Abstract: An improved semiconductor device results from the use of an amorphous silicon layer in a gate structure disposed between a dielectric layer and an upper conductive layer such as a control gate. Both a semiconductor device and method of manufacturing a semiconductor device using an amorphous silicon layer are provided.

Abstract: A grinding machine with 5-axis for cutters is disclosed, the grinding machine includes a grinding machine base (12) with an circular upper horizontal surface and a pillar (56) provided on one side of the grinding machine base, the pillar is curved with a radian of 180° along a side edge of the base, a groove body (63) on the circular base is enclosed by a curved vertical plate on the another side edge, and the height of vertical plate is lower than that of the pillar.

Abstract: A vertical turning-milling complex machining center comprises a horizontally-arranged bed body (6) and a vertically-arranged column (7). The bed body (6) is provided with an X-axis lateral supporting linear track (2) and an X-axis guide screw (5). The bed body (6) is also provided with a uniaxial rotating table (1) which can reciprocate and is driven directly by a first external rotor torque motor. The column (7) is vertically provided with a Z-axis lateral supporting linear track (10), a Z-axis guide screw (9) and a crossbeam (11) that reciprocates up and down. The crossbeam (11) is provided with a transverse Y-axis linear track (13), a Y-axis guide screw (12) and a single-pendulum milling head seat frame that can reciprocate along the Y-axis guide screw (12). The single-pendulum milling head is driven directly by a second external rotor torque motor.

Abstract: A grinding machine with 5-axis for cutters is disclosed, the grinding machine includes a grinding machine base (12) with an circular upper horizontal surface and a pillar (56) provided on one side of the grinding machine base, the pillar is curved with a radian of 180° along a side edge of the base, a groove body (63) on the circular base is enclosed by a curved vertical plate on the another side edge, and the height of vertical plate is lower than that of the pillar.

Abstract: An improved semiconductor device results from the use of an amorphous silicon layer in a gate structure disposed between a dielectric layer and an upper conductive layer such as a control gate. Both a semiconductor device and method of manufacturing a semiconductor device using an amorphous silicon layer are provided.

Abstract: A vertical turning-milling complex machining center comprises a horizontally-arranged bed body (6) and a vertically-arranged column (7). The bed body (6) is provided with an X-axis lateral supporting linear track (2) and an X-axis guide screw (5). The bed body (6) is also provided with a uniaxial rotating table (1) which can reciprocate and is driven directly by a first external rotor torque motor. The column (7) is vertically provided with a Z-axis lateral supporting linear track (10), a Z-axis guide screw (9) and a crossbeam (11) that reciprocates up and down. The crossbeam (11) is provided with a transverse Y-axis linear track (13), a Y-axis guide screw (12) and a single-pendulum milling head seat frame that can reciprocate along the Y-axis guide screw (12). The single-pendulum milling head is driven directly by a second external rotor torque motor.