Patents by Inventor Junko Kobayashi
Junko Kobayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240132696Abstract: Provided is a cellulose acylate composition containing cellulose acylate particles and metal compound-containing particles. The total degree of substitution of the cellulose acylate is from 0.7 to 2.9. The metal compound is one or more types of compounds selected from an alkali metal compound and an alkaline earth metal compound. The composition is produced by adding one or more types of metal compounds selected from an alkali metal compound and an alkaline earth metal compound during and/or after removing a water-soluble polymer from a dispersion containing, as a dispersoid, cellulose acylate impregnated with a plasticizer to form cellulose acylate particles.Type: ApplicationFiled: February 15, 2022Publication date: April 25, 2024Applicant: DAICEL CORPORATIONInventors: Masaya OMURA, Keiko KOBAYASHI, Junko MAKINO
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Patent number: 11069524Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.Type: GrantFiled: February 27, 2020Date of Patent: July 20, 2021Assignee: LUMILEDS LLCInventors: Isaac Wildeson, Parijat Deb, Erik Charles Nelson, Junko Kobayashi
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Patent number: 11069525Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.Type: GrantFiled: April 14, 2020Date of Patent: July 20, 2021Assignee: LUMILEDS LLCInventors: Isaac Wildeson, Parijat Deb, Erik Charles Nelson, Junko Kobayashi
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Publication number: 20200243331Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.Type: ApplicationFiled: April 14, 2020Publication date: July 30, 2020Applicant: Lumileds LLCInventors: Isaac Wildeson, Parijat Deb, Erik Charles Nelson, Junko Kobayashi
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Publication number: 20200203158Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.Type: ApplicationFiled: February 27, 2020Publication date: June 25, 2020Applicant: Lumileds LLCInventors: Isaac Wildeson, Parijat Deb, Erik Charles Nelson, Junko Kobayashi
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Patent number: 10622206Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.Type: GrantFiled: February 13, 2019Date of Patent: April 14, 2020Assignee: Lumileds LLCInventors: Isaac Wildeson, Parijat Deb, Erik Charles Nelson, Junko Kobayashi
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Publication number: 20190189436Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.Type: ApplicationFiled: February 13, 2019Publication date: June 20, 2019Applicant: Lumileds LLCInventors: Isaac Wildeson, Parijat Deb, Erik Charles Nelson, Junko Kobayashi
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Patent number: 10236409Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.Type: GrantFiled: May 19, 2017Date of Patent: March 19, 2019Assignee: Lumileds LLCInventors: Isaac Wildeson, Parijat Deb, Erik Charles Nelson, Junko Kobayashi
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Publication number: 20170338369Abstract: Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.Type: ApplicationFiled: May 19, 2017Publication date: November 23, 2017Applicant: Lumileds LLCInventors: Isaac Wildeson, Parijat Deb, Erik Charles Nelson, Junko Kobayashi
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Publication number: 20110121358Abstract: A semiconductor structure includes a light emitting region, a p-type region disposed on a first side of the light emitting region, and an n-type region disposed on a second side of the light emitting region. At least 10% of a thickness of the semiconductor structure on the first side of the light emitting region comprises indium. Some examples of such a semiconductor light emitting device may be formed by growing an n-type region, growing a p-type region, and growing a light emitting layer disposed between the n-type region and the p-type region. The difference in temperature between the growth temperature of a part of the n-type region and the growth temperature of a part of the p-type region is at least 140° C.Type: ApplicationFiled: January 31, 2011Publication date: May 26, 2011Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: JUNKO KOBAYASHI, WERNER K. GOETZ, ANNELI MUNKHOLM
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Patent number: 7906357Abstract: A semiconductor structure includes a light emitting region, a p-type region disposed on a first side of the light emitting region, and an n-type region disposed on a second side of the light emitting region. At least 10% of a thickness of the semiconductor structure on the first side of the light emitting region comprises indium. Some examples of such a semiconductor light emitting device may be formed by growing an n-type region, growing a p-type region, and growing a light emitting layer disposed between the n-type region and the p-type region. The difference in temperature between the growth temperature of a part of the n-type region and the growth temperature of a part of the p-type region is at least 140° C.Type: GrantFiled: May 15, 2006Date of Patent: March 15, 2011Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLCInventors: Junko Kobayashi, Werner K. Goetz, Anneli Munkholm
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Publication number: 20070262342Abstract: A semiconductor structure includes a light emitting region, a p-type region disposed on a first side of the light emitting region, and an n-type region disposed on a second side of the light emitting region. At least 10% of a thickness of the semiconductor structure on the first side of the light emitting region comprises indium. Some examples of such a semiconductor light emitting device may be formed by growing an n-type region, growing a p-type region, and growing a light emitting layer disposed between the n-type region and the p-type region. The difference in temperature between the growth temperature of a part of the n-type region and the growth temperature of a part of the p-type region is at least 140° C.Type: ApplicationFiled: May 15, 2006Publication date: November 15, 2007Applicant: Philips Lumileds Lighting Company, LLCInventors: Junko Kobayashi, Werner Goetz, Anneli Munkholm
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Patent number: 6900067Abstract: A method of forming a light emitting device includes providing a sapphire substrate, growing an Al1?xGaxN first layer by vapor deposition on the substrate at a temperature between about 1000° C. and about 1180° C., and growing a III-nitride second layer overlying the first layer. The first layer may have a thickness between about 500 angstroms and about 5000 angstroms. In some embodiments, reaction between the group V precursor and the substrate is reduced by starting with a low molar ratio of group V precursor to group III precursor, then increasing the ratio during growth of the first layer, or by using nitrogen as an ambient gas.Type: GrantFiled: December 11, 2002Date of Patent: May 31, 2005Assignee: Lumileds Lighting U.S., LLCInventors: Junko Kobayashi, Werner K. Goetz
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Publication number: 20040246566Abstract: The present invention relates to an optical transmission system having a structure to enable signal transmission while maintaining superior transmission characteristics over a broader wavelength band. Signal light outputted from a signal light source has a positive chirp, and propagates through a transmission line fiber to an optical receiver, after being Raman-amplified by a lumped Raman amplifier. The lumped Raman amplifier includes, as a Raman amplification fiber, a high-nonlinearity fiber having a negative chromatic dispersion at a wavelength of the signal light and intentionally generating a self-phase modulation therein. The positive chirp of the signal light propagating through the high-nonlinearity fiber is effectively compensated by both of the negative chromatic dispersion and the self-phase modulation generated in the high-nonlinearity fiber.Type: ApplicationFiled: March 4, 2004Publication date: December 9, 2004Inventors: Toshiyuki Miyamoto, Masato Tanaka, Toshiaki Okuno, Junko Kobayashi, Masayuki Shigematsu, Masayuki Nishimura
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Publication number: 20040115853Abstract: A method of forming a light emitting device includes providing a sapphire substrate, growing an Al1−xGaxN first layer by vapor deposition on the substrate at a temperature between about 1000° C. and about 1180° C., and growing a III-nitride second layer overlying the first layer. The first layer may have a thickness between about 500 angstroms and about 5000 angstroms. In some embodiments, reaction between the group V precursor and the substrate is reduced by starting with a low molar ratio of group V precursor to group III precursor, then increasing the ratio during growth of the first layer, or by using nitrogen as an ambient gas.Type: ApplicationFiled: December 11, 2002Publication date: June 17, 2004Inventors: Junko Kobayashi, Werner K. Goetz
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Patent number: 6683327Abstract: A light emitting device including a nucleation layer containing aluminum is disclosed. The thickness and aluminum composition of the nucleation layer are selected to match the index of refraction of the substrate and device layers, such that 90% of light from the device layers incident on the nucleation layer is extracted into the substrate. In some embodiments, the nucleation layer is AlGaN with a thickness between about 1000 and about 1200 angstroms and an aluminum composition between about 2% and about 8%. In some embodiments, the nucleation layer is formed over a surface of a wurtzite substrate that is miscut from the c-plane of the substrate. In some embodiments, the nucleation layer is formed at high temperature, for example between 900° and 1200° C. In some embodiments, the nucleation layer is doped with Si to a concentration between about 3e18 cm−3 and about 5e19 cm−3.Type: GrantFiled: November 13, 2001Date of Patent: January 27, 2004Assignee: Lumileds Lighting U.S., LLCInventors: Michael R. Krames, Tetsuya Takeuchi, Junko Kobayashi
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Publication number: 20030089917Abstract: A light emitting device including a nucleation layer containing aluminum is disclosed. The thickness and aluminum composition of the nucleation layer are selected to match the index of refraction of the substrate and device layers, such that 90% of light from the device layers incident on the nucleation layer is extracted into the substrate. In some embodiments, the nucleation layer is AlGaN with a thickness between about 1000 and about 1200 angstroms and an aluminum composition between about 2% and about 8%. In some embodiments, the nucleation layer is formed over a surface of a wurtzite substrate that is miscut from the c-plane of the substrate. In some embodiments, the nucleation layer is formed at high temperature, for example between 900° and 1200° C. In some embodiments, the nucleation layer is doped with Si to a concentration between about 3e18 cm−3 and about 5e19 cm−3.Type: ApplicationFiled: November 13, 2001Publication date: May 15, 2003Inventors: Michael R. Krames, Tetsuya Takeuchi, Junko Kobayashi
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Patent number: 5741601Abstract: A polyamide film having been drawn at a draw ratio of 2 or more in at least one direction, which comprises a polyamide resin composition comprising from 90 to 99.99% by weight of a polyamide and from 10 to 0.01% by weight of a fluoromica-based mineral with swelling characteristics. The film is excellent in piercing pinhole strength and mechanical strength and heat dimensional stability after a retort treatment.Type: GrantFiled: January 31, 1996Date of Patent: April 21, 1998Assignee: Unitika Ltd.Inventors: Minoru Kishida, Masanobu Hioki, Junko Kobayashi