Abstract: A method of manufacturing a semiconductor device, including steps of: (a) bonding a support plate to a first main face of a wafer, the first main face having an integrated circuit disposed thereon; (b) thinning the wafer by polishing or grinding a second main face after step (a), the second main face being opposite to the first main face; (c) dividing the wafer into multiple chip bodies concurrently with or after step (b); (d) bonding multiple reinforcing layers to second main faces of the respective chip bodies after step (c); and (e) removing the support plate after step (d).

Abstract: A method of manufacturing a semiconductor device, including steps of: (a) bonding a support plate to a first main face of a wafer, the first main face having an integrated circuit disposed thereon; (b) thinning the wafer by polishing or grinding a second main face after step (a), the second main face being opposite to the first main face; (c) dividing the wafer into multiple chip bodies concurrently with or after step (b); (d) bonding multiple reinforcing layers to second main faces of the respective chip bodies after step (c); and (e) removing the support plate after step (d).

Abstract: A semiconductor device comprises a semiconductor substrate having a connection pad, an external connection electrode provided on the semiconductor substrate to be connected to the connection pad, and a sealing film provided to cover the external connection electrode, wherein an opening is provided in the sealing film to expose a center of the upper surface of the external connection electrode, and the sealing film is provided to cover an outer peripheral part of the upper surface of the external connection electrode.

Abstract: A semiconductor device includes a plurality of wiring lines which are provided on an upper side of a semiconductor substrate and which have connection pad portions, and columnar electrodes are provided on the connection pad portions of the wiring lines. A first sealing film is provided around the columnar electrodes on the upper side of the semiconductor substrate and on the wiring lines. A second sealing film is provided on the first sealing film. The first sealing film is made of a resin in which fillers are not mixed, and the second sealing film is made of a material in which fillers are mixed in a resin.

Abstract: A low dielectric constant film/wiring line stack structure made up of a stack of low dielectric constant films and wiring lines is provided in a region on the upper surface of the semiconductor substrate except for the peripheral part of this surface. The peripheral side surface of the low dielectric constant film/wiring line stack structure is covered with a sealing film. This provides a structure in which the low dielectric constant films do not easily come off. In this case, a lower protective film is provided on the lower surface of a silicon substrate to protect this lower surface against cracks.

Abstract: A semiconductor device comprises a semiconductor substrate having a connection pad, an external connection electrode provided on the semiconductor substrate to be connected to the connection pad, and a sealing film provided to cover the external connection electrode, wherein an opening is provided in the sealing film to expose a center of the upper surface of the external connection electrode, and the sealing film is provided to cover an outer peripheral part of the upper surface of the external connection electrode.

Abstract: In this manufacturing method of a semiconductor device, after a sealing film is applied over an entire surface of a semiconductor wafer and hardened, a second groove for forming a side-section protective film is formed in the sealing film and on the top surface side of the semiconductor wafer. In other words, the sealing film is formed in a state where a groove that causes strength reduction has not been formed on the top surface side of the semiconductor wafer. Since the second groove is formed on the top surface side of the semiconductor wafer after the sealing film is formed, the semiconductor wafer is less likely to warp when the sealing film, made of liquid resin, is hardened.

Abstract: A semiconductor device includes a plurality of wiring lines which are provided on an upper side of a semiconductor substrate and which have connection pad portions, and columnar electrodes are provided on the connection pad portions of the wiring lines. A first sealing film is provided around the columnar electrodes on the upper side of the semiconductor substrate and on the wiring lines. A second sealing film is provided on the first sealing film. The first sealing film is made of a resin in which fillers are not mixed, and the second sealing film is made of a material in which fillers are mixed in a resin.

Abstract: First, a trench is formed in parts of a semiconductor wafer, a sealing film and other elements corresponding to a dicing street and both sides thereof. In this state, the semiconductor wafer is separated into silicon substrates by the formation of the trench. Then, a resin protective film is formed on the bottom surface of each silicon substrate including the inner part of the trench. In this case, the semiconductor wafer is separated into the silicon substrates. However, a support plate is affixed to the upper surfaces of the columnar electrode and the sealing film via an adhesive layer. Therefore, when the resin protective film is formed, it is possible to prevent the entire workpiece including the separated silicon substrates from being easily warped.

Abstract: First, a trench is formed in parts of a semiconductor wafer, a sealing film and other elements corresponding to a dicing street and both sides thereof. In this state, the semiconductor wafer is separated into silicon substrates by the formation of the trench. Then, a resin protective film is formed on the bottom surface of each silicon substrate including the inner part of the trench. In this case, the semiconductor wafer is separated into the silicon substrates. However, a support plate is affixed to the upper surfaces of the columnar electrode and the sealing film via an adhesive layer. Therefore, when the resin protective film is formed, it is possible to prevent the entire workpiece including the separated silicon substrates from being easily warped.

Abstract: First, a trench formed in parts of a semiconductor wafer, a sealing film and others corresponding to a dicing street and both sides thereof. In this state, the semiconductor wafer is separated into silicon substrates by the formation of the trench. Then, a resin protective film is formed on the bottom surface of each silicon substrate including the inner part of the trench. In this case, the semiconductor wafer is separated into the silicon substrates. However, a support plate is affixed to the upper surfaces of the columnar electrode and the sealing film via an adhesive layer. Therefore, when the resin protective film is formed, it is possible to prevent the entirety including the separated silicon substrates from being easily warped.

Abstract: In this manufacturing method of a semiconductor device, after a sealing film is applied over an entire surface of a semiconductor wafer and hardened, a second groove for forming a side-section protective film is formed in the sealing film and on the top surface side of the semiconductor wafer. In other words, the sealing film is formed in a state where a groove that causes strength reduction has not been formed on the top surface side of the semiconductor wafer. Since the second groove is formed on the top surface side of the semiconductor wafer after the sealing film is formed, the semiconductor wafer is less likely to warp when the sealing film, made of liquid resin, is hardened.

Abstract: A low dielectric constant film/wiring line stack structure made up of a stack of low dielectric constant films and wiring lines is provided in a region on the upper surface of the semiconductor substrate except for the peripheral part of this surface. The peripheral side surface of the low dielectric constant film/wiring line stack structure is covered with a sealing film. This provides a structure in which the low dielectric constant films do not easily come off. In this case, a lower protective film is provided on the lower surface of a silicon substrate to protect this lower surface against cracks.

Abstract: A semiconductor device includes a plurality of wiring lines which are provided on an upper side of a semiconductor substrate and which have connection pad portions, Columnar electrodes are provided on the connection pad portions of the wiring lines. A first sealing film is provided around the columnar electrodes on the upper side of the semiconductor substrate and on the wiring lines. A second sealing film is provided on the first sealing film. The first sealing film is made of a resin in which fillers are not mixed, and the second sealing film is made of a material in which fillers are mixed in a resin.

Abstract: A printer head substrate having a silicon substrate on which heat generating elements and partitions are formed and an orifice plate which adhered to the partitions is placed on a stage of a helicon-wave dry etching system. Helicon-wave dry etching is performed while cooling the printer head substrate by allowing a coolant gas to be intervened between the substrate and the stage. This allows multiple orifices of a desired and adequate shape to be simultaneously and quickly bored in the orifice plate even if a thin film sheet having adhesive layers adhered to both sides thereof is used as the orifice plate, thereby improving the working efficiency.

Abstract: In a method of manufacturing an ink-jet printer which uses a thin film sheet having adhesive layers respectively formed on the top and bottom sides, as an orifice plate, orifices are formed in the ink-ejecting side of the thin film sheet after the adhesive layer on that ink-ejecting side has been removed. This prevents the formation of the orifices from being adversely affected by any otherwise residual of the adhesive layer and can thus permit accurate formation of orifices of a desired shape. Even if helicon-wave dry etching which ensure fast etching using high-power energy is used to form orifices, therefore, no adhesive layer is thermally expanded to be a residual so that multiple orifices can be formed simultaneously and quickly.

Abstract: A wiring substrate is disclosed, which has optimal characteristics for, for example, an active matrix type liquid crystal display device with a thin film transistor. Wiring formed of an Al-Nd-Ti alloy thin film is formed on a glass substrate, and if necessary, a semiconductor element which is electrically connected to the wiring is formed. In this case, the specific resistance of the Al-Nd-Ti alloy thin film is about 8 &mgr;&OHgr; cm if the Nd concentration is 0.75 at % and the Ti concentration is 0.5 at %. Further, even if the resultant substrate is heated at 240-270 C. after the formation of the wiring, occurrence of a hillock and a pinhole is substantially completely suppressed.

Abstract: A sputtering apparatus has a pressure resistant vessel, from which gas in discharged and into which gas for sputtering is supplied, a substrate disposed in the vessel to be formed with a film at one surface thereof, a target disposed oppositely to one surface of the substrate to be formed of a substance to become a material of the film, a magnet provided on the surface of the target oppositely to the substrate to generate a magnetic field for confining a plasma in the vicinity of the surface of the target opposed to the substrate, a plate-shaped anode disposed between the substrate and the target to be formed with an opening of the shape in which at least one side is larger than the profile of the substrate at a position opposed to the substrate, and a sputtering current supplier between the anode and the target. The anode is made of a conductor. An opening larger than the profile of the substrate is formed at a position of the anode opposed to the substrate.

Abstract: A tape cutting device includes a fixed blade fixed to a frame and a movable blade fixed to a manually pivotable lever. A printing operation to the print tape is performed by a print head and a platen. In this case, the tape runs by the rotation of the press roller and a tape feed roller, those being driven by a driving motor 2 through a power transmitting portion including a gear train. A gear of the gear train is associated with a tape cutting prevention mechanism including a stop lever. When the tape printing operation is carried out, the stop lever is movable to a first pivot position where the manually pivotable lever is abuttable on the stop lever to prevent the manually pivotable lever to be angularly rotated. When the tape is to be cut, the stop lever is moved to a second pivot position offset from the manually pivotable lever. Thus, the movable blade can be moved toward the fixed blade to cut the tape.

Abstract: A thin-film transistor comprises a gate electrode formed on an insulating substrate, a gate insulating film covering the gate electrode and the insulating substrate, an i-type semiconductor layer formed on the gate insulating film, and a source electrode and a drain electrode electrically connected to two ends of the i-type semiconductor layer, respectively. The gate electrode is made of aluminum alloy containing high-melting-point metal such as Ti and Ta and oxygen or nitrogen or both.