Patents by Inventor Junji Ochi

Junji Ochi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing SiC epitaxial wafer
    Patent number: 9988738
    Abstract: A method for manufacturing a SiC epitaxial wafer includes: a first step of, by supplying a Si supply gas and a C supply gas, performing a first epitaxial growth on a SiC bulk substrate with a 4H—SiC(0001) having an off-angle of less than 5° as a main surface at a first temperature of 1480° C. or higher and 1530° C. or lower; a second step of stopping the supply of the Si supply gas and the C supply gas and increasing a temperature of the SiC bulk substrate from the first temperature to a second temperature; and a third step of, by supplying the Si supply gas and the C supply gas, performing a second epitaxial growth on the SiC bulk substrate having the temperature increased in the second step at the second temperature.
    Type: Grant
    Filed: December 26, 2013
    Date of Patent: June 5, 2018
    Assignee: Mitsubishi Electric Corporation
    Inventors: Nobuyuki Tomita, Yoichiro Mitani, Takanori Tanaka, Naoyuki Kawabata, Yoshihiko Toyoda, Takeharu Kuroiwa, Kenichi Hamano, Akihito Ono, Junji Ochi, Zempei Kawazu
  • SIC EPITAXIAL WAFER PRODUCTION METHOD
    Publication number: 20150354090
    Abstract: A method for manufacturing a SiC epitaxial wafer includes: a first step of, by supplying a Si supply gas and a C supply gas, performing a first epitaxial growth on a SiC bulk substrate with a 4H—SiC(0001) having an off-angle of less than 5° as a main surface at a first temperature of 1480° C. or higher and 1530° C. or lower; a second step of stopping the supply of the Si supply gas and the C supply gas and increasing a temperature of the SiC bulk substrate from the first temperature to a second temperature; and a third step of, by supplying the Si supply gas and the C supply gas, performing a second epitaxial growth on the SiC bulk substrate having the temperature increased in the second step at the second temperature.
    Type: Application
    Filed: December 26, 2013
    Publication date: December 10, 2015
    Applicant: Mitsubishi Electric Corporation
    Inventors: Nobuyuki TOMITA, Yoichiro MITANI, Takanori TANAKA, Naoyuki KAWABATA, Yoshihiko TOYODA, Takeharu KUROIWA, Kenichi HAMANO, Akihito ONO, Junji OCHI, Zempei KAWAZU
  • Ozone generating method
    Patent number: 6093289
    Abstract: There is provided a highly efficient and compact ozone generating apparatus in which a very short air gap of about 0.2 mm is formed at high accuracy. Non-discharge portions are dispersed and disposed to cover an entire discharge space, or a spacer is provided to form the non-discharge portion. Further, an elastic body is mounted on a back face of an electrode, thereby enhancing an air gap accuracy of the discharge space.
    Type: Grant
    Filed: December 22, 1998
    Date of Patent: July 25, 2000
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Masaki Kuzumoto, Youichiro Tabata, Shigenori Yagi, Kenji Yoshizawa, Masahiro Mukai, Junji Ochi, Tateki Ozawa
  • Ozone generating apparatus
    Patent number: 5948374
    Abstract: There is provided a highly efficient and compact ozone generating apparatus in which a very short air gap of about 0.2 mm is formed at high accuracy. Non-discharge portions are dispersed and disposed to cover an entire discharge space, or a spacer is provided to form the non-discharge portion. Further, an elastic body is mounted on a back face of an electrode, thereby enhancing an air gap accuracy of the discharge space.
    Type: Grant
    Filed: September 29, 1997
    Date of Patent: September 7, 1999
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Masaki Kuzumoto, Youichiro Tabata, Shigenori Yagi, Kenji Yoshizawa, Masahiro Mukai, Junji Ochi, Tateki Ozawa
  • Ozone generating apparatus
    Patent number: 5759497
    Abstract: There is provided a highly efficient and compact ozone generating apparatus in which a very short air gap of about 0.2 mm is formed at high accuracy. Non-discharge portions are dispersed and disposed to cover an entire discharge space, or a spacer is provided to form the non-discharge portion. Further, an elastic body is mounted on a back face of an electrode, thereby enhancing an air gap accuracy of the discharge space.
    Type: Grant
    Filed: April 17, 1995
    Date of Patent: June 2, 1998
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Masaki Kuzumoto, Youichiro Tabata, Shigenori Yagi, Kenji Yoshizawa, Masahiro Mukai, Junji Ochi, Tateki Ozawa