Abstract: The present invention provides a method for producing a 4,4,7-trifluoro-1,2,3,4-tetrahydro-5H-1-benzazepine compound which has an superior agonistic activity to an arginine vasopressin V2 receptor and is useful as an active ingredient for a pharmaceutical composition for preventing and/or treating urinary frequency, urinary incontinence, enuresis, central diabetes insipidus, nocturia, nocturnal enuresis, or the like; and useful intermediates for use in the methods. The production method of the present invention is suitable for the industrial production of a medicament, because of a smaller number of steps, a higher yield, and a lower cost, as compared with the methods in the related art.

Abstract: The present invention provides a method for producing a 4,4,7-trifluoro-1,2,3,4-tetrahydro-5H-1-benzazepine compound which has an superior agonistic activity to an arginine vasopressin V2 receptor and is useful as an active ingredient for a pharmaceutical composition for preventing and/or treating urinary frequency, urinary incontinence, enuresis, central diabetes insipidus, nocturia, nocturnal enuresis, or the like; and useful intermediates for use in the methods. The production method of the present invention is suitable for the industrial production of a medicament, because of a smaller number of steps, a higher yield, and a lower cost, as compared with the methods in the related art.

Abstract: One aspect of the present invention relates to a computer program for causing a computer to operate as an energy management system for managing the operation state of electric power devices including a storage battery connected to a power grid. The program includes: a first step of acquiring static parameters used in controlling the electric power devices; and a second step of controlling the electric power devices based on the acquired static parameters. The static parameters acquired in the first step include at least five types of parameters, namely, a storage battery capacity, dischargeable power, chargeable power, discharge efficiency, and charge efficiency.

Abstract: The present invention provides a method for producing a 4,4,7-trifluoro-1,2,3,4-tetrahydro-5H-1-benzazepine compound which has an superior agonistic activity to an arginine vasopressin V2 receptor and is useful as an active ingredient for a pharmaceutical composition for preventing and/or treating urinary frequency, urinary incontinence, enuresis, central diabetes insipidus, nocturia, nocturnal enuresis, or the like; and useful intermediates for use in the methods. The production method of the present invention is suitable for the industrial production of a medicament, because of a smaller number of steps, a higher yield, and a lower cost, as compared with the methods in the related art.

Abstract: The present invention provides a method for producing a 4,4,7-trifluoro-1,2,3,4-tetrahydro-5H-1-benzazepine compound which has an superior agonistic activity to an arginine vasopressin V2 receptor and is useful as an active ingredient for a pharmaceutical composition for preventing and/or treating urinary frequency, urinary incontinence, enuresis, central diabetes insipidus, nocturia, nocturnal enuresis, or the like; and useful intermediates for use in the methods. The production method of the present invention is suitable for the industrial production of a medicament, because of a smaller number of steps, a higher yield, and a lower cost, as compared with the methods in the related art.

Abstract: The present invention provides a method for producing a 4,4,7-trifluoro-1,2,3,4-tetrahydro-5H-1-benzazepine compound which has an superior agonistic activity to an arginine vasopressin V2 receptor and is useful as an active ingredient for a pharmaceutical composition for preventing and/or treating urinary frequency, urinary incontinence, enuresis, central diabetes insipidus, nocturia, nocturnal enuresis, or the like; and useful intermediates for use in the methods. The production method of the present invention is suitable for the industrial production of a medicament, because of a smaller number of steps, a higher yield, and a lower cost, as compared with the methods in the related art.

Abstract: One aspect of the present invention relates to a computer program for causing a computer to operate as an energy management system for managing the operation state of electric power devices including a storage battery connected to a power grid. The program includes: a first step of acquiring static parameters used in controlling the electric power devices; and a second step of controlling the electric power devices based on the acquired static parameters. The static parameters acquired in the first step include at least five types of parameters, namely, a storage battery capacity, dischargeable power, chargeable power, discharge efficiency, and charge efficiency.

Abstract: The present invention provides a method for producing a 4,4,7-trifluoro-1,2,3,4-tetrahydro-5H-1-benzazepine compound which has an superior agonistic activity to an arginine vasopressin V2 receptor and is useful as an active ingredient for a pharmaceutical composition for preventing and/or treating urinary frequency, urinary incontinence, enuresis, central diabetes insipidus, nocturia, nocturnal enuresis, or the like; and useful intermediates for use in the methods. The production method of the present invention is suitable for the industrial production of a medicament, because of a smaller number of steps, a higher yield, and a lower cost, as compared with the methods in the related art.

Abstract: A mixer circuit is composed of a differential amplifier circuit and a DBM circuit. The differential amplifier circuit has a first bipolar transistor, a second bipolar transistor, a first resistor provided between the respective bases of the first and second bipolar transistors, and a capacitor provided between the base of the second bipolar transistor and the ground. Since the first resistor and the capacitor are provided such that the circuit undergoes RC oscillation in response to the third harmonic of an input signal, the third and higher-order harmonics can be reduced.

Abstract: A mixer circuit is composed of a differential amplifier circuit and a DBM circuit. The differential amplifier circuit has a first bipolar transistor, a second bipolar transistor, a first resistor provided between the respective bases of the first and second bipolar transistors, and a capacitor provided between the base of the second bipolar transistor and the ground. Since the first resistor and the capacitor are provided such that the circuit undergoes RC oscillation in response to the third harmonic of an input signal, the third and higher-order harmonics can be reduced.

Abstract: When forming first and second circuits on a semiconductor substrate, an isolation region is provided between the first and second circuits by embedding a conductor in the semiconductor substrate. Also, an output node of a low impedance voltage output circuit that provides a fixed voltage at low impedance is connected to the isolation region. In this way, a noise current caused by high-frequency noise generated from the first or second circuit flows into the low impedance voltage output circuit. Hence leakage of noise signals between the circuits can be suppressed.

Abstract: When forming first and second circuits on a semiconductor substrate, an isolation region is provided between the first and second circuits by embedding a conductor in the semiconductor substrate. Also, an output node of a low impedance voltage output circuit that provides a fixed voltage at low impedance is connected to the isolation region. In this way, a noise current caused by high-frequency noise generated from the first or second circuit flows into the low impedance voltage output circuit. Hence leakage of noise signals between the circuits can be suppressed.

Abstract: A field emission cathode capable of emitting electrons under a low voltage. Lead-out electrodes are formed on an insulating layer and openings are formed at a lamination between the insulating layer and each of the lead-out electrodes. Emitters each are arranged in each of the openings. The insulating layer is provided on a lower surface thereof with a photoresist layer modified by heating. The modified photoresist layer is electrically connected through a resistive layer to a cathode electrode. The cathode electrode is formed in a pattern on a cathode substrate made of glass or the like. The emitters each are constituted by a distal end of each of projections of the modified photoresist layer exposed from the insulating layer. The photoresist is modified by heating, resulting in being provided with electrical conductivity and exhibiting stable electron emitting characteristics under a low voltage.

Abstract: A transmitter-receiver circuit for radio communication, comprising a low-noise receiver amplifier (20); a first matching circuit (40) which converts the input impedance of the amplifier (20); a transmitter amplifier (10) including a second matching circuit (50) and a third matching circuit (60) which convert the impedances to transmitting signals; and a mode switch (30) for changing from transmitting to receiving and vice versa. The transmitter amplifier (10) has a control terminal (14) connected to the gate electrode of a high-power FET (12), and the output terminal (15A) of the terminal (10) is connected to an antenna (80) not through the switch (30).

Abstract: A field emission cathode that can uniform the number of electrons emitted from each emitter and can prevent a line defect even when a gate electrode is electrically short-circuited with an emitter. The movement of electrons in a channel formed on the channel forming electrode is controlled by applying a positive voltage to the current control electrode, so that the current supplied from the cathode electrode to the emitter can be controlled. If the emitter is short-circuited with the gate electrode, the increased current density destroys the channel, so that the current supply to the emitter can be stopped.

Abstract: An RF-driven semiconductor chip is die-bonded to the top face of a metal plate. The semiconductor chip and the metal plate are molded together with outer leads in a plastic package in the form of a rectangular parallelepiped. The metal plate is exposed at the back face of the plastic package. The metal plate is not protruding from the front and rear side faces of the plastic package. The front and rear side faces of the metal plate are flush with the front and rear side faces of the plastic package and partially exposed at the front and rear side faces of the plastic package. The front and rear portions of the plastic package are centrally formed with respective cutaway portions each in the form of a rectangular parallelepiped. The top face of the metal plate is exposed in the cutaway portions formed centrally in the front and rear portions of the plastic package to form solder portions.

Abstract: A cold electron emission device including an emitter having a protrusion having a sharp tip and disposed at a first end of a semiconductor thin film formed on an insulation substrate; a cathode electrode disposed at a second end of the semiconductor thin film; at least one gate electrode disposed between the emitter and the cathode electrode for controlling a current flowing through the semiconductor thin film; an insulating layer arranged to cover the semiconductor thin film, cathode electrode and gate electrode, except for the emitter; and a lead electrode arranged on the insulating layer such that it surrounds the tip of the emitter, thereby making it possible to achieve a cold electron emission device with reliable current stability.

Abstract: In a comb-like or wedge-like electron emitting device, an emitter or both an emitter and an anode electrode are processed from a single-crystal silicon thin film of an SOI wafer. The single-crystal silicon thin film in portions other than the processed portion is removed so that the silicon oxide layer is dug down further slightly. A gate electrode for applying an electric field in order to draw electrons out of the emitter is provided in the dug-down portion. When the end and side faces of the emitter are formed as (111) faces by anisotropic etching in the condition that the single-crystal silicon thin film is oriented to a (100) face, the emitter has a sharp edge at about 55.degree. with respect to the substrate. In a conical electron emitting device, the gate electrode is constituted by a single-crystal silicon thin film of an SOI wafer so that a pyramid surrounded by the (111) faces is formed on the single-crystal silicon substrate.

Abstract: A field emission device of simple structure enables stabilization and control of field emission current. Emission current is controlled by a plurality of control voltage systems. An emitter having a sharp tip is fabricated by processing a p-type semiconductor substrate, and an n-type source region is provided on the p-type semiconductor substrate surface at a position that is laterally separated from the emitter. An electrode layer having an aperture facing the apex portion of the emitter is provided on an insulating layer, the electrode layer extending to above the n-type source region. Voltage applied to the electrode layer to apply an extractor field to the apex portion of the emitter and to induce inversion layers at the emitter surface and the surface of the p-type semiconductor substrate. The electrode layer is divided into a plurality of electrodes.

Abstract: In a comb-like or wedge-like electron emitting device, an emitter or both an emitter and an anode electrode are processed from a single-crystal silicon thin film of an SOI wafer. The single-crystal silicon thin film in portions other than the processed portion is removed so that the silicon oxide layer is dug down further slightly. A gate electrode for applying an electric field in order to draw electrons out of the emitter is provided in the dug-down portion. When the end and side faces of the emitter are formed as (111) faces by anisotropic etching in the condition that the single-crystal silicon thin film is oriented to a (100) face, the emitter has a sharp edge at about 55.degree. with respect to the substrate. In a conical electron emitting device, the gate electrode is constituted by a single-crystal silicon thin film of an SOI wafer so that a pyramid surrounded by the (111) faces is formed on the single-crystal silicon substrate.