Abstract: It is an objective that the optical loss and the number of optical components are reduced in an optical recording head using a near-field where a laser beam is guided from a light source to the tip of the head and a thermally assisted magnetic recording head. A structure where the traveling direction of emitted beam is rotated in the direction of the cavity of the laser diode element and a reflector for guiding the beam to the surface of the surface of the laser diode element is monolithically integrated in the laser diode element is mounted over the slider so that the direction of the cavity of the laser diode element is parallel to the surface of the recording medium, and the substrate side of the laser diode element is mounted to be in the direction opposite the face adjacent to the upper face of the slider.

Abstract: In a horizontal-cavity vertical-emitting semiconductor laser including an Al-containing semiconductor layer, deterioration of light output property due to oxidization of the Al-containing semiconductor layer is suppressed. A lower cladding layer, an active layer, and an upper cladding layer are stacked in this order from the lower layer on a main surface of a substrate made of GaAs. The upper cladding layer is made of AlGaAs or AlGaInP containing Al in high concentration. An emitting plane layer combining a function of preventing the oxidization of Al contained in the upper cladding layer is formed on an upper portion of the upper cladding layer, and an electric contact layer is formed on an upper portion of the emitting plane layer. The emitting plane layer is made of InGaP, and the electric contact layer is made of GaAs.

Abstract: An optical device integrated head having high light utilizing efficiency by decreasing the propagation loss caused from an optical source to a recording medium, conducting by mounting according to compact active alignment method for efficiently guiding a light generated from a laser device to the top end of a head, in which a light source device mounted on a submount has a mirror portion having an inclinated surface to at least a portion of one edge thereof for reflecting an output light from the optical source device at the inclinated surface, a structural member including a lens structure for further allowing a light to pass through the submount, and an optical waveguide disposed passing through a slider for mounting the submount, and the optical source and the slider are positioned by using active alignment of light in a chip-on carrier structure having the optical source device mounted on the submount.

Abstract: A second waveguide is formed near a first waveguide for guiding light to the vicinity of a main pole of a thermally assisted magnetic recording head, and a portion of light propagated through the waveguide 1 is branched to the second waveguide. The light transmitting in the second waveguide is detected by a photodetector to detect an intensity of the light propagated through the first waveguide. In the magnetic recording apparatus, an intensity of a semiconductor laser is decreased when an amount of light incident to the photodetector is large and the intensity of the semiconductor laser is increased when the amount of light incident to the photodetector is small. By constituting a feedback loop as described above, the intensity of the light propagated through the first waveguide is kept constant.

Abstract: It is an objective that the optical loss and the number of optical components are reduced in an optical recording head using a near-field where a laser beam is guided from a light source to the tip of the head and a thermally assisted magnetic recording head. A structure where the traveling direction of emitted beam is rotated in the direction of the cavity of the laser diode element and a reflector for guiding the beam to the surface of the surface of the laser diode element is monolithically integrated in the laser diode element is mounted over the slider so that the direction of the cavity of the laser diode element is parallel to the surface of the recording medium, and the substrate side of the laser diode element is mounted to be in the direction opposite the face adjacent to the upper face of the slider.

Abstract: An optical integrated circuit having optical devices is fabricated. These optical devices must be biased in the mutually opposite directions. If such an optical integrated circuit is fabricated using a conductive semiconductor substrate as conventionally, it is not possible to drive the devices by a single power supply since the substrate side is shared as a common polarity by the devices. The present invention realizes a structure where both anode and cathode of each device can be isolated electrically by conventional process technology and provides an optical integrated circuit which can be driven by a single power supply. An optical integrated circuit is formed on a semi-insulative or insulative substrate. A high resistivity region which extends at least from the active layer to the substrate and includes part of an optical waveguide between the devices is formed so as to electrically isolate the anode and cathode of each integrated device from the other device.

Abstract: An optical integrated circuit having optical devices is fabricated. These optical devices must be biased in the mutually opposite directions. If such an optical integrated circuit is fabricated using a conductive semiconductor substrate as conventionally, it is not possible to drive the devices by a single power supply since the substrate side is shared as a common polarity by the devices. The present invention realizes a structure where both anode and cathode of each device can be isolated electrically by conventional process technology and provides an optical integrated circuit which can be driven by a single power supply. An optical integrated circuit is formed on a semi-insulative or insulative substrate. A high resistivity region which extends at least from the active layer to the substrate and includes part of an optical waveguide between the devices is formed so as to electrically isolate the anode and cathode of each integrated device from the other device.

Abstract: A module for optical communication intended for decreasing the consumption power of a modulator integrated laser, in which a, multiple-quantum well constituting a laser active layer region comprises InGaAlAs/InGaNAs to keep the reliability and optical power level even when a chip is kept at a high temperature, and the difference of wavelength between the oscillation wavelength and the band gap wavelength of the modulator and the laser should be made greater in proportion with the elevation of the chip setting temperature for maintaining the transmission performance, by which the temperature difference between the module case temperature and the chip setting temperature is reduced to decrease the module consumption power.

Abstract: A module for optical communication intended for decreasing the consumption power of a modulator integrated laser, in which a, multiple-quantum well constituting a laser active layer region comprises InGaAlAs/InGaNAs to keep the reliability and optical power level even when a chip is kept at a high temperature, and the difference of wavelength between the oscillation wavelength and the band gap wavelength of the modulator and the laser should be made greater in proportion with the elevation of the chip setting temperature for maintaining the transmission performance, by which the temperature difference between the module case temperature and the chip setting temperature is reduced to decrease the module consumption power.

Abstract: A semiconductor device has circuit patterns formed on upper and lower surfaces of a laminated board with both surfaces lined with copper and interconnected by through holes, an IC chip mounted on the upper pattern, and external connection terminals mounted on the lower pattern, the external connection terminals comprising copper core bumps. According to a method of manufacturing such a semiconductor device, the same etching process as pattern etching for forming the circuit pattern are effected in bump forming regions on the circuit pattern formed by the resist pattern.