Abstract: A semiconductor device includes: a substrate including a first region and a second region; a first interconnection structure on the first region; and a capacitor structure on the second region, and the capacitor structure includes: a first electrode structure including first portions; a second electrode structure including second portions alternately arranged with the first portions; and a dielectric capacitor structure disposed between the first portions and the second portions, and the first interconnection structure includes: a first peripheral interconnection line; a first peripheral contact plug on the first peripheral interconnection line; and a first peripheral dielectric structure on a side surface of the first peripheral interconnection line and a side surface of the first peripheral contact plug, the dielectric capacitor structure may include a first dielectric material, and the first peripheral dielectric structure may include a second dielectric material.

Abstract: A method for providing a user interface for manufacturing a prosthesis includes identifying teeth from three-dimensional oral data of a patient, displaying a target tooth for a prosthesis manufacturing among the teeth on a screen in a selectable state by a user, displaying a first wheel menu for generation of the prosthesis for the target tooth for dental work or data removal operation, and displaying a first tool menu providing items for the generation of the prosthesis corresponding to the target tooth for dental work on the screen.

Abstract: A semiconductor device may include a first semiconductor structure including a substrate, an active region in the substrate, a device isolation region defining the active region, and a capacitor structure on the device isolation region and vertically overlapping the device isolation region. The capacitor structure may include a first electrode structure extending in a first direction and including first capacitor electrodes stacked in the first direction, a second electrode structure including second capacitor electrodes stacked in the first direction, and a first insulating structure between the first electrode structure and the second electrode structure. Each of the first capacitor electrodes and the second capacitor electrodes are alternately arranged and spaced apart from each other in a second direction parallel to an upper surface of the substrate, extend in a third direction perpendicular to the first direction and the second direction, and has a plate shape.