Abstract: Photoelectric conversion apparatus including semiconductor layer includes pixel array region and peripheral region. The semiconductor layer has first and second faces. Each pixel includes first semiconductor region of first conductivity type arranged on the first face side and second semiconductor region of second conductivity type arranged on the second face side, and predetermined voltage causing avalanche multiplication operation is supplied between the first semiconductor region and the second semiconductor region. The peripheral region includes third semiconductor region of the first conductivity type arranged on the first face side, fourth semiconductor region of the second conductivity type arranged apart from the third semiconductor region, and fifth semiconductor region of the first conductivity type arranged, close to the third semiconductor region, between the third semiconductor region and the fourth semiconductor region.

Abstract: A photoelectric conversion apparatus includes an avalanche diode disposed in a semiconductor layer having a first surface and a second surface opposite the first surface. The avalanche diode includes a first semiconductor region of first conductivity type disposed at a first depth and a second semiconductor region of second conductivity type disposed at a second depth deeper than the first depth with respect to the second surface. The photoelectric conversion apparatus further includes a first wiring portion electrically connected to the first semiconductor region; and a second wiring portion electrically connected to the second semiconductor region, An oxide film and a protective film stacked on the oxide film are disposed on the second surface of the semiconductor layer.

Abstract: Photoelectric conversion apparatus including semiconductor layer includes pixel array region and peripheral region. The semiconductor layer has first and second faces. Each pixel includes first semiconductor region of first conductivity type arranged on the first face side and second semiconductor region of second conductivity type arranged on the second face side, and predetermined voltage causing avalanche multiplication operation is supplied between the first semiconductor region and the second semiconductor region. The peripheral region includes third semiconductor region of the first conductivity type arranged on the first face side, fourth semiconductor region of the second conductivity type arranged apart from the third semiconductor region, and fifth semiconductor region of the first conductivity type arranged, close to the third semiconductor region, between the third semiconductor region and the fourth semiconductor region.

Abstract: A photoelectric conversion apparatus comprising an avalanche diode disposed in a semiconductor layer having a first surface and a second surface opposite the first surface. The avalanche diode includes a first semiconductor region of first conductivity type disposed at a first depth and a second semiconductor region of second conductivity type disposed at a second depth deeper than the first depth with respect to the second surface. An oxide film and a protective film stacked on the oxide film are disposed on the second surface of the semiconductor layer. There is a point at which dsio>(?sio/?prot)×dprot/2 is satisfied, where dsio is a thickness of the oxide film, dprot is a thickness of the protective film, ?sio is a relative permittivity of the oxide film, and ?prot is a relative permittivity of the protective film.

Abstract: A photoelectric conversion device includes a substrate, a photoelectric conversion unit arranged in the substrate and configured to generate charges corresponding to incident light, and a pixel isolation portion arranged in the substrate and isolating the photoelectric conversion unit from other elements. A sidewall of the pixel isolation portion has a plurality of depressions and protrusions in a cross-sectional view. A period of at least a part of the plurality of depressions and protrusions is greater than ½ of a wavelength of light to which the photoelectric conversion unit has sensitivity.

Abstract: A photoelectric conversion apparatus includes a semiconductor layer having an avalanche photodiode, and a wiring structure electrically connected to the semiconductor layer. In a plan view, the photoelectric conversion apparatus comprises a pixel region including the avalanche photodiode, and a peripheral region located between the pixel region and an outer edge of the photoelectric conversion apparatus. A third wiring layer is located between a first wiring layer and a second wiring layer. The first wiring layer includes, in the peripheral region, a first conductive part for transmitting an anode potential of the avalanche photodiode. The second wiring layer includes, in the peripheral region, a second conductive part for transmitting a second potential different from the anode potential. The first conductive part and the second conductive part overlap in the plan view.

Abstract: An apparatus includes a plurality of avalanche diodes disposed in a layer having a first surface and a second surface opposite the first surface, wherein the plurality of avalanche diodes each includes a first region of first conductivity type located at a first depth, a second region of second conductivity type located at a second depth greater than the first depth with respect to the second surface, and a third region of the second conductivity type located at a third depth greater than the second depth with respect to the second surface, wherein the layer includes a plurality of structures disposed in the first surface, and wherein the plurality of structures has an effective period less than hc/Ea (h: Planck's constant [J·s], c: speed of light [m/s], and Ea: a band gap of a substrate [J]).

Abstract: Provided is a photoelectric conversion device including: a first substrate having a first face; photodiodes arranged in the first substrate and each having a first region that generates signal charges by photoelectrically converting an incident light and a second region that receives the signal charges moving from the first region; a first isolation region arranged in the first substrate at a first depth and including a first portion extending in a first direction so as to isolate the second regions from each other; and a second isolation region arranged in the first substrate at a second depth deeper than the first depth from the first face, and including a second portion extending in a second direction intersecting the first direction in plan view so as to isolate the first regions from each other, and the first and second portions are partially overlapped with each other in plan view.

Abstract: A photoelectric conversion device includes a connecting portion that electrically connects a contact plug of anode wiring and the second semiconductor region of the isolation portion. The connecting portion includes a third semiconductor region of the second conducting type that is connected to the contact plug of the anode wiring, and a fourth semiconductor region of the second conducting type that is disposed between the third semiconductor region and the second semiconductor region. The impurity concentration of the third semiconductor region is higher than the impurity concentration of the second semiconductor region and the impurity concentration of the fourth semiconductor region is lower than the impurity concentration of the third semiconductor region. With respect to a direction in which the APDs are arrayed, the width of the isolation portion is smaller than the width of the connecting portion.

Abstract: A photoelectric conversion apparatus includes a first and a second multilayer wiring layer. The first or the second multilayer wiring layer is provided with a first electrode supplied with a first voltage from an outside of the photoelectric conversion apparatus. The first electrode is not connected with a second semiconductor layer.

Abstract: A semiconductor element including an array in which a plurality of avalanche photodiodes is arranged includes a plurality of first electrodes configured to receive supply of a first voltage to be used by the plurality of avalanche photodiodes from outside, and at least one second electrode configured to receive supply of a second voltage from outside different from the first voltage. The plurality of first electrodes and the at least one second electrode are disposed outside the array. The at least one second electrode is disposed between one and another one of the plurality of first electrodes.

Abstract: An apparatus includes a plurality, of avalanche diodes disposed in a layer having a first surface and a second surface opposite the first surface, wherein the plurality of avalanche diodes each includes a first region of first conductivity type located at a first depth, a second region of second conductivity type located at a second depth greater than the first depth with respect to the second surface, and a third region of the second conductivity type located at a third depth greater than the second depth with respect to the second surface, wherein the layer includes a plurality of structures disposed in the first surface, and wherein the plurality of structures has an effective period less than hc/Ea(h: Planck's constant [J·s], c: speed of light [m/s], and Ea: a band gap of a substrate [J].

Abstract: A photoelectric conversion apparatus includes a plurality of avalanche photodiodes. Each of the plurality of avalanche photodiodes includes an avalanche multiplication unit formed by a first semiconductor region of a first conductivity type that is arranged at a first depth, and a second semiconductor region of a second conductivity type different from the first conductivity type and which is arranged at a second depth deeper than the first depth. A fourth semiconductor region at least one of a conductivity type and an impurity concentration of which is different from those of a third semiconductor region of the second conductivity type is arranged at a position shallower than the third semiconductor region, and a depth of a boundary portion between the third semiconductor region and the fourth semiconductor region is deeper than that of the avalanche multiplication unit.

Abstract: A photoelectric conversion apparatus includes a first substrate including a plurality of avalanche photodiodes, a second substrate including a plurality of pixel circuits, and a third substrate including a signal processing circuit, wherein the second substrate and the third substrate are stacked in such a manner that a third wiring structure is disposed between two semiconductor layers included in the second substrate and the third substrate, with a first through wire penetrating through the semiconductor layer included in the third substrate is disposed.

Abstract: A photoelectric conversion apparatus includes a plurality of avalanche photodiodes. Each of the plurality of avalanche photodiodes includes an avalanche multiplication unit formed by a first semiconductor region of a first conductivity type that is arranged at a first depth, and a second semiconductor region of a second conductivity type different from the first conductivity type and which is arranged at a second depth deeper than the first depth. A fourth semiconductor region at least one of a conductivity type and an impurity concentration of which is different from those of a third semiconductor region of the second conductivity type is arranged at a position shallower than the third semiconductor region, and a depth of a boundary portion between the third semiconductor region and the fourth semiconductor region is deeper than that of the avalanche multiplication unit.

Abstract: A semiconductor element including an array in which a plurality of avalanche photodiodes is arranged includes a plurality of first electrodes configured to receive supply of a first voltage to be used by the plurality of avalanche photodiodes from outside, and at least one second electrode configured to receive supply of a second voltage from outside different from the first voltage. The plurality of first electrodes and the at least one second electrode are disposed outside the array. The at least one second electrode is disposed between one and another one of the plurality of first electrodes.

Abstract: Photoelectric conversion apparatus includes semiconductor layer including pixel array region, peripheral region, scribe region, and isolation portion isolating the peripheral region and the scribe region. Each pixel includes avalanche photodiode having first semiconductor region of first conductivity type and second semiconductor region of second conductivity type. The peripheral region includes first region of the first conductivity type and second region of the second conductivity type. The second region and the second semiconductor region are supplied with the same voltage. The scribe region includes third region of the first conductivity type. Wiring structure includes first conductive path connecting the first region and the third region, and voltage supply line supplied with voltage between voltage of the first semiconductor region and voltage of the second semiconductor region. The first region and the voltage supply line are connected by second conductive path.

Abstract: Photoelectric conversion apparatus includes semiconductor layer and wiring structure. The semiconductor layer includes pixel array region of avalanche photodiodes, scribe region, peripheral region arranged between the pixel array region and the scribe region, and isolation portion isolating the peripheral region and the scribe region. The peripheral region includes first and second regions of first conductivity type, and third region of second conductivity type. The scribe region includes fourth region of the first conductivity type. The wiring structure includes conductive path connecting the second region and the fourth region. The wiring structure includes first voltage supply line supplying first voltage to the first region to extract first polarity charge from the peripheral region through the first region, and second voltage supply line supplying second voltage to the third region to extract second polarity charge from the peripheral region through the third region.

Abstract: A photoelectric conversion apparatus includes a first substrate including a plurality of avalanche photodiodes, a second substrate including a plurality of pixel circuits, and a third substrate including a signal processing circuit, wherein the second substrate and the third substrate are stacked in such a manner that a third wiring structure is disposed between two semiconductor layers included in the second substrate and the third substrate, with a first through wire penetrating through the semiconductor layer included in the third substrate is disposed.

Abstract: A photoelectric conversion apparatus includes a first substrate having a first semiconductor device layer including a plurality of photoelectric conversion units and a well, and a second substrate having a second semiconductor device layer including a circuit configured to process signals obtained by the plurality of photoelectric conversion units, wherein the first and second substrates are laminated together, wherein the first semiconductor device layer includes an effective pixel region, an optical black pixel region, and an outer periphery region, wherein, in a planar view, a light-blocking region formed by a light-blocking layer overlaps the optical black pixel region, and the light-blocking region does not overlap the outer periphery region, wherein the outer periphery region has a charge draining region including a semiconductor region of the same conductivity type as a signal charge, and wherein a fixed potential is supplied to the charge draining region.