Patents by Inventor Junlin Liu
Junlin Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240079509Abstract: A solar cell, a textured surface structure and a method for preparing the same are provided. The textured surface structure is formed on a surface of a silicon wafer, and the surface has a grid line covered area and a light-receiving exposure area. The textured surface structure includes a first textured surface formed on the grid line covered area, and a second textured surface formed on the light-receiving exposure area. The texture size of the first textured surface is larger than the texture size of the second textured surface.Type: ApplicationFiled: April 27, 2022Publication date: March 7, 2024Inventors: Lin SUN, Junlin DU, Gongbing CHEN, Lin ZHANG, Xiuqing YANG, Xiangfei LIU, Tao YAN, Deng PAN
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Publication number: 20240012897Abstract: Provided are a verification code processing method and apparatus, and a device and a storage medium. The method comprises: upon receiving a trigger operation for verification code display, firstly acquiring a verification code image and verification code input prompt information; and then displaying the verification code image and the verification code input prompt information for verification code input. In the embodiments of the present disclosure, since a verification code image comprises one or more verification codes, at least one verification code is divided into a plurality of areas, and at least two areas are different in color, the overall structure of the verification code is destroyed, thereby improving the OCR resistance performance of the verification code, and achieving the purpose of effectively intercepting malicious behavior.Type: ApplicationFiled: November 1, 2021Publication date: January 11, 2024Inventors: Yuanyi WU, Chongwen SHI, Peng YANG, Wenqi XIE, Xuebin ZHU, Wenbin DUAN, Yayu JIA, Xinyu WANG, Jiahui LI, Qiaoyou LUO, Wei LUO, Yongli QIN, Ming YAN, Junlin LIU
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Patent number: 11781222Abstract: The present invention relates to a photoelectric film and a fabrication method thereof, and in particular, to a layered polycrystalline lead selenide (PbSe) film and a fabrication method thereof. The fabrication method mainly includes: (1) fabricating a dense PbSe layer on a substrate through chemical bath deposition (CBD); (2) fabricating a loose plumbonacrite (Pb10O(OH)6(CO3)6) layer on the dense PbSe layer through CBD; (3) placing a sample with the dense PbSe layer and the Pb10O(OH)6(CO3)6 layer in a selenium ion-containing solution to allow an ion exchange reaction to finally form the layered polycrystalline PbSe film. The fabrication method has the advantages of simple process, low cost, and high controllability.Type: GrantFiled: March 25, 2021Date of Patent: October 10, 2023Assignee: Jiangsu UniversityInventors: Guiwu Liu, Junlin Liu, Yuan Zhu, Guanjun Qiao, Xiangzhao Zhang, Quanjiang Lv, Haigang Hou, Jian Yang
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Publication number: 20220396879Abstract: The present invention relates to a photoelectric film and a fabrication method thereof, and in particular, to a layered polycrystalline lead selenide (PbSe) film and a fabrication method thereof. The fabrication method mainly includes: (1) fabricating a dense PbSe layer on a substrate through chemical bath deposition (CBD); (2) fabricating a loose plumbonacrite (Pb10O(OH)6(CO3)6) layer on the dense PbSe layer through CBD; (3) placing a sample with the dense PbSe layer and the Pb10O(OH)6(CO3)6 layer in a selenium ion-containing solution to allow an ion exchange reaction to finally form the layered polycrystalline PbSe film. The fabrication method has the advantages of simple process, low cost, and high controllability.Type: ApplicationFiled: March 25, 2021Publication date: December 15, 2022Applicant: Jiangsu UniversityInventors: Guiwu LIU, Junlin LIU, Yuan ZHU, Guanjun QIAO, Xiangzhao ZHANG, Quanjiang LV, Haigang HOU, Jian YANG
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Patent number: 10453372Abstract: A method for driving a display panel and a display panel thereof. Method comprises: A driving circuit regulates electrical levels of the driving signals in a driving cycle transmitting to a first/second/third charging control unit corresponding to a first/second/third color sub-pixel unit respectively. Therefore, the first color sub-pixel unit is charged via a first thin-film-transistor of the first charging control unit by charging data, the second color sub-pixel unit is charged via a first thin-film-transistor and a second thin-film-transistor of the second charging control unit by said charging data, and the third color sub-pixel unit is charged via a first thin-film-transistor of the third charging control unit by charging data. Therefore, electrical level switching of driving signals by driver circuit is reduced resulting reduced power consumption of driving display panel.Type: GrantFiled: November 25, 2017Date of Patent: October 22, 2019Assignee: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Junlin Liu, Xiang Yang, Chun-hung Huang
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Publication number: 20190130810Abstract: A method for driving a display panel and a display panel thereof. Method comprises: A driving circuit regulates electrical levels of the driving signals in a driving cycle transmitting to a first/second/third charging control unit corresponding to a first/second/third color sub-pixel unit respectively. Therefore, the first color sub-pixel unit is charged via a first thin-film-transistor of the first charging control unit by charging data, the second color sub-pixel unit is charged via a first thin-film-transistor and a second thin-film-transistor of the second charging control unit by said charging data, and the third color sub-pixel unit is charged via a first thin-film-transistor of the third charging control unit by charging data. Therefore, electrical level switching of driving signals by driver circuit is reduced resulting reduced power consumption of driving display panel.Type: ApplicationFiled: November 25, 2017Publication date: May 2, 2019Inventors: Junlin LIU, Xiang YANG, Chun-hung HUANG
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Patent number: 8354665Abstract: A light-emitting device includes a conductive substrate (320), a multilayer semiconductor structure situated above the conductive substrate including a n-type doped semiconductor layer (308), a p-type doped semiconductor layer (312) situated above the n-type doped semiconductor layer (308), and a MQW active layer (310) situated between the p-type and n-type doped semiconductor layer (308,312). The multilayer semiconductor structure is divided by grooves (300) to form a plurality of independent light-emitting mesas (304,306). At least one light-emitting mesa (304,306) comprises a color conversion layer (324,326).Type: GrantFiled: August 19, 2008Date of Patent: January 15, 2013Assignee: Lattice Power (JIANGXI) CorporationInventors: Fengyi Jiang, Li Wang, Junlin Liu, Yingwen Tang
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Publication number: 20120037883Abstract: A light-emitting device includes a conductive substrate (320), a multilayer semiconductor structure situated above the conductive substrate including a n-type doped semiconductor layer (308), a p-type doped semiconductor layer (312) situated above the n-type doped semiconductor layer (308), and a MQW active layer (310) situated between the p-type and n-type doped semiconductor layer (308,312). The multilayer semiconductor structure is divided by grooves (300) to form a plurality of independent light-emitting mesas (304,306). At least one light-emitting mesa (304,306) comprises a color conversion layer (324,326).Type: ApplicationFiled: August 19, 2008Publication date: February 16, 2012Applicant: LATTICE POWER (JIANGXI) CORPORATIONInventors: Fengyi Jiang, Li Wang, Junlin Liu, Yingwen Tang
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Patent number: 8044416Abstract: One embodiment of the present invention provides a method for fabricating a high-power light-emitting diode (LED). The method includes etching grooves on a growth substrate, thereby forming mesas on the growth substrate. The method further includes fabricating indium gallium aluminum nitride (InGaAlN)-based LED multilayer structures on the mesas on the growth substrate, wherein a respective mesa supports a separate LED structure. In addition, the method includes bonding the multilayer structures to a conductive substrate. The method also includes removing the growth substrate. Furthermore, the method includes depositing a passivation layer and an electrode layer above the InGaAlN multilayer structures, wherein the passivation layer covers the sidewalls and bottom of the grooves.Type: GrantFiled: March 25, 2008Date of Patent: October 25, 2011Assignee: Lattice Power (Jiangxi) CorporationInventors: Li Wang, Fengyi Jiang, Yingwen Tang, Junlin Liu
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Publication number: 20110147704Abstract: A light-emitting device and method for the fabrication thereof. The device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and a multi-quantum-well (MQW) situated between the first and the second doped semiconductor layer. The device also includes a first electrode coupled to the first doped semiconductor layer and a second electrode coupled to the second doped semiconductor layer. The device further includes a first passivation layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and the part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode. The first passivation layer is formed through an oxidation technique. The device further includes a second passivation layer overlaying the first passivation layer.Type: ApplicationFiled: August 19, 2008Publication date: June 23, 2011Applicant: LATTICE POWER (JIANGXI) CORPORATIONInventors: Fengyi Jiang, Junlin Liu, Li Wang
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Publication number: 20110147705Abstract: One embodiment of the present invention provides a semiconductor light-emitting device which includes: a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, a multi-quantum-well (MQW) active layer situated between the first and the second doped semiconductor layers. The device further includes a first electrode coupled to the first doped semiconductor layer, a second electrode coupled to the second doped semiconductor layer, and a silicone protective layer which substantially covers the sidewalls of the first and second doped semiconductor layers, the MQW active layer, and part of the horizontal surface of the second doped semiconductor layer which is not covered by the second electrode.Type: ApplicationFiled: August 19, 2008Publication date: June 23, 2011Applicant: LATTICE POWER (JIANGXI) CORPORATIONInventors: Fengyi Jiang, Junlin Liu, Li Wang
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Patent number: 7943942Abstract: A light-emitting device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped layer and a first passivation layer situated between the first electrode and the first doped layer in areas other than an ohmic-contact area. The first passivation layer substantially insulates the first electrode from edges of the first doped layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped layer and a second passivation layer which substantially covers the sidewalls of the first and second doped layers, the MQW active layer, and the horizontal surface of the second doped layer.Type: GrantFiled: March 25, 2008Date of Patent: May 17, 2011Assignee: Lattice Power (JIANGXI) CorporationInventors: Fengyi Jiang, Junlin Liu, Li Wang
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Publication number: 20110001120Abstract: A light-emitting device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped layer, and a multi-quantum-well (MQW) active layer situated between the first and the second doped layers. The device also includes a first electrode coupled to the first doped layer and a first passivation layer situated between the first electrode and the first doped layer in areas other than an ohmic-contact area. The first passivation layer substantially insulates the first electrode from edges of the first doped layer, thereby reducing surface recombination. The device further includes a second electrode coupled to the second doped layer and a second passivation layer which substantially covers the sidewalls of the first and second doped layers, the MQW active layer, and the horizontal surface of the second doped layer.Type: ApplicationFiled: March 25, 2008Publication date: January 6, 2011Applicant: LATTICE POWER (JIANGXI) CORPORATIONInventors: Fengyi Jiang, Junlin Liu, Li Wang
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Publication number: 20100176404Abstract: One embodiment of the present invention provides a method for fabricating a high-power light-emitting diode (LED). The method includes etching grooves on a growth substrate, thereby forming mesas on the growth substrate. The method further includes fabricating indium gallium aluminum nitride (InGaAlN)-based LED multilayer structures on the mesas on the growth substrate, wherein a respective mesa supports a separate LED structure. In addition, the method includes bonding the multilayer structures to a conductive substrate. The method also includes removing the growth substrate. Furthermore, the method includes depositing a passivation layer and an electrode layer above the InGaAlN multilayer structures, wherein the passivation layer covers the sidewalls and bottom of the grooves.Type: ApplicationFiled: March 25, 2008Publication date: July 15, 2010Applicant: LATTICE POWER (JIANGXI) CORPORATIONInventors: Li Wang, Fengyi Jiang, Yingwen Tang, Junlin Liu
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Patent number: 7741632Abstract: One embodiment of the present invention provides an InGaAlN-based semiconductor light-emitting device which comprises an InGaAlN-based semiconductor multilayer structure and a carbon-based substrate which supports InGaAlN-based semiconductor multilayer structure, wherein the carbon-based substrate comprises at least one carbon-based layer. This carbon-based substrate has both high thermal conductivity and low electrical resistivity.Type: GrantFiled: July 16, 2007Date of Patent: June 22, 2010Assignee: Lattice Power (Jiangxi) CorporationInventors: Chuanbing Xiong, Fengyi Jiang, Li Wang, Yingwen Tang, Changda Zheng, Junlin Liu, Weihua Liu, Guping Wang
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Publication number: 20080265265Abstract: One embodiment of the present invention provides an InGaAlN-based semiconductor light-emitting device which comprises an InGaAlN-based semiconductor multilayer structure and a carbon-based substrate which supports InGaAlN-based semiconductor multilayer structure, wherein the carbon-based substrate comprises at least one carbon-based layer. This carbon-based substrate has both high thermal conductivity and low electrical resistivity.Type: ApplicationFiled: July 16, 2007Publication date: October 30, 2008Applicant: LATTICE POWER (JIANGXI) CORPORATIONInventors: Chuanbing Xiong, Fengyi Jiang, Li Wang, Yingwen Tang, Changda Zheng, Junlin Liu, Weihua Liu, Guping Wang