Abstract: A semiconductor apparatus comprising: a semiconductor substrate; a first surface of the semiconductor substrate on which a semiconductor device is formed; a second surface opposite to the first surface of the semiconductor substrate; a via hole penetrating through the semiconductor substrate from the first surface to second surface; an electrode, provided on the second surface, connecting to the via hole; wherein the electrode having a barrier layer for preventing any diffusion of a soldering material into the via hole.

Abstract: To provide a semiconductor device that is capable of transmitting heat evolved in an active element efficiently to a heat sink member, and a manufacturing method for the semiconductor device. One of the terminals (such as drain electrode) of an active element formed in a substrate of, for example, GaAs, is thermally contacted with a heat sink member via an insulating member of, for example, aluminum nitride, exhibiting thermally conductive and electrically insulating properties. The heat sink member may, for example, be an electrically conductive member connected to another terminal of the active element, or a heat sink of a package.

Abstract: A semiconductor apparatus comprising: a semiconductor substrate; a first surface of the semiconductor substrate on which a semiconductor device is formed; a second surface opposite to the first surface of the semiconductor substrate; a via hole penetrating through the semiconductor substrate from the first surface to second surface; an electrode, provided on the second surface, connecting to the via hole; wherein the electrode having a barrier layer for preventing any diffusion of a soldering material into the via hole.

Abstract: To provide a semiconductor device that is capable of transmitting heat evolved in an active element efficiently to a heat sink member, and a manufacturing method for the semiconductor device. One of the terminals (such as drain electrode) of an active element formed in a substrate of, for example, GaAs, is thermally contacted with a heat sink member via an insulating member of, for example, aluminum nitride, exhibiting thermally conductive and electrically insulating properties. The heat sink member may, for example, be an electrically conductive member connected to another terminal of the active element, or a heat sink of a package.

Abstract: To provide a semiconductor device that is capable of transmitting heat evolved in an active element efficiently to a heat sink member, and a manufacturing method for the semiconductor device. One of the terminals (such as drain electrode) of an active element formed in a substrate of, for example, GaAs, is thermally contacted with a heat sink member via an insulating member of, for example, aluminum nitride, exhibiting thermally conductive and electrically insulating properties. The heat sink member may, for example, be an electrically conductive member connected to another terminal of the active element, or a heat sink of a package.

Abstract: To provide a semiconductor device that is capable of transmitting heat evolved in an active element efficiently to a heat sink member, and a manufacturing method for the semiconductor device. One of the terminals (such as drain electrode) of an active element formed in a substrate of, for example, GaAs, is thermally contacted with a heat sink member via an insulating member of, for example, aluminum nitride, exhibiting thermally conductive and electrically insulating properties. The heat sink member may, for example, be an electrically conductive member connected to another terminal of the active element, or a heat sink of a package.

Abstract: To provide a semiconductor device that is capable of transmitting heat evolved in an active element efficiently to a heat sink member, and a manufacturing method for the semiconductor device. One of the terminals (such as drain electrode) of an active element formed in a substrate of, for example, GaAs, is thermally contacted with a heat sink member via an insulating member of, for example, aluminum nitride, exhibiting thermally conductive and electrically insulating properties. The heat sink member may, for example, be an electrically conductive member connected to another terminal of the active element, or a heat sink of a package.

Abstract: A source electrode, gate electrode, drain electrode, and a gate bus bar connected to said gate electrode are formed on a semiconductor chip. A field effect transistor unit constructed on the semiconductor chip is made up of three adjacent fingers each extending from the source electrode, gate electrode, and drain electrode. The source electrode is formed on the outer edge of the semiconductor chip from the obverse to the reverse surfaces of the semiconductor chip.