Abstract: The present invention provides a wearable device for monitoring blood-pressure.

Abstract: In a method of inspection of a semiconductor substrate a first beam of light is split into two or more second beams of light. The two or more second beams of light are respectively transmitted onto a first set of two or more first locations on top of the semiconductor substrate. In response to the transmitted two or more second beams of light, two or more reflected beams of light from the first set of two or more first locations are received. The received two or more reflected beams of light are detected to generate two or more detected signals. The two or more detected signals are analyzed to determine whether a defect exists at the set of the two or more first locations.

Abstract: In a method of inspection of a semiconductor substrate a first beam of light is split into two or more second beams of light. The two or more second beams of light are respectively transmitted onto a first set of two or more first locations on top of the semiconductor substrate. In response to the transmitted two or more second beams of light, two or more reflected beams of light from the first set of two or more first locations are received. The received two or more reflected beams of light are detected to generate two or more detected signals. The two or more detected signals are analyzed to determine whether a defect exists at the set of the two or more first locations.

Abstract: A method for preparing a carbide protective layer comprises: (A) mixing a carbide powder, an organic binder, an organic solvent and a sintering aid to form a slurry; (B) spraying the slurry on a surface of a graphite component to form a composite component; (C) subjecting the composite component to a cold isostatic pressing densification process; (D) subjecting the composite component to a constant temperature heat treatment; (E) repeating steps (B)-(D) until a coating is formed on a surface of the composite component; (F) subjecting the coating to a segmented sintering process; (G) obtaining a carbide protective layer used for the surface of the composite component. Accordingly, while the carbide protective layer can be completed by using the wet cold isostatic pressing densification process and the cyclic multiple superimposition method, so that it can improve the corrosion resistance in the silicon carbide crystal growth process environment.

Abstract: Provided is a manufacturing method of circuit board, including a first substrate, a second substrate, a third substrate, a fourth substrate, multiple conductive structures, and a conductive via structure. The third substrate has an opening and includes a first dielectric layer. The opening penetrates the third substrate, and the first dielectric layer fills the opening. Multiple conductive structures are formed so that the first substrate, the second substrate, the third substrate, and the fourth substrate are electrically connected through the conductive structures to define a ground path. A conductive via structure is formed to penetrate the first substrate, the second substrate, the first dielectric layer of the third substrate, and the fourth substrate. The conductive via structure is electrically connected to the first substrate and the fourth substrate to define a signal path, and the ground path surrounds the signal path.

Abstract: A method for preparing a carbide protective layer comprises: (A) mixing a carbide powder, an organic binder, an organic solvent and a sintering aid to form a slurry; (B) spraying the slurry on a surface of a graphite component to form a composite component; (C) subjecting the composite component to a cold isostatic pressing densification process; (D) subjecting the composite component to a constant temperature heat treatment; (E) repeating steps (B)-(D) until a coating is formed on a surface of the composite component; (F) subjecting the coating to a segmented sintering process; (G) obtaining a carbide protective layer used for the surface of the composite component. Accordingly, while the carbide protective layer can be completed by using the wet cold isostatic pressing densification process and the cyclic multiple superimposition method, so that it can improve the corrosion resistance in the silicon carbide crystal growth process environment.

Abstract: The present invention provides a wearable device for monitoring blood-pressure.

Abstract: The present invention provides a wearable device for monitoring blood-pressure.

Abstract: Devices and methods for monitoring blood pressure with a wearable device, which includes a contact member that concentrates radially directed tissue movement produced by arterial motion into a relatively small spot to compress the strain device. This concentration significantly increases the sensitivity of the force detecting device and allows further miniaturization of the device.

Abstract: A semiconductor structure includes a wafer comprising a plurality of viewing fields defined thereon, a plurality of dies defined by a scribe line formed in each viewing field, a plurality of mark patterns formed in the scribe line, and a plurality of anchor pattern respectively formed in the review fields, the anchor patterns being different from the mark patterns.

Abstract: The present invention provides a wearable device for monitoring blood-pressure.

Abstract: A semiconductor structure includes a wafer comprising a plurality of viewing fields defined thereon, a plurality of dies defined by a scribe line formed in each viewing field, a plurality of mark patterns formed in the scribe line, and a plurality of anchor pattern respectively formed in the review fields, the anchor patterns being different from the mark patterns.

Abstract: A semiconductor structure includes a wafer comprising a plurality of viewing fields defined thereon, a plurality of dies defined by a scribe line formed in each viewing field, a plurality of mark patterns formed in the scribe line, and a plurality of anchor pattern respectively formed in the review fields, the anchor patterns being different from the mark patterns.

Abstract: A semiconductor structure includes a wafer comprising a plurality of viewing fields defined thereon, a plurality of dies defined by a scribe line formed in each viewing field, a plurality of mark patterns formed in the scribe line, and a plurality of anchor pattern respectively formed in the review fields, the anchor patterns being different from the mark patterns.

Abstract: A semiconductor structure includes a wafer comprising a plurality of viewing fields defined thereon, a plurality of dies defined by a scribe line formed in each viewing field, a plurality of mark patterns formed in the scribe line, and a plurality of anchor pattern respectively formed in the review fields, the anchor patterns being different from the mark patterns.

Abstract: A semiconductor structure includes a wafer comprising a plurality of viewing fields defined thereon, a plurality of dies defined by a scribe line formed in each viewing field, a plurality of mark patterns formed in the scribe line, and a plurality of anchor pattern respectively formed in the review fields, the anchor patterns being different from the mark patterns.

Abstract: A method for generating feedback signal in a device includes steps of receiving user input, and setting resolution of the device and media types of the television signals according to the user input; tuning a channel according to the user input to receive channel signals; decoding the channel signals; counting a period; detecting whether the device receives television signals; detecting whether an interrupt instruction is received if the device does not receive the television signals; generating a feedback signal according to the interrupt instruction if the interrupt instruction is received, and transmitting the feedback signal to a media server if the interrupt instruction is received.

Abstract: A method for generating feedback signal in a device includes steps of receiving user input; tuning a channel according to the user input; decoding channel signals; counting a period; detecting whether the device receives television signals; detecting whether an interrupt instruction is received if the device does not receive the television signals; generating a feedback signal according to the interrupt instruction, and transmitting the feedback signal to a media server if the interrupt instruction is received.

Abstract: A capture ring is provided. The capture ring has a top surface and a bottom surface. A support surface is located at the inner periphery of the capture ring parallel to the top surface for supporting a wafer. An inside diameter lead angle is located between the top surface and the support surface. There is an included angle between the inside diameter lead angle and a normal line of the support surface, wherein the included angle is more than 30 degrees but less than or equal to 90 degrees. Because the foregoing included angle is more than 30 degrees but less than or equal to 90 degrees, the refraction and reflecting area of plasma inside an etching machine will be increased. Therefore, the wafer bevel flake type defect size can be controlled and the wafer bevel defect count can be reduced.

Abstract: A wafer cleaning apparatus is provided. The wafer cleaning apparatus comprises a trough, a wafer holder, a rolling device, and a fluid injecting device. The wafer holder is disposed in the trough for holding a plurality of wafers. The rolling device is disposed in the rough and contacts with the wafers held on the wafer holder for rotating the wafers. The wafer injecting device is disposed in the trough for supplying cleaning liquid for cleaning the wafers.