Abstract: A method for fabricating a GAA nanosheet structure, comprising: forming at least two channel layers and at least one sacrificial layer alternately stacked on a substrate to form a channel stack; forming, on the substrate, a dummy gate astride the channel stack; forming a first sidewall on a surface of the dummy gate; etching the sacrificial layer to form a recess at a side surface of the channel stack; forming a second sidewall within the recess; forming a source and a drain at two sides of the channel stack; in response to a channel layer being in contact with the dummy gate, etching the dummy gate and the channel layer to expose the at least one sacrificial layer, and then etching the at least one sacrificial layer to form a space for manufacturing a surrounding gate; and forming a metallic surrounding gate in the space.

Abstract: The present disclosure provides a tea plant CsFAAH6 gene and use thereof. The tea plant CsFAAH6 gene has a nucleotide sequence shown in SEQ ID NO: 1 in sequence listing. A protein coded by the tea plant CsFAAH6 gene has an amino acid sequence shown in SEQ ID NO: 2 in the sequence listing. The CsFAAH6 is highly expressed in mature leaves of tea plants; there is significant negative correlation between theanine content in shoots (one bud and two leaves) of different tea cultivars in different months and expression level of the CsFAAH6; instantaneous silencing of CsFAAH6 expression can significantly increase the theanine content, indicating that CsFAAH6 has a physiological function of theanine degradation and a molecular mechanism thereof.

Abstract: A semiconductor device and a method for manufacturing the same. The method comprises: providing a substrate; forming a fin, a dummy gate, a first spacer, and a hard mask on a surface of the substrate; etching the substrate to form a groove located directly beneath the fin and running through a second spacer; forming, in the groove, a filling layer made of an insulating dielectric material, and thermal conductivity of the insulating dielectric material is higher than that of the substrate; removing the second spacer through etching; removing two opposite ends of each sacrificial layer to form cavities; filling the cavities to form inner spacers; forming a source and a drain on the substrate; forming a first dielectric layer; planarizing the first dielectric layer to expose the dummy gate; removing the dummy gate to release a channel comprising conductive nanosheets; forming a surrounding gate surrounding the conductive nanosheets.

Abstract: A lighting apparatus includes an optical component housing, an optical component and a light source. The optical component housing has an optical container and an entrance opening. The entrance opening is disposed on a lateral side of the optical component housing. The optical component housing has a light escape side. The lateral side is at a different plane as the light escape side. The optical component is detachably inserted into the optical container via the entrance opening. a cover manually operable to reveal the entrance opening for inserting the optical component and operable to conceal the entrance opening. a light source. A light is emitted from the light source passing through the optical component and escaped from the light escape side.

Abstract: The present disclosure provides a memory with a three-dimensional vertical structure and a manufacturing method. The memory includes: a semiconductor substrate, a first isolation layer, a first transistor and a second transistor. The first transistor includes a first source layer, a second isolation layer, a first drain layer, a third isolation layer, and a first through hole penetrating to the first source layer. A first active layer, a first gate dielectric layer and a first gate layer are on an inner sidewall of the first through hole. The second transistor includes a fourth isolation layer, a second source layer, a fifth isolation layer, and a second through hole penetrating to the first gate layer. A second active layer, a second gate dielectric layer and a second gate layer are on an inner sidewall of the second through hole. The second through hole is surrounded by the first through hole.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing a semiconductor device. The semiconductor device includes: a substrate; an insulating layer provided with a plurality of trenches extending in a first direction; a first electrode layer and a second electrode layer, where a spacing region is provided between the first electrode layer and the second electrode layer; a semiconductor layer covering bottom portions and sidewalls of all channel trenches, where the channel trenches are at least a part of trench bodies of the trenches located in the spacing region; a gate dielectric layer covering a surface of the semiconductor layer in the channel trenches on a side away from the bottom portions and the sidewalls of the channel trenches; a gate layer, where at least a part of the channel trenches are fully filled with the gate layer.

Abstract: Methods and devices include predicting future glucose and engagement levels for a user by receiving the user's glucose levels collected by a continuous glucose monitoring (CGM) device over a time period, receiving engagement data associated with the user, wherein the engagement data are associated with the user's medication intake, diet, physical activity, laboratory results, and education activity, determining a first glycemia risk index (GRI) value, determining, using a machine learning model and responsive to the user's glucose levels and the engagement data collected over the time period, one or more predictions for future glucose levels for the user including a prediction that a future GRI value is greater than or less than the first GRI value, and determining, using the machine learning model and responsive to the user's engagement data collected over the time period, one or more predictions for future engagement levels.

Abstract: The disclosed technology includes an air system including a first interlaced microchannel heat exchanger and a second interlaced microchannel heat exchanger. The air system can include a plurality of fluidly separated refrigerant circuits, and each of the refrigerant circuits can be configured to flow through the first interlaced microchannel heat exchanger and the second interlaced microchannel heat exchanger. The first interlaced microchannel heat exchanger can be located indoors, and the second interlaced microchannel heat exchanger can be located outdoors. Each of the refrigerant circuits can include its own compressor and expansion valve.

Abstract: The disclosed technology includes an air system including a first interlaced microchannel heat exchanger and a second interlaced microchannel heat exchanger. The air system can include a plurality of fluidly separated refrigerant circuits, and each of the refrigerant circuits can be configured to flow through the first interlaced microchannel heat exchanger and the second interlaced microchannel heat exchanger. The first interlaced microchannel heat exchanger can be located indoors, and the second interlaced microchannel heat exchanger can be located outdoors. Each of the refrigerant circuits can include its own compressor and expansion valve.

Abstract: The disclosed technology includes an air system including a first interlaced microchannel heat exchanger and a second interlaced microchannel heat exchanger. The air system can include a plurality of fluidly separated refrigerant circuits, and each of the refrigerant circuits can be configured to flow through the first interlaced microchannel heat exchanger and the second interlaced microchannel heat exchanger. The first interlaced microchannel heat exchanger can be located indoors, and the second interlaced microchannel heat exchanger can be located outdoors. Each of the refrigerant circuits can include its own compressor and expansion valve.

Abstract: Provided herein are materials and methods useful for facilitating transgene recombination. The present disclosure relates to, for example, techniques for manipulating recombination frequencies and generating organisms that contain multiple transgenic elements docking at the same locus on a single chromosome. The time consumed by the entire recombination process is proportional to the logarithm of the number of transgenes to be recombined.

Abstract: Methods and devices include managing a metabolic metric of a user by determining an activity behavior score for the user based on self-monitoring activity inputs and activity performance. A carbohydrate behavior score for the user may be determined based on self-monitoring carbohydrate inputs and carbohydrate performance. A medicine behavior score may be determined based on user consumption of medicine according to a medicine schedule. A user cluster may be identified from a plurality of clusters that are determined based on receiving initial user activity, carbohydrate and medicine behavior scores for a plurality of initial users. The plurality of user clusters may be generated by applying a clustering algorithm to the initial user activity, carbohydrate, medicine behavior scores. A metabolic metric trend may be determined based on the user cluster and used to generate a treatment plan for the user to improve a metabolic metric outcome.

Abstract: The disclosed technology includes an air system including a first interlaced microchannel heat exchanger and a second interlaced microchannel heat exchanger. The air system can include a plurality of fluidly separated refrigerant circuits, and each of the refrigerant circuits can be configured to flow through the first interlaced microchannel heat exchanger and the second interlaced microchannel heat exchanger. The first interlaced microchannel heat exchanger can be located indoors, and the second interlaced microchannel heat exchanger can be located outdoors. Each of the refrigerant circuits can include its own compressor and expansion valve.