Patents by Inventor Junkai HUANG

Junkai HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LED for plant illumination
    Patent number: 10874057
    Abstract: A light-emitting diode includes a PN junction light-emitting portion over a substrate; wherein the PN junction light-emitting portion includes an alternating-layer structure of alternating a strained light-emitting layer and a barrier layer, wherein the strained light-emitting layer with a component formula of GaXIn(1-x)AsY1P(1-Y), 0<X<1 and 0<Y?0.05, and the barrier layer has a component formula of (AlaGa1-A)bIn(1-b)P, 0.3?a?1 and 0<b<1; when a current of 350 mA flows through the PN junction light-emitting portion in forward direction, the light-emitting diode has an output power at least 202.2 mW.
    Type: Grant
    Filed: June 13, 2020
    Date of Patent: December 29, 2020
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Chaoyu Wu, Chun-I Wu, Junkai Huang, Duxiang Wang, Hongliang Lin, Yi-Jui Huang, Ching-Shan Tao
  • LED FOR PLANT ILLUMINATION
    Publication number: 20200305354
    Abstract: A light-emitting diode includes a PN junction light-emitting portion over a substrate; wherein the PN junction light-emitting portion includes an alternating-layer structure of alternating a strained light-emitting layer and a barrier layer, wherein the strained light-emitting layer with a component formula of GaXIn(1-X)AsY1P(1-Y), 0<X<1 and 0<Y?0.05, and the barrier layer has a component formula of (AlaGa1-A)bIn(1-b)P, 0.3?a?1 and 0<b<1; when a current of 350 mA flows through the PN junction light-emitting portion in forward direction, the light-emitting diode has an output power at least 202.2 mW.
    Type: Application
    Filed: June 13, 2020
    Publication date: October 1, 2020
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Chaoyu WU, Chun-I WU, Junkai HUANG, Duxiang WANG, Hongliang LIN, Yi-Jui HUANG, Ching-Shan TAO
  • LED for plant illumination
    Patent number: 10716262
    Abstract: An epitaxial wafer for plant lighting light-emitting diodes (LED), the epitaxial wafer includes: a growth substrate; a first red-light epitaxial laminated layer; a distributed Bragg reflector (DBR) semiconductor laminated layer; and a second red-light epitaxial laminated layer; wherein: the first red-light epitaxial laminated layer comprises a first N-type ohmic contact layer, a first N-type covering layer, a first light-emitting layer, a first P-type covering layer, and a first P-type ohmic contact layer; and the second red-light epitaxial laminated layer comprises a second N-type ohmic contact layer, a second N-type covering layer, a second light-emitting layer, a second P-type covering layer, and a second P-type ohmic contact layer.
    Type: Grant
    Filed: November 16, 2018
    Date of Patent: July 21, 2020
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Chaoyu Wu, Chun-I Wu, Junkai Huang, Duxiang Wang, Hongliang Lin, Yi-Jui Huang, Ching-Shan Tao
  • LED FOR PLANT ILLUMINATION
    Publication number: 20190082614
    Abstract: An epitaxial wafer for plant lighting light-emitting diodes (LED), the epitaxial wafer includes: a growth substrate; a first red-light epitaxial laminated layer; a distributed Bragg reflector (DBR) semiconductor laminated layer; and a second red-light epitaxial laminated layer; wherein: the first red-light epitaxial laminated layer comprises a first N-type ohmic contact layer, a first N-type covering layer, a first light-emitting layer, a first P-type covering layer, and a first P-type ohmic contact layer; and the second red-light epitaxial laminated layer comprises a second N-type ohmic contact layer, a second N-type covering layer, a second light-emitting layer, a second P-type covering layer, and a second P-type ohmic contact layer.
    Type: Application
    Filed: November 16, 2018
    Publication date: March 21, 2019
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Chaoyu WU, Chun-I WU, Junkai HUANG, Duxiang WANG, Hongliang LIN, Yi-Jui HUANG, Ching-Shan TAO
  • LED for plant illumination
    Patent number: 10154626
    Abstract: A light-emitting diode (LED) for plant illumination includes a substrate, and a PN-junction light-emitting portion over the substrate. The light-emitting portion has a strained light-emitting layer with a component formula of GaXIn(1-X)AsYP(1-Y) (0<X<1 and 0<Y<1), and a barrier layer, forming a 2˜40-pair alternating-layer structure with the strained light-emitting layer.
    Type: Grant
    Filed: May 14, 2017
    Date of Patent: December 18, 2018
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Hongliang Lin, Chaoyu Wu, Yi-Jui Huang, Chun-I Wu, Ching-Shan Tao, Junkai Huang, Duxiang Wang
  • LED FOR PLANT ILLUMINATION
    Publication number: 20170250311
    Abstract: A light-emitting diode (LED) for plant illumination includes a substrate, and a PN-junction light-emitting portion over the substrate. The light-emitting portion has a strained light-emitting layer with a component formula of GaXIn(1-X)AsYP(1-Y) (0<X<1 and 0<Y<1), and a barrier layer, forming a 2˜40-pair alternating-layer structure with the strained light-emitting layer.
    Type: Application
    Filed: May 14, 2017
    Publication date: August 31, 2017
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Hongliang LIN, Chaoyu WU, Yi-Jui HUANG, Chun-I WU, Ching-Shan TAO, Junkai HUANG, Duxiang WANG