Patents by Inventor Junji Madono

Junji Madono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RARE EARTH ELEMENT-CONTAINING HYDROGEN STORAGE ALLOY, METHOD OF PRODUCING THE SAME, NEGATIVE ELECTRODE USING SAID ALLOY, AND ALKALINE RECHARGEABLE BATTERY USING SAID ELECTRODE ENCAPSULATED
    Publication number: 20010015243
    Abstract: Provided is a rare earth element-containing hydrogen storage alloy which fulfills at least one requirement selected from the requirements that (1) the total content of nonmetal elements present as impurities in the alloy matrix is not higher than 1,200 ppm by weight, (2) the total content of alkaline earth metal elements present as impurities in the alloy matrix is not higher than 100 ppm by weight, (3) the content of Mg present as an impurity in the alloy matrix is not higher than 80 ppm by weight, (4) the content of Cl present as an impurity in the alloy matrix is not higher than 10 ppm by weight, (5) the content of Pb present as an impurity in the alloy matrix is not higher than 100 ppm by weight, (6) the alloy has, in a surface layer covering from the alloy surface to a depth of 20 nm, an oxygen concentration that decreases sharply in the depth direction and is not higher than 10 weight % on the average in the surface layer defined above, (7) the alloy comprises Ni as a constituent element and contains,
    Type: Application
    Filed: May 18, 1999
    Publication date: August 23, 2001
    Inventors: SATOSHI SHIMA, HIROTO SUGAHARA, JUNJI MADONO, HIDENAO YAMAGUCHI
  • Silicon carbide member
    Patent number: 5229193
    Abstract: A silicon carbide member is manufactured by depositing a silicon carbide coating on a substrate of silicon carbide containing free silicon by chemical vapor deposition. By gradually reducing the content of free silicon of the coating such that the coating is made of silicon carbide containing free silicon at the interface with the substrate, but of silicon carbide containing no free silicon at the outer surface, the coating is firmly bonded to the substrate, undergoes little thermal stress and is resistant against cracking and separation upon thermal cycling. The member is suitable for use in the heat treatment of semiconductor elements.
    Type: Grant
    Filed: November 5, 1990
    Date of Patent: July 20, 1993
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Junji Madono, Michio Hayashi, Fukuji Matsumoto