Abstract: A light concentrator photovoltaic module includes a medium having a light receiving plane, a plurality of photovoltaic elements arranged in a spaced relationship with the light receiving plane, and a light reflecting plane for conducting light incident upon the light receiving plane but is not directly received by the photovoltaic elements to the photovoltaic elements.

Abstract: Disclosed is a photovoltaic module including a plurality of concentrators each having a light-incident plane and a reflection plane, and photo detectors. Each photo detector is in contact with one of the concentrators. The module is capable of effectively trapping light and effectively generating power throughout the year even if the module is established such that sunlight at the equinoxes is made incident on the light-incident planes not in a perpendicular manner but instead obliquely, for example, in the case where the module is established in contact with a curved plane of a roof, or the like.

Abstract: Disclosed is a photovoltaic module including a plurality of concentrators each having a light-incident plane and a reflection plane, and photo detectors each being in contact with one of the concentrators, which is capable of effectively trapping light and effectively generating power throughout the year even if the module is established such that sunlight at the equinoxes is made incident on the light-incident planes not perpendicularly but obliquely from the right, upper side, for example, in the case where the module is established in contact with a curved plane of a roof or the like.

Abstract: A light receiving element having excellent characteristics, including high sensitivity and high response speed, can be achieved by a light element comprising unit structures each having two pn junction semiconductor layers, and a lightly doped semiconductor layer having low impurity density, lower than those of the p-type regions and the n-type regions of the two pn junction semiconductor layers, and which is sandwiched between the two pn junction semiconductor layers. The p-type regions of the pn junction semiconductor layers are disposed opposite to each other on opposite sides of the lightly doped semiconductor layer, respectively, and the n-type regions of the pn junction semiconductor layers are disposed opposite to each other on the opposite sides of the lightly doped semiconductor layer, respectively.