: September 29, 1982
    Date of Patent: September 25, 1984
    Assignee: Canon Kabushiki Kaisha
    Inventors: Junichiro Kanbe, Tsutomu Toyono, Nagao Hosono, Tohru Takahashi
  • Patent number: 4471694
    Abstract: A printing process comprise formation of fixed toner images on a photoconductive substrate by using an electrophotographic method, selective application of color materials onto the image portions of the fixed toner images, and printing of said color material applied onto the fixed toner image to a transfer sheet characterized by removing said fixed toner images from the used photoconductive substrate, forming other toner images on the photoconductive substrate thus reclaimed by using an electrophotographic method, application of color materials onto said other toner images, and printing of said color material applied onto the other fixed toner image to a transfer sheet.
    Type: Grant
    Filed: August 10, 1983
    Date of Patent: September 18, 1984
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yoshio Takasu, Tadaji Fukuda, Junichiro Kanbe
  • Patent number: 4472492
    Abstract: A method for fabricating an electrophotographic image forming member, wherein the first photoconductive layer consisting of an amorphous inorganic semiconductive material is formed on a substrate suited for the electrophotographic process, then the second photoconductive layer, which is different from the first photoconductive layer and consists of amorphous silicon containing therein silicon as the matrix and at least one of hydrogen and halogen atoms, is formed on the first photoconductive layer, and thereafter, the second photoconductive layer is annealed by irradiating a laser beam on the surface of the second photoconductive layer.
    Type: Grant
    Filed: July 8, 1983
    Date of Patent: September 18, 1984
    Assignee: Canon Kabushiki Kaisha
    Inventors: Junichiro Kanbe, Tadaji Fukuda, Toru Takahashi
  • Patent number: 4468443
    Abstract: A process for producing a photoconductive member, which comprises forming a photoconductive layer on a substrate for formation of a photoconductive layer by introducing starting substances for formation of a photoconductive layer under gaseous state into a deposition chamber maintained under a desired reduced pressure and exciting discharging under the gas atmosphere of said starting substances is characterized in that said starting substances are constituted of at least one substance selected from the first group consisting of substances(O) containing oxygen atoms as constituent atom, substances(N) containing nitrogen atoms as constituent atom and substances(C) containing carbon atoms as constituent atom, and at least two compounds selected from the second group consisting of the compounds of the formula:Si.sub.n H.sub.2n+2 (A)wherein n is a positive integer and the compounds of the formula:Si.sub.m H.sub.l X.sub.
    Type: Grant
    Filed: March 4, 1982
    Date of Patent: August 28, 1984
    Assignee: Canon Kabushiki Kaisha
    Inventors: Isamu Shimizu, Kyosuke Ogawa, Eiichi Inoue, Junichiro Kanbe
  • Patent number: 4465750
    Abstract: A photoconductive member comprises a support and an amorphous layer compsed of a first layer region composed of a photoconductive amorphous silicon containing p- or n-type impurity distributed nonuniformly and continuously in the layer thickness direction, and a second layer region composed of Si.sub.a C.sub.1-a (0.4<a<1), [Si.sub.b C.sub.1-b ].sub.c H.sub.1-c (0.5<b<1, 0.6.ltoreq.c<1), [Si.sub.d C.sub.1-d ].sub.e X.sub.1-e (0.47<d<1, 0.8.ltoreq.e<1, X: halogen) or [Si.sub.f C.sub.1-f ].sub.g (H+X).sub.1-g (0.47<f<1, 0.8.ltoreq.g<1, X: halogen].
    Type: Grant
    Filed: December 13, 1982
    Date of Patent: August 14, 1984
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kyosuke Ogawa, Shigeru Shirai, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato
  • Patent number: 4464451
    Abstract: An electrophotographic image-forming member comprises a substrate for electrophotography and an amorphous layer which is laid on said substrate and constituted of silicon atoms as matrix containing at least one of hydrogen atom and halogen atom and exhibits photoconductivity, said substrate being constituted of aluminum oxide containing chemi-structurally water at least on the surface thereof, and said amorphous layer having a layer region containing at least one member selected from the group consisting of oxygen atom, nitrogen atom and carbon atom in at least a part thereof, the content of said member in said layer region being distributed unevenly in the direction of the thickness of said layer.
    Type: Grant
    Filed: January 29, 1982
    Date of Patent: August 7, 1984
    Assignee: Canon Kabushiki Kaisha
    Inventors: Shigeru Shirai, Junichiro Kanbe, Tadaji Fukuda
  • Patent number: 4461820
    Abstract: An electrophotographic image-forming member comprises (1) a substrate for electrophotography which has a surface coating of an aluminum oxide containing water chemi-structurally and (2) a photoconductive layer which is laid on said surface coating of the substrate and constituted of an amorphous material containing at least one of hydrogen atom and halogen atom in a matrix of silicon atom, said photoconductive layer containing at least one of oyxgen atom, nitrogen atom, and carbon atom.
    Type: Grant
    Filed: February 1, 1982
    Date of Patent: July 24, 1984
    Assignee: Canon Kabushiki Kaisha
    Inventors: Shigeru Shirai, Junichiro Kanbe, Tadaji Fukuda
  • Patent number: 4460669
    Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity constituted of an amorphous material comprising silicon atoms as a matrix, said amorphous layer having a first layer region containing as the constituent atom at least one kind of atoms selected from the group consisting of oxygen atoms, carbon atoms and nitrogen atoms in a distribution state which is ununiform and continuous in the direction of layer thickness and a second layer region containing atoms belonging to the group III of the periodic table as constituent atoms in a distribution state which is ununiform and continuous in the direction of layer thickness, said first layer region existing internally below the surface of said amorphous layer.
    Type: Grant
    Filed: November 22, 1982
    Date of Patent: July 17, 1984
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kyosuke Ogawa, Shigeru Shirai, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato
  • Patent number: 4460670
    Abstract: A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity constituted of an amorphous material comprising silicon atoms as a matrix, said amorphous layer having a first layer region containing at least one kind of atoms selected from the group consisting of oxygen atoms, carbon atoms and nitrogen atoms as constituent atoms in a distribution which is ununiform and continuous in the direction of layer thickness and a second layer region containing atoms of an element belonging to the group III of the periodic table as constituent atoms in a distribution which is ununiform and continuous in the direction of layer thickness.
    Type: Grant
    Filed: November 19, 1982
    Date of Patent: July 17, 1984
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kyosuke Ogawa, Shigeru Shirai, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato
  • Patent number: 4452875
    Abstract: A photoconductive member comprises a support for a photoconductive member, an interface layer comprising an amorphous material containing silicon atoms and nitrogen atoms as constituent atoms, a rectifying layer comprising an amorphous material containing atoms (A) belonging to the group III or the group V of the periodic table as constituent atoms in a matrix of silicon atoms, a first amorphous layer exhibiting photoconductivity and comprising an amorphous material containing at least one member selected from the group consisting of hydrogen atoms and halogen atoms as constituent atoms in a matrix of silicon atoms, and a second amorphous layer containing an amorphous material represented by any of the formulas:Si.sub.a C.sub.1-a (0.4<a<1) . . . (1)(Si.sub.b C.sub.1-b).sub.c H.sub.1-c (0.5<b<1, 0.6 .ltoreq.c<1) . . . (2)(Si.sub.d C.sub.1-d).sub.e X.sub.1-e (0.47<d<1, 0.8.ltoreq.e<1) . . . (3)(Si.sub.f C.sub.1-f).sub.g (H+X).sub.1-g (0.47<f<1, 0.8.ltoreq.g<1) . . .
    Type: Grant
    Filed: February 8, 1983
    Date of Patent: June 5, 1984
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kyosuke Ogawa, Shigeru Shirai, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato, Teruo Misumi
  • Patent number: 4452874
    Abstract: A photoconductive member comprises a support for photoconductive member, an interface layer comprising an amorphous material represented by any of the formulas:Si.sub.a N.sub.1-a (0.57<a<1) (1)(Si.sub.b N.sub.1-b).sub.c H.sub.1-c (0.6<b<1, 0.65.ltoreq.c<1) (2)(Si.sub.d N.sub.1-d).sub.e (X, H).sub.1-e (0.6<d<1, 0.8.ltoreq.e<1) (3)(wherein X represents a halogen atom),a rectifying layer comprising an amorphous material containing atoms (A) belonging to the group III or the group V of the periodic table as constituent atoms in a matrix of silicon atoms, and an amorphous layer exhibiting photoconductivity comprising an amorphous material containing at least one of hydrogen atoms and halogen atoms as constituent atoms in a matrix of silicon atoms.
    Type: Grant
    Filed: February 1, 1983
    Date of Patent: June 5, 1984
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kyosuke Ogawa, Shigeru Shirai, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato, Teruo Misumi