Abstract: The present disclosure provides a diode-triggered bidirectional silicon controlled rectifier and circuit. The silicon controlled rectifier includes: a P-type substrate; a first P well formed in the P-type substrate, a first P-type doped region and a first N-type doped region being formed in the first P well; a second P well formed in the P-type substrate, a third N-type doped region and a fourth P-type doped region being formed in the second P well; and an N well formed in the P-type substrate, a second P-type doped region, a second N-type doped region and a third P-type doped region being formed in the N well. The second N-type doped region is electrically connected with a positive electrode of a diode string, and the first P-type doped region and the fourth P-type doped region are electrically connected with a negative electrode of the diode string.

Abstract: Embodiments of the present disclosure relate to an electrostatic protection structure and an electrostatic protection circuit. The electrostatic protection structure includes: a SCR structure and a trigger structure; the SCR structure includes: a well region of a second conductivity type and a first well of a first conductivity type region, a first-doped region of the first conductivity type, and a first-doped region of the second conductivity type; the trigger structure includes: a first-doped region of the second conductivity type, a second well region of the first conductivity type, a second-doped region of two conductivity types, a third-doped region of the second conductivity type, a fourth-doped region of the second conductivity type, and a first gate electrode.

Abstract: A discharge unit is connected to a power pad, a ground pad, and an I/O pad, and can discharge an electrostatic charge when an electrostatic pulse appears on any of the power pad, the ground pad, and the I/O pad. The discharge unit includes a first discharge unit and a second discharge unit, the first discharge unit is connected to the second discharge unit, the power pad, and the I/O pad, and the second discharge unit is connected to the ground pad and the I/O pad. The first discharge unit and/or the second discharge unit can discharge electrostatic charges on different pads, respectively.

Abstract: A fuse mounting structure and a batter system are provided according to the present application, the fuse mounting structure is used for mounting a fuse to a battery box, and includes a drawer and a fuse base; where the fuse base is mounted in the battery box, and the drawer is used for mounting the fuse; the drawer is provided with a guide device in a sliding fit with the fuse base, so as to guide the drawer to be inserted into the fuse base. According to the fuse mounting structure, the guide device is arranged on the drawer, the guide device guides the drawer with fuse when the drawer enters the fuse base, there is no need to align the plug-in holes, which realizes blind insertion of fuses and reduces the workload of fuse insertion.

Abstract: Provided is a composition for detecting a novel coronavirus, influenza A virus and influenza B virus; moreover, also provided are a kit including the composition, an application of the kit, and a method for detecting and typing viruses causing respiratory tract infection.

Abstract: Provided are DDX24 mutations and the use thereof, wherein the mutations include Glu271Lys, Lys11Glu and Arg436His. The mutations, i.e. Glu271Lys, Lys11Glu and Arg436His, of DDX24 gene are significantly associated with the development of blood vessels. It would result in vascular malformations by interfering with DDX24. In addition, the onset of human vascular malformations can be predicted by detecting the SNP sites of DDX24.