Abstract: To provide a solid-state imaging device capable of achieving a further improvement in polarization efficiency.

Abstract: There is provided a light-receiving element including: an on-chip lens; an interconnection layer; and a semiconductor layer arranged between the on-chip lens and the interconnection layer, the semiconductor layer including a photodiode, an interpixel trench portion engraved up to at least a part in a depth direction of the semiconductor layer at a boundary portion of an adjacent pixel, and an in-pixel trench portion engraved at a prescribed depth from a front surface or a rear surface of the semiconductor layer at a position overlapping a part of the photodiode in a plan view.

Abstract: According to one embodiment, a solid-state imaging device is provided. The solid-state imaging device includes a photoelectric conversion element, a first anti-reflection film, an intermediate film, and a second anti-reflection film. The photoelectric conversion element is disposed corresponding to each of a plurality of colored lights. The first anti-reflection film is disposed on a photo-receiving surface side of the photoelectric conversion element. The intermediate film is disposed on a photo-receiving surface side of the first anti-reflection film. The second anti-reflection film is disposed on a photo-receiving surface side of the intermediate film. At least one of the first anti-reflection film, the intermediate film, and the second anti-reflection film has different film thicknesses for respective colored lights to be received.

Abstract: According to one embodiment, a back side illumination type solid-state imaging device includes an imaging area in which a plurality of unit pixels each including a photoelectric conversion section and a signal scan circuit section are arranged on a semiconductor substrate, and a light illumination surface formed on a surface of the semiconductor substrate located opposite a surface of the semiconductor substrate on which the signal scan circuit section is formed, wherein the unit pixel comprises a high-sensitivity pixel and a low-sensitivity pixel with a lower sensitivity than the high-sensitivity pixel. And each of the high-sensitivity pixel and the low-sensitivity element comprises a first pixel separation layer located on the light illumination surface side in the semiconductor substrate to separate the pixels from each other.

Abstract: A solid-state imaging device includes a photodiode array having a plurality of photodiodes, read transistors each having one terminal and the other terminal of a current path, one terminal of the current path being connected to one of four photodiodes corresponding to two photodiodes adjacent in a row direction and two photodiodes adjacent in a column direction, the other terminal of the current path being connected in common to a first node, the first node provided as a set of four photodiodes being in a floating-state, read control lines to connect the gate of the read transistor corresponding to each set of the read transistors in common, and independently supplied with a read signal, and vertical signal lines supplied with a signal converted by two photodiodes adjacent in a row direction of the photodiodes for an independent period within one horizontal blanking period of image scanning.

Abstract: According to one embodiment, a solid-state imaging device includes a photodiode module in which first photodiodes corresponding to high-sensitivity pixels and second photodiodes corresponding to low-sensitivity pixels are alternately arranged at preset pitch P in a semiconductor substrate, high-sensitivity pixel interconnection lines formed at preset pitch C on the substrate, low-sensitivity pixel interconnection lines that are formed at preset pitch D on the substrate, high-sensitivity pixel color filters formed at preset pitch A on the opposite side of the respective interconnection lines with respect to the substrate, and low-sensitivity pixel interconnection lines that are formed at preset pitch B on the other side of the interconnection lines with respect to the substrate. The relationship between the above pitches is set to D=B<P<A=C.

Abstract: According to one embodiment, a back side illumination type solid-state imaging device includes an imaging area in which a plurality of unit pixels each including a photoelectric conversion section and a signal scan circuit section are arranged on a semiconductor substrate, and a light illumination surface formed on a surface of the semiconductor substrate located opposite a surface of the semiconductor substrate on which the signal scan circuit section is formed, wherein the unit pixel comprises a high-sensitivity pixel and a low-sensitivity pixel with a lower sensitivity than the high-sensitivity pixel. And each of the high-sensitivity pixel and the low-sensitivity element comprises a first pixel separation layer located on the light illumination surface side in the semiconductor substrate to separate the pixels from each other.

Abstract: A solid-state imaging device that suppresses crosstalk of light in a semiconductor substrate that caused by diffraction of light is disclosed. According to one aspect of the present invention, there is provided a solid-state imaging device comprising a plurality of pixels, each pixel comprising a photoelectric conversion element that is provided in a semiconductor substrate and performs photoelectric conversion of incident light to store signal charges, a floating junction that is provided in the semiconductor substrate in the proximity of the photoelectric conversion element and temporarily stores signal charges, and a transfer transistor that transfers the signal charges stored in the photoelectric conversion element to the floating junction, wherein at least one transfer transistor includes a gate electrode extended to cover a corresponding photoelectric conversion element.

Abstract: A solid-state imaging device includes a photodiode array having a plurality of photodiodes, read transistors each having one terminal and the other terminal of a current path, one terminal of the current path being connected to each of four photodiodes corresponding to two photodiodes adjacent in a row direction and two photodiodes adjacent in a column direction, the other terminal of the current path being connected in common to a first node, the first node provided as a set of four photodiodes being in a floating-state, read control lines to connect the gate of the read transistor corresponding to each set of the read transistors in common, and independently supplied with a read signal, and vertical signal lines supplied with a signal converted by two photodiodes adjacent in a row direction of the photodiodes for an independent period within one horizontal blanking period of image scanning.

Abstract: A solid-state imaging device that suppresses crosstalk of light in a semiconductor substrate that caused by diffraction of light is disclosed. According to one aspect of the present invention, there is provided a solid-state imaging device comprising a plurality of pixels, each pixel comprising a photoelectric conversion element that is provided in a semiconductor substrate and performs photoelectric conversion of incident light to store signal charges, a floating junction that is provided in the semiconductor substrate in the proximity of the photoelectric conversion element and temporarily stores signal charges, and a transfer transistor that transfers the signal charges stored in the photoelectric conversion element to the floating junction, wherein at least one transfer transistor includes a gate electrode extended to cover a corresponding photoelectric conversion element.