Patents by Inventor Junlin GE

Junlin GE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sense amplifier, memory, and method for controlling sense amplifier by configuring structures using switches
    Patent number: 11887655
    Abstract: A sense amplifier includes an amplification module and a control module electrically connected to the amplification module. Herein, in a case of reading a data in a memory cell on a first bit line, at an offset compensation stage of the sense amplifier, the control module is arranged to configure the amplification module to include a first diode structure, a first current mirror structure, and a first inverter with an input terminal and an output terminal connected to each other. In a case of reading a data in a memory cell on a second bit line, at the offset compensation stage of the sense amplifier, the control module is arranged to configure the amplification module to include a second diode structure, a second current mirror structure, and a second inverter with an input terminal and an output terminal connected to each other.
    Type: Grant
    Filed: September 14, 2021
    Date of Patent: January 30, 2024
    Assignees: ANHUI UNIVERSITY, CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventors: Wenjuan Lu, Junlin Ge, Jun He, Zhan Ying, Xin Li, Kanyu Cao, Chunyu Peng, Zhiting Lin, Xiulong Wu, Junning Chen
  • Sense amplifier, memory and method for controlling a sense amplifier
    Patent number: 11423957
    Abstract: The present disclosure provides a sense amplifier, a memory, and a method for controlling a sense amplifier, relating to the technical field of semiconductor memories. The sense amplifier comprises: an amplification module; and a control module, electrically connected to the amplification module; wherein, in an offset compensation stage of the sense amplifier, the control module is used to configure the amplification module to comprise a diode structure, a current mirror structure, and an inverter with an input and an output connected together; and in a first amplification stage of the sense amplifier, the control module is used to configure the amplification module as an inverter. The present disclosure can realize the offset compensation of the sense amplifier, thereby improving the performance of semiconductor memories.
    Type: Grant
    Filed: December 25, 2020
    Date of Patent: August 23, 2022
    Assignees: ANHUI UNIVERSITY, CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventors: Chunyu Peng, Junlin Ge, Jun He, Zhan Ying, Xin Li, Kanyu Cao, Wenjuan Lu, Zhiting Lin, Xiulong Wu, Junning Chen
  • SENSE AMPLIFIER, MEMORY AND METHOD FOR CONTROLLING A SENSE AMPLIFIER
    Publication number: 20220208235
    Abstract: The present disclosure provides a sense amplifier, a memory, and a method for controlling a sense amplifier, relating to the technical field of semiconductor memories. The sense amplifier comprises: an amplification module; and a control module, electrically connected to the amplification module; wherein, in an offset compensation stage of the sense amplifier, the control module is used to configure the amplification module to comprise a diode structure, a current mirror structure, and an inverter with an input and an output connected together; and in a first amplification stage of the sense amplifier, the control module is used to configure the amplification module as an inverter. The present disclosure can realize the offset compensation of the sense amplifier, thereby improving the performance of semiconductor memories.
    Type: Application
    Filed: December 25, 2020
    Publication date: June 30, 2022
    Inventors: Chunyu PENG, Junlin GE, Jun HE, Zhan YING, Xin LI, Kanyu CAO, Wenjuan LU, Zhiting LIN, Xiulong WU, Junning CHEN
  • SENSE AMPLIFIER, MEMORY, AND METHOD FOR CONTROLLING SENSE AMPLIFIER
    Publication number: 20220051713
    Abstract: A sense amplifier includes an amplification module and a control module electrically connected to the amplification module. Herein, in a case of reading a data in a memory cell on a first bit line, at an offset compensation stage of the sense amplifier, the control module is arranged to configure the amplification module to include a first diode structure, a first current mirror structure, and a first inverter with an input terminal and an output terminal connected to each other. In a case of reading a data in a memory cell on a second bit line, at the offset compensation stage of the sense amplifier, the control module is arranged to configure the amplification module to include a second diode structure, a second current mirror structure, and a second inverter with an input terminal and an output terminal connected to each other.
    Type: Application
    Filed: September 14, 2021
    Publication date: February 17, 2022
    Inventors: Wenjuan LU, Junlin GE, Jun HE, Zhan YING, Xin LI, Kanyu CAO, Chunyu PENG, Zhiting LIN, Xiulong WU, Junning CHEN