Patents by Inventor JunIi WANG

JunIi WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180004791
    Abstract: A method of forming a vertical transistor includes forming a fin structure on a substrate, forming a gate structure on the fin structure, and forming a bottom source/drain (S/D) region on the fin structure, such that an air gap is formed between the bottom S/D region and the gate structure.
    Type: Application
    Filed: May 31, 2017
    Publication date: January 4, 2018
    Inventors: Fee Li LIE, Shogo MOCHIZUKI, JunIi WANG