Abstract: In-plane uniformity of a film that is plated on a polygonal substrate is enhanced. An anode holder configured to hold an anode, a substrate holder configured to hold a polygonal substrate, a plating bath for accommodating the anode holder and the substrate holder, and dipping the anode and the substrate in a plating solution, and a control device for controlling a current that flows between the anode and the substrate are included. The substrate holder has a plurality of power feeding members that are disposed along respective sides of the polygonal substrate. The control device is configured to be able to control the current so that currents of at least two different values are simultaneously supplied to the plurality of power feeding members.

Abstract: In-plane uniformity of a film that is plated on a polygonal substrate is enhanced. An anode holder configured to hold an anode, a substrate holder configured to hold a polygonal substrate, a plating bath for accommodating the anode holder and the substrate holder, and dipping the anode and the substrate in a plating solution, and a control device for controlling a current that flows between the anode and the substrate are included. The substrate holder has a plurality of power feeding members that are disposed along respective sides of the polygonal substrate. The control device is configured to be able to control the current so that currents of at least two different values are simultaneously supplied to the plurality of power feeding members.

Abstract: In-plane uniformity of a film that is plated on a polygonal substrate is enhanced. An anode holder configured to hold an anode, a substrate holder configured to hold a polygonal substrate, a plating bath for accommodating the anode holder and the substrate holder, and dipping the anode and the substrate in a plating solution, and a control device for controlling a current that flows between the anode and the substrate are included. The substrate holder has a plurality of power feeding members that are disposed along respective sides of the polygonal substrate. The control device is configured to be able to control the current so that currents of at least two different values are simultaneously supplied to the plurality of power feeding members.

Abstract: A substrate electrolytic processing apparatus capable of leveling an electric-field shielding rate with no need to increase its size is disclosed. The substrate electrolytic processing apparatus includes a processing bath for holding a processing solution, a substrate holder for holding a substrate and capable of locating the substrate in the processing bath, a counter electrode disposed in the processing bath and serving as an electrode opposite to the substrate, and a paddle disposed between the counter electrode and the substrate and configured to reciprocate parallel to a surface of the substrate so as to agitate the processing solution. The paddle includes agitation rods disposed in an inner region of the paddle and agitation rods disposed in an outer region of the paddle, and gaps between the agitation rods disposed in the outer region is smaller than gaps between the agitation rods disposed in the inner region.

Abstract: In-plane uniformity of a film that is plated on a polygonal substrate is enhanced. An anode holder configured to hold an anode, a substrate holder configured to hold a polygonal substrate, a plating bath for accommodating the anode holder and the substrate holder, and dipping the anode and the substrate in a plating solution, and a control device for controlling a current that flows between the anode and the substrate are included. The substrate holder has a plurality of power feeding members that are disposed along respective sides of the polygonal substrate. The control device is configured to be able to control the current so that currents of at least two different values are simultaneously supplied to the plurality of power feeding members.

Abstract: There is provided an electroless plating apparatus which, despite using a high-productivity batch processing method, can reduce the amount of a liquid chemical brought out of a processing tank, thereby reducing the cleaning time in a cleaning step, and can perform flushing easily and quickly. The electroless plating apparatus includes a pre-plating treatment module including a pre-plating treatment tank, a plating module, and an inter-module substrate transport device. The pre-plating treatment tank is provided with a pre-plating treatment solution circulation line having a temperature control function for a pre-plating treatment solution. The plating tank is provided with a plating solution circulation line having a filter and a temperature control function for a plating solution. The plating solution circulation line is connected to a flushing line for flushing the interior of the plating solution circulation line and the interior of the plating tank.

Abstract: There is provided an electroless plating apparatus which, despite using a high-productivity batch processing method, can reduce the amount of a liquid chemical brought out of a processing tank, thereby reducing the cleaning time in a cleaning step, and can perform flushing easily and quickly. The electroless plating apparatus includes a pre-plating treatment module including a pre-plating treatment tank, a plating module, and an inter-module substrate transport device. The pre-plating treatment tank is provided with a pre-plating treatment solution circulation line having a temperature control function for a pre-plating treatment solution. The plating tank is provided with a plating solution circulation line having a filter and a temperature control function for a plating solution. The plating solution circulation line is connected to a flushing line for flushing the interior of the plating solution circulation line and the interior of the plating tank.

Abstract: A substrate electrolytic processing apparatus capable of leveling an electric-field shielding rate with no need to increase its size is disclosed. The substrate electrolytic processing apparatus includes a processing bath for holding a processing solution, a substrate holder for holding a substrate and capable of locating the substrate in the processing bath, a counter electrode disposed in the processing bath and serving as an electrode opposite to the substrate, and a paddle disposed between the counter electrode and the substrate and configured to reciprocate parallel to a surface of the substrate so as to agitate the processing solution. The paddle includes agitation rods disposed in an inner region of the paddle and agitation rods disposed in an outer region of the paddle, and gaps between the agitation rods disposed in the outer region is smaller than gaps between the agitation rods disposed in the inner region.

Abstract: A film thickness measuring method can carry out measurement of a thickness of an oxide film more simply in a shorter time. The film thickness measuring method includes determining a thickness of an oxide film or thin film of a metal or alloy by solely using a phase difference ?, measured by ellipsometry, based on a predetermined relationship between the phase difference ? and the thickness of the oxide film or thin film of the metal or alloy.

Abstract: An electrolytic processing apparatus, prior to carrying out plating directly on, e.g., a ruthenium film of a substrate using the ruthenium film as a seed layer, can securely remove a passive layer formed on a surface of the ruthenium film even when the substrate is a large-sized high-resistance substrate, such as a 300-mm wafer, thereby reducing the terminal effect during the subsequent plating, improving the quality of a plated film and enabling filling of a void-free plated film into a fine interconnect pattern.

Abstract: A substrate processing method can form highly-reliable interconnects with little current leakage between interconnects without causing significant damage to the interconnects. The substrate processing method comprises heating and reacting a contaminant on a substrate with a carboxylic acid in an atmosphere containing the carboxylic acid, thereby removing the contaminant.

Abstract: To provide an apparatus and a method capable of supplying a gas containing an evaporated reducing organic compound while strictly controlling the flow rate thereof to process a surface of a metal on a substrate without causing any deterioration of various types of films forming a semiconductor element with a simple apparatus configuration. The apparatus includes a process chamber 10 for keeping a substrate W therein, the process chamber 10 being gastight, an evacuation control system 20 for controlling the pressure in the process chamber 10, and a process gas supply system 30 for supplying a process gas containing a reducing organic compound to the process chamber 10.