Abstract: A holding unit holds a substrate to enable a surface of the substrate to be processed. The unit has a vacuum suction member that comes into contact with a peripheral portion of the surface of the substrate and sucks the substrate. A processing apparatus holds the wafer stably and allows an edge, a bevel portion and/or a back surface of the wafer to be processed.

Abstract: A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material 90 contacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrode 88 passes an electric current upon contact with the substrate. A cathode portion 38 rotates integrally with the substrate holding portion 36. An electrode arm portion 30 is above the cathode portion 38 and movable horizontally and vertically and has an anode 98 face-down. Plating liquid is poured into a space between the surface to be plated and the anode 98 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.

Abstract: A polishing apparatus has a feed reel for feeding a polishing tape wound thereon and having a polishing surface, a take-up reel for reeling up the polishing tape from the feed reel, a presser for pressing the polishing tape between the feed reel and the take-up reel against a surface, to be polished, of a workpiece, and a motor for rotating the take-up reel. The feed reel, the take-up reel, and the presser are housed in a cartridge, which is detachably held by a cartridge holder.

Abstract: The present invention relates to an electroless plating apparatus which can reduce the amount of a plating liquid to be used, maintain a stable plating process, be downsized, reduce an apparatus cost, form a film having a uniform thickness over an entire surface, and prevent a plating liquid from being deteriorated due to a temperature rise. The present invention comprises a holding apparatus for holding a substrate with a surface, to be plated, facing upward, a plating liquid holding mechanism for sealing a periphery of the surface, to be plated, of the substrate held by the holding apparatus, an electroless plating treatment liquid supply apparatus for supplying an electroless plating liquid to the surface, to be plated, of the substrate sealed by the plating liquid holding mechanism to allow the supplied electroless plating liquid to be stored on the substrate, and a heating apparatus provided below the substrate.

Abstract: A polishing apparatus has a feed reel for feeding a polishing tape wound thereon and having a polishing surface, a take-up reel for reeling up the polishing tape from the feed reel, a presser for pressing the polishing tape between the feed reel and the take-up reel against a surface, to be polished, of a workpiece, and a motor for rotating the take-up reel. The feed reel, the take-up reel, and the presser are housed in a cartridge, which is detachably held by a cartridge holder.

Abstract: The present invention relates to a plating method and a plating apparatus which can attain embedding of copper into fine interconnection patterns with the use of a plating liquid having high throwing power and leveling properties, and which can make the film thickness of the plated film substantially equal between the interconnection region and the non-interconnection region, thereby facilitating a later CMP processing. A plating method comprising filling a plating liquid containing metal ions and an additive into a plating space formed between a substrate and an anode disposed closely to the substrate so as to face the substrate, and changing the concentration of the additive in the plating liquid filled into the plating space during a plating process.

Abstract: A holding unit for holding a substrate to enable a surface of the substrate to be processed. The unit comprises a vacuum suction member that comes into contact with a peripheral portion of the surface of the substrate and sucks the substrate. A processing apparatus holds the wafer stably and allows an edge, a bevel portion and/or a back surface of the wafer to be processed.

Abstract: A substrate is plated with a metal film of uniform thickness only in a limited area thereof which is to be plated. A substrate plating apparatus has a substrate holder for holding a substrate and a plating cell for plating a portion of a surface, to be plated, of the substrate held by the substrate holder. The plating cell has an anode disposed so as to cover the portion of the surface, to be plated, of the substrate held by the substrate holder, a cathode for supplying a current to the surface, to be plated, of the substrate in such a state that the cathode is brought into contact with the substrate, a plating liquid supplying device for supplying a plating liquid between the anode and the surface, to be plated, of the substrate, and a power source for applying a voltage between the anode and the cathode.

Abstract: This invention relates, particularly, to a plating method and apparatus for a substrate for uses, such as the filling of a metal, e.g., copper (Cu), into a fine interconnection pattern (recesses) formed in a semiconductor substrate.

Abstract: A substrate processing apparatus fills a metal such as copper or the like in fine interconnection patterns or trenches defined in a semiconductor substrate. The substrate processing apparatus has a loading/unloading unit for placing a substrate cassette to load and unload a substrate, a substrate treating unit for treating a substrate, and a transfer robot for transferring a substrate between the loading/unloading unit and the substrate treating unit. The loading/unloading unit, the substrate treating unit, and the transfer robot are installed in a single facility. The loading/unloading unit has a rotary table which is horizontally rotatable for positioning the substrate cassette in a position to detect the substrate cassette placed in the loading/unloading unit and to remove the substrate from the substrate cassette with the transfer robot.

Abstract: In an electroplating apparatus, an electrolytic agent is filled into the portion between an anode and a dummy cathode which is opposite substantially face to face and parallel to the anode, and an electric current is supplied to this portion, thereby suppressing changes in properties of a black film during the period in which plating to a substrate to be processed is stopped. In particular, by applying an electric current to the anode immediately before plating to the substrate is resumed, the film formation characteristics of plating to the substrate can be maximally stabilized. This can reduce the consumption power and dissolution of the anode. This apparatus is particularly effective in copper plating in which the formation of a black film is significant.

Abstract: A polishing apparatus and method has a function of polishing a surface of a film formed on a substrate to a flat mirror finish and a function of polishing unnecessary metal film such as copper film deposited on an outer peripheral portion of the substrate to remove such unnecessary metal film. The polishing apparatus comprises a surface polishing mechanism comprising a polishing table having a polishing surface and a top ring for holding the workpiece and pressing the workpiece against the polishing surface of the polishing table to thereby polish a surface of the workpiece, and an outer periphery polishing mechanism for polishing an outer peripheral portion of the workpiece.

Abstract: This invention relates to a semiconductor substrate processing apparatus and method for forming interconnects by filling a circuit pattern groove and/or a hole formed in a semiconductor substrate with a plated metal film, and removing the plated metal film while leaving the metal film at the filled portion. The apparatus comprises a carry-in and carry-out section for carrying in and carrying out a semiconductor substrate, which has a circuit formed on a surface thereof, in a dry state; a plated metal film forming unit for forming a plated metal film on the semiconductor substrate which has been carried in; a bevel etching unit for etching a peripheral edge portion of the semiconductor substrate; a polishing unit for polishing at least part of the plated metal film on the semiconductor substrate; and a transport mechanism for transporting the semiconductor substrate between the above units.