Patents by Inventor Junjae YANG

Junjae YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nano flake defect passivation method and electronic device manufactured using the same
    Patent number: 10580714
    Abstract: Provided is method of manufacturing a conductive film. The method includes forming a conductive film including a plurality of flakes on a substrate, wherein the conductive film is a semiconductor or a conductor, and forming a passivation region selectively on a boundary between the flakes adjacent to each other. The passivation region includes a metal compound selected from the group consisting of metal chalcogenide and transition metal chalcogenide. The forming of the passivation region includes providing a solution containing a first precursor including a cation of the metal compound and a second precursor including an anion of the metal compound on the conductive film. pH of the solution is between 7.0 and 10.0.
    Type: Grant
    Filed: October 30, 2018
    Date of Patent: March 3, 2020
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Sun Jin Yun, Junjae Yang, Changbong Yeon, JungWook Lim
  • NANO FLAKE DEFECT PASSIVATION METHOD AND ELECTRONIC DEVICE MANUFACTURED USING THE SAME
    Publication number: 20190131201
    Abstract: Provided is method of manufacturing a conductive film. The method includes forming a conductive film including a plurality of flakes on a substrate, wherein the conductive film is a semiconductor or a conductor, and forming a passivation region selectively on a boundary between the flakes adjacent to each other. The passivation region includes a metal compound selected from the group consisting of metal chalcogenide and transition metal chalcogenide. The forming of the passivation region includes providing a solution containing a first precursor including a cation of the metal compound and a second precursor including an anion of the metal compound on the conductive film. pH of the solution is between 7.0 and 10.0.
    Type: Application
    Filed: October 30, 2018
    Publication date: May 2, 2019
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Sun Jin YUN, Junjae YANG, Changbong YEON, JungWook LIM