Abstract: A semiconductor packaging container allowing to use in millimeter band is provided at a low cost. The inner SIG pads and the inner GND pads, capable of a direct connection with a signal terminal of a semiconductor chip 10 are provided on the bottomed cylindrical dielectric case formed of the liquid crystal polymer. Further, the external SIG pads integrally formed with the inner SIG pads 201, 202 and the external GND pad 303 integrally formed with the inner GND pad are provided on the back of the bottom surface of the dielectric case as the external terminal. The inner GND pads and are to form the coplanar waveguide with the inner SIG pads and. Also, the inner GND pads and are to add capacitive reactance for canceling the inductance caused by the space at the semiconductor chip portion to the coplanar waveguide.

Abstract: A semiconductor packaging container allowing to use in millimeter band is provided at a low cost. The inner SIG pads and the inner GND pads, capable of a direct connection with a signal terminal of a semiconductor chip 10 are provided on the bottomed cylindrical dielectric case formed of the liquid crystal polymer. Further, the external SIG pads integrally formed with the inner SIG pads 201, 202 and the external GND pad 303 integrally formed with the inner GND pad are provided on the back of the bottom surface of the dielectric case as the external terminal. The inner GND pads and are to form the coplanar waveguide with the inner SIG pads and. Also, the inner GND pads and are to add capacitive reactance for canceling the inductance caused by the space at the semiconductor chip portion to the coplanar waveguide.

Abstract: At least a channel layer and an etching stopper layer are provided on a semiconductor substrate in order, a gate electrode that Schottky-contacts the etching stopper layer is provided on the etching stopper layer, and InGaP having an In composition ratio of 0.66 through 0.9 is used as the etching stopper layer in a field effect type compound semiconductor device.

Abstract: A semiconductor integrated circuit device includes a semiconductor layer on a substrate, a first gate electrode formed on the semiconductor layer, and a second gate electrode that is formed on the semiconductor layer and is adjacent to a sidewall of the first gate electrode along a channel length. The first and second gate electrodes have different work functions.

Abstract: At least a channel layer and an etching stopper layer are provided on a semiconductor substrate in order, a gate electrode that Schottky-contacts the etching stopper layer is provided on the etching stopper layer, and InGaP having an In composition ratio of 0.66 through 0.9 is used as the etching stopper layer in a field effect type compound semiconductor device.

Abstract: The impurity concentration contained in a layer on an electron supply layer of a high electron mobility field effect transistor is set in the range of 1˜1016 to 1˜1017 atoms/cm3, or the bandgap of a Schottky layer is set wider than that of the electron supply layer. Otherwise, in the steps of manufacturing the high electron mobility field effect transistor, after a silicon nitride film has been formed on a GaAs buried layer in which a second recess is formed and in a region on the inside of a first recess formed in a GaAs contact layer, the GaAs buried layer is still heated.

Abstract: The impurity concentration contained in a layer on an electron supply layer of a high electron mobility field effect transistor is set in the range of 1×1016 to 1×1017 atoms/cm3, or the bandgap of a Schottky layer is set wider than that of the electron supply layer. Otherwise, in the steps of manufacturing the high electron mobility field effect transistor, after a silicon nitride film has been formed on a GaAs buried layer in which a second recess is formed and in a region on the inside of a first recess formed in a GaAs contact layer, the GaAs buried layer is still heated.

Abstract: The impurity concentration contained in a layer on an electron supply layer of a high electron mobility field effect transistor is set in the range of 1×1016 to 1×1017 atoms/cm3, or the bandgap of a Schottky layer is set wider than that of the electron supply layer.