Abstract: The present invention provides a binder-resin composition (a) for binding filler particles to a surface of a separator substrate for a nonaqueous-electrolyte secondary battery. The use of this composition makes it possible to give a separator excellent in heat resistance. The binder-resin composition (a) is a resin composition including a water-soluble polymer (A) having a metal carboxylate group, and a water-soluble polymer (B) having a hydroxyl group, a carboxyl group or a sulfo group. However, the composition does not include a copolymer C that includes a structural unit (1) derived from vinyl alcohol and a structural unit (2) derived from a metal salt of acrylic acid.

Abstract: Present invention enables to easily exchange the electronic business cards, using smart phones or other type of handheld computers. First, the user sets up an electronic business card in his/her smart phone. This electronic business card is exchanged with other users through the smart phones. Thereby, the user can obtain other users' electronic business cards. The user can also scan a paper business card. The user can organize these received and scanned electronic business cards in his/her smart phone. The data related to the user's and other people's electronic business cards is backed up in a server. Furthermore, various useful functions can be called through the stored electronic business cards. Useful information related to the stored electronic business cards is also provided.

Abstract: A semiconductor device includes first, second, and third semiconductor layers each having multiple diffusion layers. The first direction widths of the first diffusion layers are the same. The amount of impurity within the first diffusion layers gradually increases from the bottom end towards the top end of the first semiconductor layer. The first direction widths of the second diffusion layers are the same. The amounts of impurity within the second diffusion layers are the same. The first direction widths of the third diffusion layers are narrower than the first direction widths of the first diffusion layers and the first direction widths of the second diffusion layers at the same level, and gradually become narrower from the bottom end towards the top end of the third semiconductor layer. The amount of impurity within the third diffusion layers are the same.

Abstract: In general, according to one embodiment, a power semiconductor device includes a first pillar region, a second pillar region, and an epitaxial layer of a first conductivity type on a first semiconductor layer. The first pillar region is composed of a plurality of first pillar layers of a second conductivity type and a plurality of second pillar layers of the first conductivity type alternately arranged along a first direction. The second pillar region is adjacent to the first pillar region along the first direction and includes a third pillar layer of the second conductivity type, a fourth pillar layer of the first conductivity type, and a fifth pillar layer of the second conductivity type in this order along the first direction. A plurality of second base layers of the second conductivity type electrically connected, respectively, onto the third pillar layer and the fifth pillar layer and spaced from each other.

Abstract: Provided is a spatial light modulation element comprising a substrate; a flat portion that is movable relative to the substrate; a flat board attached to the flat portion; and a dielectric film that is formed on a surface of the flat board opposite the surface on which the flat portion is attached, and reflects incident light. In the spatial light modulation element the dielectric film may include two or more types of dielectric layers that are repeatedly layered in an alternating manner, such that adjacent layers have different refractive indexes from each other. Furthermore, the dielectric film may be formed by alternately layering an Al2O3 film and a SiO2 film.

Abstract: In a side vehicle body structure of a vehicle, which is provided with a shoulder anchor part 2 for a seat belt, a shoulder reinforcement 9 of the shoulder anchor part 2 extends to the joint portion of a side body outer panel 7 and a quarter panel 8, and the shoulder reinforcement 9, the side body outer panel 7, and the quarter panel 8 are jointed together in the state in which the three elements are lapped together.

Abstract: A microactuator includes a base member, a plate-shaped member which is deflectively deformable, and a driving force applying device. A driving objective is connected to a predetermined portion of a deflectively deformable area of the plate-shaped member. The driving force applying device deflectively deforms the deflectively deformable area to change an inclination of the predetermined portion of the plate-shaped member between a first inclination and a second inclination; and a part of the plate-shaped member or a part of a member fixed to the plate-shaped member is brought into abutment against a member when the inclination is the first inclination, and the part of the plate-shaped member or the part of the member fixed to the plate-shaped member is brought into abutment against the base member when the inclination is the second inclination.

Abstract: A power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer provided thereon, mutually separated columnar third semiconductor layers of a second conductivity type extending within the second semiconductor layer, island-like fourth semiconductor layers of the second conductivity type provided on the third semiconductor layers, fifth semiconductor layers of the first conductivity type, sixth semiconductor layers of the second conductivity type, a gate electrode, a first electrode, and a second electrode. The fifth semiconductor layers are selectively provided on the fourth semiconductor layers. The sixth semiconductor layer electrically connects two adjacent fourth semiconductor layers. The first electrode is in electrical connection with the first semiconductor. The second electrode is in electrical connection with the fourth semiconductor layers and the fifth semiconductor layers via the openings in the gate electrode.

Abstract: In a side vehicle body structure of a vehicle, which is provided with a shoulder anchor part 2 for a seat belt, a shoulder reinforcement 9 of the shoulder anchor part 2 extends to the joint portion of a side body outer panel 7 and a quarter panel 8, and the shoulder reinforcement 9, the side body outer panel 7, and the quarter panel 8 are jointed together in the state in which the three elements are lapped together.

Abstract: The invention provides a method for producing a carbon material as a negative electrode active material that can dope and undope a sodium ion. The production method of a carbon material for a sodium secondary battery includes a step of heating at a temperature of 800 to 2500° C. a compound according to Formula (1), Formula (2) or Formula (3), and having 2 or more oxygen atoms, or a mixture of an aromatic derivative 1 having an oxygen atom in the molecule and an aromatic derivative 2 having a carboxyl group in the molecule and being different from the aromatic derivative 1.

Abstract: A pair of support members each having a spring section in a part thereof support a mirror element, and a pair of drive mechanisms arranged respectively corresponding to a pair of the support members transform the spring sections of the corresponding support members, thereby changing a distance between each of support points at which the support members support the mirror element and a base. Accordingly, the mirror element can be translated by driving all of the drive mechanisms, or the mirror element can be inclined with respect to the base by driving some of the drive mechanisms.

Abstract: In general, according to one embodiment, a power semiconductor device includes a first pillar region, a second pillar region, and an epitaxial layer of a first conductivity type on a first semiconductor layer. The first pillar region is composed of a plurality of first pillar layers of a second conductivity type and a plurality of second pillar layers of the first conductivity type alternately arranged along a first direction. The second pillar region is adjacent to the first pillar region along the first direction and includes a third pillar layer of the second conductivity type, a fourth pillar layer of the first conductivity type, and a fifth pillar layer of the second conductivity type in this order along the first direction. A plurality of second base layers of the second conductivity type electrically connected, respectively, onto the third pillar layer and the fifth pillar layer and spaced from each other.

Abstract: An image forming apparatus includes: a PDL analyzing unit that analyzes print data and obtains a drawing condition; a drawing unit that uses a type of dither selected from types of dither, prepared and associated with drawing conditions, according to the drawing condition analyzed, and generates output image data; an image forming unit; a fixing unit that fixes an image formed on a recording sheet by heating the image to a fixing temperature; a fixing control unit that controls the fixing temperature to a target value; and a database in which each of the types of dither is associated with the target value of fixing temperature for power saving. The fixing control unit obtains from the database the target value of fixing temperature corresponding to the type of dither used in the drawing unit and carries out control to conduct fixing at the target value thus obtained.

Abstract: In general, according to one embodiment, a power semiconductor device includes a first pillar region, a second pillar region, and an epitaxial layer of a first conductivity type on a first semiconductor layer. The first pillar region is composed of a plurality of first pillar layers of a second conductivity type and a plurality of second pillar layers of the first conductivity type alternately arranged along a first direction. The second pillar region is adjacent to the first pillar region along the first direction and includes a third pillar layer of the second conductivity type, a fourth pillar layer of the first conductivity type, and a fifth pillar layer of the second conductivity type in this order along the first direction. A plurality of second base layers of the second conductivity type electrically connected, respectively, onto the third pillar layer and the fifth pillar layer and spaced from each other.

Abstract: Driving is made possible in a moving range equivalent to or wider than the conventional range, with a driving voltage having a range smaller than a pull-in voltage. An electronic element includes a fixed portion provided with a first driving electrode and a first signal electrode, and a movable portion provided with a second driving electrode and a second signal electrode, movable with respect to the fixed portion and provided to generate a spring force to make restoration to a predetermined position. An electrostatic force is generated between the first and second driving electrodes by a voltage applied therebetween so that the electrostatic force resists against the spring force; and the first and second driving electrodes and the first and second signal electrodes are arranged so that the electrostatic force is generated in a direction in which a spacing distance between the first and second signal electrodes is widened.

Abstract: A semiconductor device includes first, second, and third semiconductor layers each having multiple diffusion layers. The first direction widths of the first diffusion layers are the same. The amount of impurity within the first diffusion layers gradually increases from the bottom end towards the top end of the first semiconductor layer. The first direction widths of the second diffusion layers are the same. The amounts of impurity within the second diffusion layers are the same. The first direction widths of the third diffusion layers are narrower than the first direction widths of the first diffusion layers and the first direction widths of the second diffusion layers at the same level, and gradually become narrower from the bottom end towards the top end of the third semiconductor layer. The amount of impurity within the third. diffusion layers are the same.

Abstract: A power semiconductor device includes a high resistance epitaxial layer having a first pillar region and a second pillar region as a drift layer. The first pillar region includes a plurality of first pillars of the first conductivity type and a plurality of second pillars of the second conductivity type disposed alternately along a first direction. The second pillar region is adjacent to the first pillar region along the first direction. The second pillar region includes a third pillar and a fourth pillar of a conductivity type opposite to a conductivity type of the third pillar. A net quantity of impurities in the third pillar is less than a net quantity of impurities in each of the plurality of first pillars. A net quantity of impurities in the fourth pillar is less than the net quantity of impurities in the third pillar.

Abstract: An image forming apparatus includes: a fixing portion for fixing an image on a recording material by heating the image carried on the recording material while conveying the recording material by a fixing nip; a first cooling portion for cooling one end region of the fixing portion with respect to a direction perpendicular to a recording material conveyance direction; and a second cooling portion for cooling the other end region of the fixing portion with respect to the direction perpendicular to the recording material conveyance direction. The first cooling portion and the second cooling portion are operable independently from each other.

Abstract: A power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer provided thereon, mutually separated columnar third semiconductor layers of a second conductivity type extending within the second semiconductor layer, island-like fourth semiconductor layers of the second conductivity type provided on the third semiconductor layers, fifth semiconductor layers of the first conductivity type, sixth semiconductor layers of the second conductivity type, a gate electrode, a first electrode, and a second electrode. The fifth semiconductor layers are selectively provided on the fourth semiconductor layers. The sixth semiconductor layer electrically connects two adjacent fourth semiconductor layers. The first electrode is in electrical connection with the first semiconductor. The second electrode is in electrical connection with the fourth semiconductor layers and the fifth semiconductor layers via the openings in the gate electrode.

Abstract: A negative electrode material for a non-aqueous electrolyte secondary battery, which comprises a negative electrode active material capable of absorbing and releasing a lithium ion and at least one salt selected from the group consisting of a carboxylic acid salt of an alkali metal, a carboxylic acid salt of an alkali earth metal, a sulfuric acid salt of an alkali metal, a sulfuric acid salt of an alkali earth metal, a boric acid salt of an alkali metal, a boric acid salt of an alkali earth metal, a phosphoric acid salt of an alkali metal and a phosphoric acid salt of an alkali earth metal.