Abstract: A semiconductor device and a manufacturing method thereof is provided. The device includes a semiconductor layer having a first and second surface opposing each other; a trench gate in the semiconductor layer, extends in a first direction parallel to the first and second surface, and from the first surface to an interior of the layer, and has a gate open end distant from the second surface; a source region of a first conductivity type and a channel region of a second conductivity type, orthographic projections of the source region and the channel region on the second surface at least partially overlap with each other in a depth direction of the trench gate, the source region having a source open end distant from the second surface, and the farther the source open end is from the second surface, the smaller a width of the source open end in the second direction.

Abstract: A semiconductor device and a method for manufacturing the same is provided. The semiconductor device includes: a semiconductor body having a first surface and a second surface, the semiconductor body includes: a depletion region, a drift region having a first conductivity type, an island region having the first conductivity type, a buffer region having the first conductivity type, the drift region is more proximal to the first surface of the semiconductor body than the buffer region, the depletion region is located within the drift region, and the island region is located within the drift region, an ion concentration of the first conductivity type of the island region is higher than an ion concentration of the first conductivity type of the drift region.