Patents by Inventor Junji Asahi

Junji Asahi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fabrication of B-doped silicon film by LPCVD method using BCI3 and SiH4 gases
    Patent number: 6905963
    Abstract: A semiconductor device fabricating method for forming a boron doped silicon film includes the step of forming the boron doped silicon film on a substrate at an inner temperature of the reaction furnace ranging from about 460 to 600° C. or at an average velocity of reaction gases in the reaction furnace being not great than about 2200 cm/min. Further, a substrate processing apparatus for forming a boron doped silicon film on a substrate includes a gas supply line for supplying BCl3 to the reaction furnace. The gas supply line is installed in a portion of the reaction furnace opposite to a heater, and has an outlet for discharging BCl3. The outlet of the gas supply line is provided at an upstream side of gas flow in the reaction furnace.
    Type: Grant
    Filed: September 27, 2002
    Date of Patent: June 14, 2005
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Takaaki Noda, Akira Morohashi, Junji Asahi
  • Method for fabricating a semiconductor device and a substrate processing apparatus
    Publication number: 20030077920
    Abstract: A semiconductor device fabricating method for forming a boron doped silicon film includes the step of forming the boron doped silicon film on a substrate at an inner temperature of the reaction furnace ranging from about 460 to 600° C. or at an average velocity of reaction gases in the reaction furnace being not great than about 2200 cm/min. Further, a substrate processing apparatus for forming a boron doped silicon film on a substrate includes a gas supply line for supplying BCl3 to the reaction furnace. The gas supply line is installed in a portion of the reaction furnace opposite to a heater, and has an outlet for discharging BCl3. The outlet of the gas supply line is provided at an upstream side of gas flow in the reaction furnace.
    Type: Application
    Filed: September 27, 2002
    Publication date: April 24, 2003
    Applicant: Hitachi Kokusai Electric Inc.
    Inventors: Takaaki Noda, Akira Morohashi, Junji Asahi