Abstract: A laser lift-off integrated apparatus includes a laser light source configured to perform laser lift-off on a wafer to undergo lift-off, a lift-off chamber configured to bear the wafer to undergo lift-off, a heater configured to provide temperature required by the wafer to undergo lift-off during a lift-off process, a profile measuring device configured to acquire surface profile information of the wafer to undergo lift-off, and a movable device configured to, according to the surface profile information acquired by the profile measuring device, adjust a height of the wafer to undergo lift-off such that a focus of the laser light source is at a position where the wafer to undergo lift-off is to undergo lift-off.

Abstract: The present disclosure provides a method for fabricating a self-supporting gallium nitride substrate, comprising: 1) providing a composite substrate including a sapphire substrate and a gallium nitride film; 2) forming a temporary bonding layer on the gallium nitride film; 3) bonding a transfer substrate to the composite substrate by means of the temporary bonding layer; 4) stripping the sapphire substrate by means of a laser stripping process; 5) performing weak bonding on a receiving substrate and the gallium nitride film, and detaching the transfer substrate from the gallium nitride film by invalidating the temporary bonding layer, and 6) epitaxially growing a gallium nitride epitaxial layer on the gallium nitride film, and invalidating the weak bonding by means of the lattice mismatch stress and/or the thermal mismatch stress between the gallium nitride film and the gallium nitride epitaxial layer and the receiving substrate, so as to realize separation between the gallium nitride film and the receiving s

Abstract: A laser lift-off integrated apparatus includes a laser light source configured to perform laser lift-off on a wafer to undergo lift-off, a lift-off chamber configured to bear the wafer to undergo lift-off, a heater configured to provide temperature required by the wafer to undergo lift-off during a lift-off process, a profile measuring device configured to acquire surface profile information of the wafer to undergo lift-off, and a movable device configured to, according to the surface profile information acquired by the profile measuring device, adjust a height of the wafer to undergo lift-off such that a focus of the laser light source is at a position where the wafer to undergo lift-off is to undergo lift-off.