Patents by Inventor Junjirou Sakai

Junjirou Sakai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Pattern transfer mask related to formation of dual damascene structure and method of forming dual damascene structure
    Publication number: 20060141774
    Abstract: A mask pattern (110) of a pattern transfer mask (101) includes a light shielding pattern (111) and a light transmitting pattern (112). The light shielding pattern (111) has a shape (pattern) subjected to undersizing near portions corresponding to via holes (51H). It is desirable to make undersizing to a greater degree in a region where the via holes (51H) occupy a larger area. While the mask (101) is intended for a negative-type resist, the light shielding pattern (111) and the light transmitting pattern (112) may be changed in position with each other in a mask intended for a positive-type resist.
    Type: Application
    Filed: February 24, 2006
    Publication date: June 29, 2006
    Applicant: Renesas Technology Corp.
    Inventor: Junjirou Sakai
  • Pattern transfer mask related to formation of dual damascene structure and method of forming dual damascene structure
    Patent number: 7033925
    Abstract: A mask pattern (110) of a pattern transfer mask (101) includes a light shielding pattern (111) and a light transmitting pattern (112). The light shielding pattern (111) has a shape (pattern) subjected to undersizing near portions corresponding to via holes (51H). It is desirable to make undersizing to a greater degree in a region where the via holes (51H) occupy a larger area. While the mask (101) is intended for a negative-type resist, the light shielding pattern (111) and the light transmitting pattern (112) may be changed in position with each other in a mask intended for a positive-type resist.
    Type: Grant
    Filed: May 22, 2003
    Date of Patent: April 25, 2006
    Assignee: Renesas Technology Corp.
    Inventor: Junjirou Sakai
  • Method of manufacturing electronic device and energy beam absorbing material
    Publication number: 20040214426
    Abstract: An EB curing process is performed on a photoresist (7), with an energy beam absorbing film (5) formed on a low dielectric constant interlayer insulator film (4).
    Type: Application
    Filed: April 27, 2004
    Publication date: October 28, 2004
    Applicant: RENESAS TECHNOLOGY CORP.
    Inventor: Junjirou Sakai
  • Pattern transfer mask related to formation of dual damascene structure and method of forming dual damascene structure
    Publication number: 20040083444
    Abstract: A mask pattern (110) of a pattern transfer mask (101) includes a light shielding pattern (111) and a light transmitting pattern (112). The light shielding pattern (111) has a shape (pattern) subjected to undersizing near portions corresponding to via holes (51H). It is desirable to make undersizing to a greater degree in a region where the via holes (51H) occupy a larger area. While the mask (101) is intended for a negative-type resist, the light shielding pattern (111) and the light transmitting pattern (112) may be changed in position with each other in a mask intended for a positive-type resist.
    Type: Application
    Filed: May 22, 2003
    Publication date: April 29, 2004
    Applicant: Renesas Technology Corp.
    Inventor: Junjirou Sakai